Pixel of an organic light emitting diode display device and organic light emitting diode display device

    公开(公告)号:US10255855B2

    公开(公告)日:2019-04-09

    申请号:US15158515

    申请日:2016-05-18

    Abstract: A pixel of an organic light emitting diode display device includes a scan transistor configured to connect a data line to a first node in response to a scan signal, a storage capacitor connected between the first node and a first power supply voltage, a compensation capacitor connected between the first node and a second node, a driving transistor having a gate connected to the second node, a source connected to the first power supply voltage, and a drain connected to a third node, a compensation transistor configured to connect the second node to the third node in response to a compensation control signal, an organic light emitting diode connected between the third node and a second power supply voltage, and an initialization transistor configured to transfer an initialization voltage in response to an initialization control signal.

    Display panel and organic light-emitting diode (OLED) display including the same

    公开(公告)号:US10043444B2

    公开(公告)日:2018-08-07

    申请号:US14594919

    申请日:2015-01-12

    Abstract: A display panel and organic light-emitting diode (OLED) display including the same are disclosed. In one aspect, the display panel includes an active pixel including a driving circuit configured to generate a driving current based on a data signal and an emission circuit configured to emit light based on the driving current. The display panel also includes a repair pixel including a repair driving circuit configured to provide a repair driving current to the emission circuit instead of the driving current of the driving circuit when the driving circuit is disconnected from the emission circuit. The repair pixel further includes an aging switch configured to apply an aging voltage to the repair driving circuit during an aging operation and electrically disconnect the repair driving circuit from a power supply after the aging operation is performed.

    Display device
    36.
    发明授权
    Display device 有权
    显示设备

    公开(公告)号:US09214509B2

    公开(公告)日:2015-12-15

    申请号:US14278052

    申请日:2014-05-15

    CPC classification number: H01L27/3279 H01L27/3276 H01L27/3288 H01L27/3297

    Abstract: A display device includes a pixel unit including a plurality of pixels coupled to a plurality of control lines and to a plurality of power lines to commonly receive same control signals and power source, a plurality of inlet pads positioned outside the pixel unit, the plurality of inlet pads being configured to apply the power source to the plurality of power lines, a pad bar electrically coupling the plurality of inlet pads, and a plurality of coupling patterns contacting end portions of the plurality of power lines and corresponding end portions of the pad bar, the plurality of coupling patterns electrically connecting the plurality of power lines and the pad bar, and one or more of the end portions of the pad bar and the ends portions of the plurality of power lines have different contact areas with the plurality of coupling patterns.

    Abstract translation: 显示装置包括:像素单元,包括耦合到多个控制线的多个像素,以及多个电源线,以共同接收相同的控制信号和电源;位于像素单元外的多个入口板, 入口衬垫被配置为将电源施加到多个电源线,电连接多个入口衬垫的焊盘和接触多个电源线的端部的多个耦合图案以及焊盘的相应端部 电连接多个电源线和焊盘的多个耦合图案以及多个电源线的焊盘和端部的一个或多个端部具有与多个耦合模式不同的接触区域 。

    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    37.
    发明申请
    THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
    薄膜晶体管及其制造方法

    公开(公告)号:US20140124755A1

    公开(公告)日:2014-05-08

    申请号:US13954810

    申请日:2013-07-30

    CPC classification number: H01L29/78678 H01L51/0003 H01L51/0516 H01L51/0558

    Abstract: A thin film transistor and method of manufacturing the same are disclosed. In one aspect, the thin film transistor includes a gate electrode positioned on a substrate It also includes a gate insulating layer positioned on the gate electrode and a semiconductor positioned on the gate insulating layer. It further includes a source electrode and a drain electrode positioned on the semiconductor, in which the semiconductor has a step at a boundary surface that is in contact with the gate insulating layer.

    Abstract translation: 公开了一种薄膜晶体管及其制造方法。 在一个方面,薄膜晶体管包括位于衬底上的栅电极。还包括位于栅电极上的栅极绝缘层和位于栅极绝缘层上的半导体。 它还包括位于半导体上的源电极和漏电极,其中半导体在与栅极绝缘层接触的边界表面具有台阶。

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