-
公开(公告)号:US20170170226A1
公开(公告)日:2017-06-15
申请号:US15441568
申请日:2017-02-24
Inventor: Mitsuyoshi MORI , Ryohei MIYAGAWA , Yoshiyuki OHMORI , Yoshihiro SATO , Yutaka HIROSE , Yusuke SAKATA , Toru OKINO
IPC: H01L27/146
CPC classification number: H01L27/14636 , H01L27/1461 , H01L27/14612 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/307
Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.
-
公开(公告)号:US20150109503A1
公开(公告)日:2015-04-23
申请号:US14579592
申请日:2014-12-22
Inventor: Mitsuyoshi MORI , Hirohisa OHTSUKI , Yoshiyuki OHMORI , Yoshihiro SATO , Ryohei MIYAGAWA
IPC: H04N5/378
CPC classification number: H04N5/378 , H01L27/14603 , H01L27/1461 , H01L27/1464 , H01L27/14645 , H04N5/3745
Abstract: A solid-state imaging device according to the present disclosure includes pixels arranged two-dimensionally, each of the pixels including: a metal electrode; a photoelectric conversion layer that is on the metal electrode and converts light into an electrical signal; a transparent electrode on the photoelectric conversion layer; an electric charge accumulation region that is electrically connected to the metal electrode and accumulates electric charges from the photoelectric conversion layer; an amplifier transistor that applies a signal voltage according to an amount of the electric charges in the electric charge accumulation region; and a reset transistor that resets electrical potential of the electric charge accumulation region, in which the reset transistor includes a gate oxide film thicker than a gate oxide film of the amplifier transistor.
Abstract translation: 根据本公开的固态成像装置包括二维布置的像素,每个像素包括:金属电极; 在所述金属电极上并将光转换为电信号的光电转换层; 光电转换层上的透明电极; 电荷蓄积区域,其电连接到所述金属电极并积聚来自所述光电转换层的电荷; 放大器晶体管,其根据电荷积累区域中的电荷量施加信号电压; 以及复位晶体管,其复位电荷累积区域的电位,其中复位晶体管包括比放大器晶体管的栅极氧化物膜厚的栅极氧化膜。
-