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    Organic light emitting diode display
    31.
    发明授权
    Organic light emitting diode display 有权

    公开(公告)号：US11264591B2

    公开(公告)日：2022-03-01

    申请号：US16417386

    申请日：2019-05-20

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Dong Chan Kim ,  Won Jong Kim ,  Eung Do Kim ,  Ji Hye Lee ,  Da Hea Im ,  Sang Hoon Yim ,  Yoon Hyeung Cho ,  Won Suk Han

    IPC: H01L27/32 ,  H01L51/52

    Abstract: A light emitting diode display includes: a substrate; a light emitting element on the substrate; and a capping layer on the organic light emitting element and including a plurality of refractive layers each including a low refraction layer and a high refraction layer, wherein the high refraction layer includes a first inorganic material having a refractive index which is equal to or greater than about 1.7 and equal to or less than about 6.0, wherein the low refraction layer includes a second inorganic material having a refractive index which is equal to or greater than about 1.0 and equal to or less than about 1.7, and wherein the second inorganic material comprises at least one selected from LiF, AlF3, NaF, KF, RbF, CaF2, SrF2, and YbF2.

    Organic light emitting diode display
    32.
    发明授权
    Organic light emitting diode display 有权

    公开(公告)号：US11177461B2

    公开(公告)日：2021-11-16

    申请号：US16427978

    申请日：2019-05-31

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Won Jong Kim ,  Dong Chan Kim ,  Eung Do Kim ,  Dong Kyu Seo ,  Da Hea Im ,  Sang Hoon Yim ,  Yoon Hyeung Cho ,  Won Suk Han

    IPC: H01L51/52 ,  H01L51/00 ,  H01L51/50 ,  H01L27/32

    Abstract: An organic light emitting diode display including: a substrate; an organic light emitting diode on the substrate; a capping layer on the organic light emitting diode and including a high refractive layer including an inorganic material having a refractive index that is equal to or greater than about 1.7 and equal to or less than about 6.0; and a thin film encapsulation layer covering the capping layer and the organic light emitting diode, the inorganic material including at least one selected from the group consisting of CuI, thallium iodide (TlI), BaS, Cu2O, CuO, BiI, WO3, TiO2, AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MoO3, Ag2O, CdO, CoO, Pr2O3, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.

    Organic light emitting diode
    33.
    发明授权
    Organic light emitting diode 有权

    公开(公告)号：US11145843B2

    公开(公告)日：2021-10-12

    申请号：US16737825

    申请日：2020-01-08

    Applicant: Samsung Display Co., Ltd.

    Inventor： Myeong Suk Kim ,  Sung Wook Kim ,  Chang Woong Chu ,  Jin Soo Hwang ,  Sang Hoon Yim

    IPC: H01L27/32 ,  H01L51/52 ,  H01L51/50

    Abstract: The described technology relates to an organic light emitting diode including: a first electrode; a second electrode overlapping the first electrode; an organic emission layer between the first electrode and the second electrode; and a capping layer on the second electrode, wherein the capping layer has an absorption rate of 0.25 or more for light having a wavelength of 405 nm, thereby preventing degradation of the organic emission layer by blocking the light of the harmful wavelength region and providing the organic light emitting diode in which a blue emission efficiency is not deteriorated.

    Organic light emitting diode
    34.
    发明授权
    Organic light emitting diode 有权

    公开(公告)号：US10749129B2

    公开(公告)日：2020-08-18

    申请号：US15352513

    申请日：2016-11-15

    Applicant: Samsung Display Co., Ltd.

    Inventor： Dong Chan Kim ,  Won Jong Kim ,  Dong Kyu Seo ,  Ji Hye Lee ,  Sang Hoon Yim ,  Won Suk Han

    IPC: H01L51/50

    Abstract: According to an embodiment of the present disclosure, an organic light emitting diode includes: a first electrode; a second electrode overlapping the first electrode; an emission layer positioned between the first electrode and the second electrode; an electron injection layer positioned between the emission layer and the second electrode; and an electron injection delay layer positioned between the emission layer and the electron injection layer, wherein the electron injection layer includes a first material made of a metal and a second material made of a metal halide, and the electron injection delay layer has a thickness of about 20 Å to about 140 Å.

    ORGANIC LIGHT EMITTING DIODE DISPLAY
    39.
    发明申请
    ORGANIC LIGHT EMITTING DIODE DISPLAY 审中-公开
    有机发光二极管显示

    公开(公告)号：US20160329521A1

    公开(公告)日：2016-11-10

    申请号：US14985285

    申请日：2015-12-30

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Dong Chan Kim ,  Won Jong Kim ,  Eung Do Kim ,  Ji Hye Lee ,  Da Hea Im ,  Sang Hoon Yim ,  Yoon Hyeung Cho ,  Won Suk Han

    IPC: H01L51/52 ,  H01L27/32

    CPC classification number: H01L51/5253 ,  H01L27/3244 ,  H01L51/5275

    Abstract: An organic light emitting diode display includes: a substrate; an organic light emitting element on the substrate; and a capping layer on the organic light emitting element and including a high refraction layer formed of an inorganic material having a refractive index which is equal to or greater than about 1.7 and equal to or less than about 6.0, wherein the inorganic material includes at least one selected from CuI, thallium iodide (TlI), AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MnI2, FeI2, CoI2, NiI2, aluminium iodide (AlI3), thorium(IV) iodide (ThI4), uranium triiodide (UI3), MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, CuO, Cu2O, WO3, MoO3, SnO2, Nb2O5, Ag2O, CdO, CoO, Pr2O3, Bi2O3, Fe2O3, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.

    Abstract translation: 有机发光二极管显示器包括：基板; 基板上的有机发光元件; 和有机发光元件上的覆盖层，并且包括由折射率等于或大于约1.7且等于或小于约6.0的无机材料形成的高折射层，其中所述无机材料至少包括 选自CuI，碘化铊（TlI），AgI，CdI2，HgI2，SnI2，PbI2，BiI3，ZnI2，MnI2，FeI2，CoI2，NiI2，碘化铝（AlI3），碘化钍（IV）（Th14），三碘化铀 （ⅲ），MgS，MgSe，MgTe，CaS，CaSe，CaTe，SrS，SrSe，SrTe，BaS，BaSe，BaTe，SnS，PbS，CdS，CaS，ZnS，ZnTe，PbTe，CdTe，SnSe，PbSe，CdSe， CuO，Cu2O，WO3，MoO3，SnO2，Nb2O5，Ag2O，CdO，CoO，Pr2O3，Bi2O3，Fe2O3，AlAs，GaAs，InAs，GaP，InP，AlP，AlSb，GaSb和InSb。

    ORGANIC LIGHT EMITTING DIODE
    40.
    发明公开
    ORGANIC LIGHT EMITTING DIODE 审中-公开

    公开(公告)号：US20230389350A1

    公开(公告)日：2023-11-30

    申请号：US18448840

    申请日：2023-08-11

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Dong Chan Kim ,  Won Jong Kim ,  Dong Kyu Seo ,  Ji Hye Lee ,  Sang Hoon Yim ,  Won Suk Han

    IPC: H10K50/17 ,  H10K50/13 ,  H10K50/16

    CPC classification number: H10K50/171 ,  H10K50/00 ,  H10K50/166 ,  H10K50/13

    Abstract: According to an embodiment of the present disclosure, an organic light emitting diode includes: a first electrode; a second electrode overlapping the first electrode; an emission layer positioned between the first electrode and the second electrode; an electron injection layer positioned between the emission layer and the second electrode; and an electron injection delay layer positioned between the emission layer and the electron injection layer, wherein the electron injection layer includes a first material made of a metal and a second material made of a metal halide, and the electron injection delay layer has a thickness of about 20 Å to about 140 Å.

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