公开(公告)号：US20190035842A1

公开(公告)日：2019-01-31

申请号：US16038896

申请日：2018-07-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： JUNJI HIRASE ,  YOSHINORI TAKAMI ,  SHOTA YAMADA ,  YOSHIHIRO SATO ,  YOSHIAKI SATOU

IPC: H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14806 ,  H04N5/3575 ,  H04N5/363 ,  H04N5/3745 ,  H04N5/378

Abstract: An imaging device includes a semiconductor substrate having a surface, the semiconductor substrate including: a first layer of a first conductivity type; a second layer of a second conductivity type, the second layer being closer to the surface; and a pixel including: a photoelectric converter configured to convert light into charge; a first diffusion region of the first conductivity type, the first diffusion region facing the first layer via the second layer, configured to store at least a part of the charge; and a second diffusion region being a diffusion region closest to the first diffusion region among diffusion regions of the first conductivity type, the diffusion regions facing the first layer via the second layer. A distance between the second diffusion region and the first layer is equal to or less than 1.5 times a distance between the second diffusion region and the first diffusion region.

公开(公告)号：US20190027524A1

公开(公告)日：2019-01-24

申请号：US16033723

申请日：2018-07-12

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIHIRO SATO ,  JUNJI HIRASE ,  YOSHINORI TAKAMI

IPC: H01L27/146 ,  H01L27/30

CPC classification number: H01L27/14612 ,  H01L27/14603 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14665 ,  H01L27/307 ,  H04N5/378

Abstract: An imaging device includes: a pixel that includes a semiconductor substrate including a first diffusion region containing a first impurity of a first conductivity type, and a second diffusion region containing a second impurity of the first conductivity type, a concentration of the first impurity in the first diffusion region being less than a concentration of the second impurity in the second diffusion region, an area of the first diffusion region being less than an area of the second diffusion region in a plan view, a photoelectric converter configured to convert light into charges, and a first transistor including a source and a drain, the first diffusion region functioning as one of the source and the drain, the second diffusion region functioning as the other of the source and the drain, the first diffusion region being configured to store at least a part of the charges.

公开(公告)号：US20160191825A1

公开(公告)日：2016-06-30

申请号：US14955086

申请日：2015-12-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIHIRO SATO ,  JUNJI HIRASE

IPC: H04N5/363 ,  H04N5/378

CPC classification number: H04N5/363 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14665 ,  H04N5/361 ,  H04N5/374 ,  H04N5/378

Abstract: An imaging device of the present disclosure includes: a unit pixel cell comprising a photoelectric converter converting incident light into signal charge, a semiconductor substrate, a charge storage region located in the semiconductor substrate and storing the signal charge, and a signal detection circuit detecting the signal charge; a feedback circuit negatively feeding back output of the signal detection circuit and comprising a signal line; and at least one wiring layer located between the semiconductor substrate and the photoelectric converter. The at least one wiring layer includes a portion of the signal line, the portion overlapping the unit pixel cell in a plan view. In the plan view, the portion is located on an opposite side from the charge storage region across a center line of the unit pixel cell, the center line being in parallel with a direction in which the signal line extends.

Abstract translation: 本公开的成像装置包括：单位像素单元，包括将入射光转换为信号电荷的光电转换器，半导体衬底，位于半导体衬底中的电荷存储区域并存储信号电荷;以及信号检测电路， 信号充电 反馈电路负反馈信号检测电路的输出并包括信号线; 以及位于半导体衬底和光电转换器之间的至少一个布线层。 所述至少一个布线层包括所述信号线的一部分，所述部分在平面图中与所述单位像素单元重叠。 在平面图中，该部分位于与单位像素单元的中心线的电荷存储区域相反的一侧，该中心线与信号线延伸的方向平行。

公开(公告)号：US20160190188A1

公开(公告)日：2016-06-30

申请号：US14972153

申请日：2015-12-17

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MASASHI MURAKAMI ,  KAZUKO NISHIMURA ,  YUTAKA ABE ,  YOSHIYUKI MATSUNAGA ,  YOSHIHIRO SATO ,  JUNJI HIRASE

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14665 ,  H01L51/42

Abstract: An imaging device includes: a unit pixel cell comprising: a photoelectric converter generating an electric signal and comprising a first and second electrodes and a photoelectric conversion film located therebetween, the first electrode being located on a light receiving side of the photoelectric conversion film, a signal detection circuit detecting the electric signal and comprising a first transistor and a second transistor that are connected to the second electrode, the first transistor amplifying the electric signal, and a capacitor circuit comprising a first capacitor and a second capacitor having a capacitance value larger than that of the first capacitor that are serially connected to each other, the capacitor circuit being provided between the second electrode and a reference voltage; and a feedback circuit comprising the first transistor and an inverting amplifier and negatively feeding back the electric signal to the second transistor via the first transistor and the inverting amplifier.

Abstract translation: 一种成像装置，包括：单位像素单元，包括：光电转换器，其生成电信号，并且包括位于其间的第一和第二电极和光电转换膜，所述第一电极位于所述光电转换膜的光接收侧， 信号检测电路检测电信号，并包括连接到第二电极的第一晶体管和第二晶体管，放大电信号的第一晶体管，以及电容电路，包括第一电容器和电容值大于的电容值的第二电容器 所述第一电容器彼此串联连接，所述电容器电路设置在所述第二电极和参考电压之间; 以及包括第一晶体管和反相放大器的反馈电路，并且经由第一晶体管和反相放大器将电信号负反馈给第二晶体管。