公开(公告)号：US11575100B2

公开(公告)日：2023-02-07

申请号：US17082459

申请日：2020-10-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaybum Kim ,  Eoksu Kim ,  Kyoungseok Son ,  Junhyung Lim ,  Jihun Lim

IPC: H01L51/52 ,  H01L51/00 ,  H01L27/11 ,  G09G3/32 ,  G09G3/3233 ,  H01L27/32

Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

公开(公告)号：US11430847B2

公开(公告)日：2022-08-30

申请号：US16820102

申请日：2020-03-16

Applicant: SAMSUNG DISPLAY CO., LTD

Inventor： Kyoungseok Son ,  Jaybum Kim ,  Eoksu Kim ,  Junhyung Lim ,  Jihun Lim

IPC: H01L27/32 ,  H01L21/02 ,  H01L21/4757 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L49/02 ,  H01L29/24

Abstract: A method of manufacturing a semiconductor device. A pre first semiconductor pattern having a crystalline semiconductor material is formed on a base substrate. A pre first insulation layer is formed on the pre first semiconductor pattern. A first semiconductor pattern is formed by defining a channel region in the pre first semiconductor pattern. A pre protection layer is formed on the pre first insulation layer. A pre second semiconductor pattern including an oxide semiconductor material is formed on the pre protection layer. A pre second insulation layer is formed on the pre second semiconductor pattern. The pre second insulation layer is patterned using an etching gas such that at least a portion of the pre second semiconductor pattern is exposed. A second semiconductor pattern is formed by defining a channel region in the pre second semiconductor pattern. The pre protection layer has a material with a first etch selectivity that is different from a second etch selectivity of the second insulation layer with respect to the etching gas.

公开(公告)号：US11289588B2

公开(公告)日：2022-03-29

申请号：US16824339

申请日：2020-03-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaybum Kim ,  Seryeong Kim ,  Junhyung Lim ,  Taesang Kim

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/32 ,  H01L27/146 ,  H01L29/04 ,  H01L27/12

Abstract: A semiconductor device includes a base substrate. A first thin-film transistor is disposed on the base substrate. The first thin-film transistor includes a first input electrode, a first output electrode, a first semiconductor pattern disposed below a first insulating layer, and a first control electrode disposed on the first insulating layer and below a second insulating layer. A second thin-film transistor includes a second input electrode, a second output electrode, a second semiconductor pattern disposed on the second insulating layer, and a second control electrode disposed on an insulating pattern formed on the second semiconductor pattern and exposes a portion of the second semiconductor pattern. The first semiconductor pattern includes a crystalline semiconductor. The second semiconductor pattern includes an oxide semiconductor. The first semiconductor pattern, the first control electrode, the second semiconductor pattern, and the second control electrode are overlapped.

公开(公告)号：US20210336061A1

公开(公告)日：2021-10-28

申请号：US17370590

申请日：2021-07-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoungseok Son ,  Eoksu Kim ,  Jaybum Kim ,  Junhyung Lim ,  Jihun Lim

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/32 ,  H01L23/485 ,  H01L51/00

Abstract: A display apparatus includes: a substrate on which a first area, a second area spaced apart from the first area, and a bending area between a first area and a second area and bent along a bending axis are defined; a first thin-film transistor (“TFT”) and a second TFT; and a first conductive layer and a second conductive layer. The first TFT includes: a first active layer including polycrystalline silicon; a first gate electrode; and a first electrode disposed at a level which is the same as a level of the first conductive layer, and the second TFT includes: a second active layer including an oxide semiconductor; a second gate electrode; and a second electrode disposed at a level which is the same as a level of the second conductive layer.

公开(公告)号：US11088284B2

公开(公告)日：2021-08-10

申请号：US15871468

申请日：2018-01-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoungseok Son ,  Eoksu Kim ,  Jaybum Kim ,  Junhyung Lim ,  Jihun Lim

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/32 ,  H01L23/485 ,  H01L51/00 ,  H01L27/06

Abstract: A display apparatus includes: a substrate on which a first area, a second area spaced apart from the first area, and a bending area between a first area and a second area and bent along a bending axis are defined; a first thin-film transistor (“TFT”) and a second TFT; and a first conductive layer and a second conductive layer. The first TFT includes: a first active layer including polycrystalline silicon; a first gate electrode; and a first electrode disposed at a level which is the same as a level of the first conductive layer, and the second TFT includes: a second active layer including an oxide semiconductor; a second gate electrode; and a second electrode disposed at a level which is the same as a level of the second conductive layer.

公开(公告)号：US20180233575A1

公开(公告)日：2018-08-16

申请号：US15730475

申请日：2017-10-11

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaybum Kim ,  Seryeong Kim ,  Junhyung Lim ,  Taesang Kim

IPC: H01L29/66 ,  H01L27/32 ,  H01L27/146 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L29/6675 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/14692 ,  H01L27/3225 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/7869

Abstract: A semiconductor device includes a base substrate. A first thin-film transistor is disposed on the base substrate. The first thin-film transistor includes a first input electrode, a first output electrode, a first semiconductor pattern disposed below a first insulating layer, and a first control electrode disposed on the first insulating layer and below a second insulating layer. A second thin-film transistor includes a second input electrode, a second output electrode, a second semiconductor pattern disposed on the second insulating layer, and a second control electrode disposed on an insulating pattern formed on the second semiconductor pattern and exposes a portion of the second semiconductor pattern. The first semiconductor pattern includes a crystalline semiconductor. The second semiconductor pattern incudes an oxide semiconductor. The first semiconductor pattern, the first control electrode, the second semiconductor pattern, and the second control electrode are overlapped.