公开(公告)号：US20220140038A1

公开(公告)日：2022-05-05

申请号：US17572913

申请日：2022-01-11

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Woo BAE ,  So Young KOO ,  Han Bit KIM ,  Thanh Tien NGUYEN ,  Kyoung Won LEE ,  Yong Su LEE ,  Jae Seob LEE ,  Gyoo Chul JO

IPC: H01L27/32 ,  H01L51/52 ,  H01L29/786 ,  H01L27/12

Abstract: An organic light emitting diode display according to an exemplary embodiment includes: a substrate; a first buffer layer on the substrate; a first semiconductor layer on the first buffer layer; a first gate insulating layer on the first semiconductor layer; a first gate electrode and a blocking layer on the first gate insulating layer; a second buffer layer on the first gate electrode; a second semiconductor layer on the second buffer layer; a second gate insulating layer on the second semiconductor layer; and a second gate electrode on the second gate insulating layer.

公开(公告)号：US20210167153A1

公开(公告)日：2021-06-03

申请号：US17151883

申请日：2021-01-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myoung Geun CHA ,  Sang Gun CHOI ,  Sang Sub KIM ,  Ji Yeong SHIN ,  Yong Su LEE ,  Ki Seok CHOI

IPC: H01L27/32

Abstract: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.

公开(公告)号：US20210074785A1

公开(公告)日：2021-03-11

申请号：US16871523

申请日：2020-05-11

Applicant: Samsung Display Co., Ltd.

Inventor： Doo Na KIM ,  Keun Woo KIM ,  Tae Wook KANG ,  Do Kyeong LEE ,  Yong Su LEE ,  Jae Hwan CHU ,  Kwang Hyun KIM ,  Yeoung Keol WOO ,  Yung Bin CHUNG

IPC: H01L27/32

Abstract: A display device includes: a first semiconductor layer on a first buffer layer, and including a first active layer; a first gate insulating layer on the first semiconductor layer, and covering the first active layer; a first conductive layer on the first gate insulating layer, and including a first gate electrode; a second conductive layer on the first conductive layer, and including a first source/drain electrode; a first interlayer insulating layer on the first conductive layer; a second semiconductor layer on the first interlayer insulating layer, and including a second active layer; a second gate insulating layer on the second semiconductor layer, and covering the second active layer; and a third conductive layer on the second gate insulating layer, and including a second gate electrode and a second source/drain electrode. The first gate insulating layer and the second gate insulating layer include different insulating materials from each other.

公开(公告)号：US20210049958A1

公开(公告)日：2021-02-18

申请号：US16852848

申请日：2020-04-20

Applicant: Samsung Display Co., Ltd.

Inventor： Keun Woo KIM ,  Mee Jae KANG ,  Hye Na KWAK ,  Han Bit KIM ,  Thanh Tien NGUYEN ,  Yong Su LEE ,  Jae Seob LEE

IPC: G09G3/325 ,  G09G3/3283 ,  G09G3/3266

Abstract: A display device includes: a pixel including: a light emitting element connected between a first power source and a second power source; a first transistor connected between the first power source and the light emitting element to control a driving current, and including a first gate electrode connected to a first node and a second gate electrode connected to a bias control line; and a switching transistor connected between a data line and the first node, and including a gate electrode connected to a scan line; and a driving circuit to drive the pixel according to a driving frequency. The driving circuit drives the pixel in a first mode when the driving frequency is in a first range, and sequentially supplies a control signal having a first voltage and a second voltage to the bias control line during a light emission period of the pixel in the first mode.

公开(公告)号：US20210036079A1

公开(公告)日：2021-02-04

申请号：US16838931

申请日：2020-04-02

Applicant: Samsung Display Co., Ltd.

Inventor： Keun Woo KIM ,  Yong Su LEE ,  Myoung Geun CHA ,  Doo Na KIM ,  Sang Sub KIM ,  Jae Hwan CHU ,  Sang Gun CHOI

IPC: H01L27/32

Abstract: A display device includes: a pixel at a display region. The pixel includes: a light-emitting element connected between a first power source and a second power source; and a first transistor connected between the first power source and the light-emitting element, the first transistor to control a driving current of the light-emitting element in response to a voltage of a first node. The first transistor includes a first driving transistor and a second driving transistor that are connected in series with each other between the first power source and the light-emitting element, and the first driving transistor and the second driving transistor have structures that are asymmetric with each other in a cross-sectional view.

公开(公告)号：US20190341440A1

公开(公告)日：2019-11-07

申请号：US16382634

申请日：2019-04-12

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myounggeun CHA ,  Sanggun CHOI ,  Jiyeong SHIN ,  Yong Su LEE

IPC: H01L27/32 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3291 ,  H01L33/06 ,  H01L33/50 ,  H01L27/15

Abstract: A display device including: a substrate; a light emitting element on the substrate; a pixel circuit between the substrate and the light emitting element, wherein the pixel circuit is electrically connected to the light emitting element, and includes a plurality of transistors; and a conductive pattern including an electrode portion and a wiring portion for supplying a voltage to the electrode portion, wherein the electrode portion overlaps an active pattern of at least one transistor among the plurality of transistors, wherein the conductive pattern is disposed between the substrate and the active pattern, and wherein a thickness of the wiring portion is greater than a thickness of the electrode portion.

公开(公告)号：US20190340978A1

公开(公告)日：2019-11-07

申请号：US16381491

申请日：2019-04-11

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myounggeun CHA ,  Sanggun CHOI ,  Jiyeong SHIN ,  Yong Su LEE

IPC: G09G3/3233

Abstract: A pixel unit of a display device including: an OLED; a first transistor including a first electrode connected to a first node, a second electrode connected to a second node, and a third electrode connected to a third node; a capacitor including a first electrode receiving a power voltage and a second electrode connected to the first node; a second transistor including a first electrode receiving a scan signal, a second electrode receiving a data voltage and a third electrode connected to the second node; a third transistor including a first electrode receiving the scan signal, a second electrode connected to the first node and a third electrode connected to the third node, wherein at least one of the first and third transistors includes a fourth electrode, the fourth electrode receives a compensation voltage when an operation temperature is above a preset temperature and is floated when the operation temperature is equal to or more than the preset temperature.

公开(公告)号：US20190115412A1

公开(公告)日：2019-04-18

申请号：US15965160

申请日：2018-04-27

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun CHA ,  Sang Gun CHOI ,  Thanh Tien NGUYEN ,  Kyoung Won LEE ,  Yong Su LEE ,  Joo Hye JUNG

IPC: H01L27/32 ,  G09G3/3258

CPC classification number: H01L27/3276 ,  G09G3/3233 ,  G09G3/3258 ,  G09G2300/0852 ,  G09G2310/0251 ,  G09G2310/0262 ,  H01L27/3262 ,  H01L27/3265

Abstract: A display device includes first semiconductor pattern including a first channel portion, a first electrode connected to a driving voltage line, and a second electrode connected to a light emitting element, a first insulating, a first conductive layer including a first gate electrode, a second insulating layer, a second conductive layer including an initialization power line, a third insulating layer, an upper semiconductor layer including a second semiconductor pattern including a second channel portion, a third electrode, and a fourth electrode connected to the first gate electrode, and a third semiconductor pattern including a third channel portion, a fifth electrode connected to the third electrode, and a sixth electrode connected to the second electrode, a fourth insulating layer, and a third conductive layer including a scan line and a control signal line, wherein the upper semiconductor layer does not overlap the first gate electrode and the initialization power line.

公开(公告)号：US20190096925A1

公开(公告)日：2019-03-28

申请号：US16036985

申请日：2018-07-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jong Chan LEE ,  Woong Hee JEONG ,  Tae Hoon YANG ,  Yong Su LEE

IPC: H01L27/12

Abstract: A display device includes a substrate, a buffer layer on the substrate, a first semiconductor layer of a first transistor on the buffer layer, a first insulating layer disposed on the first semiconductor layer, a first gate electrode of the first transistor on the first insulating layer, a second insulating layer on the first gate electrode, and a second semiconductor layer of a second transistor disposed on the second insulating layer. A difference between a first distance between a lower side of the buffer layer and an upper side of the second insulating layer and a second distance between an upper side of the first semiconductor layer and an upper side of the second insulating layer is 420 to 520 angstroms.

公开(公告)号：US20180114866A1

公开(公告)日：2018-04-26

申请号：US15729120

申请日：2017-10-10

Applicant: Samsung Display Co., Ltd.

Inventor： Jong Chan LEE ,  Kyoung Won LEE ,  Woong Hee JEONG ,  Yong Su LEE

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/266 ,  H01L21/265 ,  H01L21/225 ,  H01L29/423

Abstract: A display device includes: a flexible substrate; a semiconductor layer on the flexible substrate; a passivation layer on the semiconductor layer; an alignment member layer on the passivation, the alignment member layer including a first alignment member and a second alignment member in a same layer; a first insulation layer on the alignment member layer and the passivation layer; a gate electrode on the first insulation layer; a second insulation layer on the first insulation layer and the gate electrode; and a source electrode and a drain electrode on the second insulation layer and spaced apart from each other, wherein the first alignment member and the second alignment member are spaced apart from each other with the gate electrode therebetween.