SOLID-STATE IMAGING DEVICE
    32.
    发明申请
    SOLID-STATE IMAGING DEVICE 有权
    固态成像装置

    公开(公告)号:US20150109503A1

    公开(公告)日:2015-04-23

    申请号:US14579592

    申请日:2014-12-22

    Abstract: A solid-state imaging device according to the present disclosure includes pixels arranged two-dimensionally, each of the pixels including: a metal electrode; a photoelectric conversion layer that is on the metal electrode and converts light into an electrical signal; a transparent electrode on the photoelectric conversion layer; an electric charge accumulation region that is electrically connected to the metal electrode and accumulates electric charges from the photoelectric conversion layer; an amplifier transistor that applies a signal voltage according to an amount of the electric charges in the electric charge accumulation region; and a reset transistor that resets electrical potential of the electric charge accumulation region, in which the reset transistor includes a gate oxide film thicker than a gate oxide film of the amplifier transistor.

    Abstract translation: 根据本公开的固态成像装置包括二维布置的像素,每个像素包括:金属电极; 在所述金属电极上并将光转换为电信号的光电转换层; 光电转换层上的透明电极; 电荷蓄积区域,其电连接到所述金属电极并积聚来自所述光电转换层的电荷; 放大器晶体管,其根据电荷积累区域中的电荷量施加信号电压; 以及复位晶体管,其复位电荷累积区域的电位,其中复位晶体管包括比放大器晶体管的栅极氧化物膜厚的栅极氧化膜。

Patent Agency Ranking