公开(公告)号：US07534705B2

公开(公告)日：2009-05-19

申请号：US11978585

申请日：2007-10-30

Applicant: Akihisa Shimomura ,  Osamu Nakamura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Atsuo Isobe ,  Tamae Takano ,  Kouki Inoue

Inventor： Akihisa Shimomura ,  Osamu Nakamura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Atsuo Isobe ,  Tamae Takano ,  Kouki Inoue

IPC: H01L21/425

CPC classification number: H01L21/02683 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78675

Abstract: An impurity of one conductivity type is ionized and accelerated by electric field before being implanted into a semiconductor layer to form a high concentration impurity region near its surface. Then the semiconductor layer is irradiated with continuous wave laser light for melting and crystallization or recrystallization, through which a region where the concentration of the impurity is constant is formed in the semiconductor layer. The continuous wave laser light irradiation may bring the semiconductor layer to the crystalline phase from the amorphous phase as long as the impurity element is re-distributed. The impurity is segregated through this process to newly create a high concentration region. However, this region is removed and no problem arises.

Abstract translation: 一种导电类型的杂质在被注入半导体层之前被电场电离和加速，以在其表面附近形成高浓度杂质区。 然后用连续波激光照射半导体层进行熔融和结晶或再结晶，半导体层中形成杂质浓度恒定的区域。 只要杂质元素被重新分布，连续波激光照射可以使半导体层从非晶相进入结晶相。 通过该过程将杂质分离，以产生新的高浓度区域。 然而，该区域被移除并且没有问题出现。

公开(公告)号：US20090084409A1

公开(公告)日：2009-04-02

申请号：US11792994

申请日：2005-12-14

Applicant: Ryoichi Okura ,  Tatsuro Yoshida ,  Yoshishige Takikawa ,  Osamu Nakamura

Inventor： Ryoichi Okura ,  Tatsuro Yoshida ,  Yoshishige Takikawa ,  Osamu Nakamura

IPC: H01L21/3105 ,  H01L21/677 ,  B08B3/04

CPC classification number: G11B5/8404 ,  B08B3/02 ,  B08B15/02 ,  G02F1/1303 ,  G02F2001/1316 ,  H01L21/67051 ,  H01L21/67253

Abstract: [Object] It is an object of the invention to provide a cleaning apparatus for cleaning a precision substrate capable of preventing a contamination factor from adhering again, to prevent a natural oxide film from being formed, and to prevent a water mark.[Solving Means] In a cleaning apparatus 1, a substrate-to-be-cleaned 2 is disposed in a container 3, and an atmosphere component measuring device 4 which measures an atmosphere in the container 3, gas supply means 5 for controlling an atmosphere, and gas discharge means 6 and 7 are disposed in the cleaning apparatus 1, the cleaning apparatus 1 includes at least one the gas supply means 5 which equally supplies gas from a portion opposed to a surface-to-be-cleaned, gas supply means 21 for supplying gas to a rotating/holding mechanism comprising a cylindrical stationary shaft 16, a fluid bearing 17 and a rotation support member 18, gas discharge means 7 for discharging gas into a drainage mechanism, and gas supply means 31 for supplying gas for controlling an atmosphere when cleaning liquid is injected. The atmosphere component measuring device 4 which measures the atmosphere in the cleaning apparatus 1 can measure at any timing, and can detect one or more of a flammable component, a combustible component and a oxdizer component.

Abstract translation: 发明内容本发明的目的是提供一种用于清洁能够防止污染因子再次粘附的精密基板的清洁装置，以防止形成天然氧化物膜并防止水痕。 解决方法在清洁装置1中，将待清洗基体2设置在容器3内，测量容器3内的气氛的气氛成分测量装置4，气氛控制气体 ，并且排气装置6和7设置在清洁装置1中，清洁装置1包括至少一个气体供应装置5，其从与待清洁表面相对的部分等同地供应气体，气体供应装置 21，用于将气体供给到包括圆柱形固定轴16，流体轴承17和旋转支撑构件18的旋转/保持机构，用于将气体排放到排水机构中的气体排出装置7，以及用于供应气体的气体供给装置31 注入清洗液时的气氛。 测量清洁装置1中的气氛的气氛成分测量装置4可以在任何时刻测量，并且可以检测可燃组分，可燃组分和氧化剂组分中的一种或多种。

公开(公告)号：US07477475B2

公开(公告)日：2009-01-13

申请号：US11747464

申请日：2007-05-11

Applicant: Toshiyuki Hirose ,  Hideki Nonoyama ,  Osamu Nakamura ,  Akira Itou ,  Yoshinori Saito

Inventor： Toshiyuki Hirose ,  Hideki Nonoyama ,  Osamu Nakamura ,  Akira Itou ,  Yoshinori Saito

IPC: G11B5/584

CPC classification number: G11B5/534 ,  G11B5/588

Abstract: Disclosed herein is a helical scan type magnetic tape reproduction apparatus, including: a helical scan type reproduction head capable of moving in the track widthwise direction by displacement of said actuator itself; target time decision means for measuring a period of time from a reference point of time with regard to each of a plurality of markers recorded in a dispersed relationship at predetermined positions on the tracks in advance to the marker by a predetermined number of times, averaging the measurement time periods of the markers and storing the average time periods; and tracking control means for measuring actual time periods from the reference time points with regard to the markers and performing updating control of a control voltage to be applied to said actuator for said reproduction head in accordance with time information of the differences between the target time periods and the actual time periods.

Abstract translation: 这里公开了一种螺旋扫描型磁带再现装置，包括：能够通过所述致动器本身的位移沿轨道宽度方向移动的螺旋扫描型再现头; 目标时间决定装置，用于相对于在轨道上的预定位置以分散关系记录的多个标记中的每一个，从参考时间点预先指定预定次数来测量一段时间， 标记的测量时间段并存储平均时间段; 以及跟踪控制装置，用于根据标记的参考时间点测量实际时间段，并根据目标时间段之间的差异的时间信息执行要施加到所述再现头的所述致动器的控制电压的更新控制 和实际时间段。

公开(公告)号：US07465593B2

公开(公告)日：2008-12-16

申请号：US12007293

申请日：2008-01-09

Applicant: Shunpei Yamazaki ,  Masaharu Nagai ,  Osamu Nakamura

Inventor： Shunpei Yamazaki ,  Masaharu Nagai ,  Osamu Nakamura

IPC: H01L21/00

CPC classification number: H01L27/3244 ,  G02F1/13454 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/3246 ,  H01L27/3258 ,  H01L51/5246 ,  H01L51/529 ,  H01L2251/5323

Abstract: It is an object of the present invention to provide a high reliable EL display device and a manufacturing method thereof by shielding intruding moisture or oxygen which is a factor of deteriorating the property of an EL element without enlarging the EL display device.In the invention, application is used as a method for forming a high thermostability planarizing film 16, typically, an interlayer insulating film (a film which serves as a base film of a light emitting element later) of a TFT in which a skeletal structure is configured by the combination of silicon (Si) and oxygen (O). After the formation, an edge portion or an opening portion is formed to have a tapered shape. Afterwards, distortion is given by adding an inert element with a comparatively large atomic radius to modify or highly densify a surface (including a side surface) for preventing the intrusion of moisture or oxygen.

Abstract translation: 本发明的目的是提供一种高可靠性的EL显示装置及其制造方法，该EL显示装置及其制造方法通过屏蔽侵入的水分或氧气，这是使EL元件的特性劣化而不扩大EL显示装置的因素。 在本发明中，作为用于形成高热稳定性平坦化膜16的方法，通常使用其中骨架结构是TFT的TFT层的绝缘膜（用作发光元件的基膜的膜） 由硅（Si）和氧（O）的组合构成。 在形成之后，形成具有锥形形状的边缘部分或开口部分。 然后，通过添加具有较大原子半径的惰性元素来改变或高度致密化表面（包括侧表面）以防止水分或氧气的侵入而给出变形。

公开(公告)号：US07401885B2

公开(公告)日：2008-07-22

申请号：US11197835

申请日：2005-08-05

Applicant: Shunpei Yamazaki ,  Osamu Nakamura

Inventor： Shunpei Yamazaki ,  Osamu Nakamura

IPC: B41J2/015 ,  B41J2/14 ,  B41J2/175

CPC classification number: B41J2/165 ,  B41J2/14016 ,  B41J2/14201 ,  B41J2202/05

Abstract: An object of the invention is to provide a droplet discharge apparatus which does not cause defective discharge due to drying, solidification, or the like of a composition in discharging the composition from a nozzle. One feature of the invention is to comprise a nozzle portion provided with a nozzle hole for discharging a composition, a piezo method for discharging the composition from the nozzle hole, a channel for supplying the composition to the bottom surface of the nozzle portion, wherein lyophilic treatment is performed on the bottom surface of the nozzle portion.

Abstract translation: 本发明的目的是提供一种液滴喷射装置，其在从喷嘴排出组合物时不会由于组合物的干燥，固化等而引起不良的排出。 本发明的一个特征是包括一个喷嘴部分，其具有用于排出组合物的喷嘴孔，用于从喷嘴孔排出组合物的压电方法，用于将组合物供给到喷嘴部分的底表面的通道，其中亲液 在喷嘴部的底面上进行处理。

公开(公告)号：US07384860B2

公开(公告)日：2008-06-10

申请号：US10941000

申请日：2004-09-15

Applicant: Osamu Nakamura ,  Manabu Katsumura ,  Shunpei Yamazaki

Inventor： Osamu Nakamura ,  Manabu Katsumura ,  Shunpei Yamazaki

IPC: H01L21/36 ,  H01L21/20 ,  H01L21/84

CPC classification number: H01L21/02672 ,  H01L21/2022 ,  H01L21/3226 ,  H01L27/1277 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

Abstract: The present invention relates to a method of manufacturing a semiconductor device having an excellent gettering effect. In this method, when phosphorus is added to a poly-Si film, which has been crystallized by the addition of a metal, to subject the resultant poly-Si film to the heat treatment to carry out gettering therefor, the device is performed for the shape of the island-like insulating film on the poly-Si film which is employed when implanting phosphorus. Thereby, the area of the boundary surface between the region to which phosphorus has been added and the region to which no phosphorus has been added is increased to enhance gettering efficiency.

Abstract translation: 本发明涉及一种制造具有优异吸气效果的半导体器件的方法。 在这种方法中，当通过添加金属将已经结晶的多晶硅膜加入磷中时，为了进行吸热而使得到的多晶硅膜进行热处理，对于 在植入磷时使用的多晶硅膜上的岛状绝缘膜的形状。 由此，增加了添加了磷的区域与没有添加磷的区域之间的边界面的面积，以提高吸气效率。

公开(公告)号：US07332432B2

公开(公告)日：2008-02-19

申请号：US10946649

申请日：2004-09-22

Applicant: Osamu Nakamura ,  Kiyofumi Ogino

Inventor： Osamu Nakamura ,  Kiyofumi Ogino

IPC: H01L21/44

CPC classification number: H01L51/0022 ,  G09G2300/0814 ,  H01L21/288 ,  H01L21/76838 ,  H01L27/3244 ,  H01L27/3276 ,  H01L51/56 ,  H01L2251/5315 ,  H01L2251/5323

Abstract: As a semiconductor device, specifically, a pixel portion included in a semiconductor device is made to have higher precision and higher aperture ratio, it is required to form a smaller wiring in width. In the case of forming a wiring by using an ink-jet method, a dot spreads on a wiring formation surface, and it is difficult to narrow width of a wiring. In the present invention, a photocatalytic substance typified by TiO2 is formed on a wiring formation surface, and a wiring is formed by utilizing photocatalytic activity of the photocatalytic substance. According to the present invention, a narrower wiring, that is, a smaller wiring in width than a diameter of a dot formed by an ink-jet method can be formed.

Abstract translation: 作为半导体装置，具体地说，将包括在半导体器件中的像素部分制成具有更高的精度和更高的开口率，需要在宽度上形成更小的布线。 在通过喷墨法形成布线的情况下，点布线在布线形成面上，难以缩小布线的宽度。 在本发明中，在布线形成面上形成以TiO 2为代表的光催化剂物质，利用光催化剂的光催化活性形成配线。 根据本发明，可以形成较窄的布线，即宽度小于通过喷墨法形成的点的直径的布线。

公开(公告)号：US20080026490A1

公开(公告)日：2008-01-31

申请号：US11826861

申请日：2007-07-19

Applicant: Etsuko Asano ,  Osamu Nakamura ,  Masayuki Sakakura

Inventor： Etsuko Asano ,  Osamu Nakamura ,  Masayuki Sakakura

IPC: H01L21/66

CPC classification number: H01L29/78627 ,  H01L22/34

Abstract: The reliability of a GOLD structure TFT depends on an impurity concentration in its gate-overlapped region. Thus, it is an object of the present invention to obtain a resistance distribution corresponding to a tapered shape of a gate electrode in a gate-overlapped region. According to the present invention, plural TEGs are manufactured as Lov resistance monitors in which mask alignment is misaligned with several μm interval to perform a resistance measurement on each of the TEGs. Consequently, a resistance distribution corresponding to a tapered shape can be obtained in a channel forming region, a gate-overlapped region and a source/drain region.

Abstract translation: GOLD结构TFT的可靠性取决于其栅极重叠区域中的杂质浓度。 因此，本发明的目的是获得对应于栅极重叠区域中的栅电极的锥形形状的电阻分布。 根据本发明，将多个TEG制造为Lov电阻监视器，其中掩模对准以几个间隔间隔对准，以对每个TEG执行电阻测量。 因此，可以在沟道形成区域，栅极重叠区域和源极/漏极区域中获得对应于锥形形状的电阻分布。

公开(公告)号：US07314785B2

公开(公告)日：2008-01-01

申请号：US10968240

申请日：2004-10-20

Applicant: Shunpei Yamazaki ,  Osamu Nakamura ,  Aki Yamamiti ,  Naoto Yamade

Inventor： Shunpei Yamazaki ,  Osamu Nakamura ,  Aki Yamamiti ,  Naoto Yamade

IPC: H01L21/336 ,  H01L21/00 ,  H01L21/84

CPC classification number: H01L27/1259 ,  H01L27/1214 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3272 ,  H01L51/5206 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5284 ,  H01L2251/5323 ,  H01L2251/552

Abstract: A display device with improved reliability and a manufacturing method of the same with improved yield. A display device according to the invention comprises a display area including a first electrode, an insulating layer covering an edge of the first electrode, a layer containing an organic compound, which is formed on the first electrode, and a second electrode. The first electrode and the insulating layer are doped with an impurity element of one conductivity.

Abstract translation: 一种可靠性提高的显示装置及其制造方法，其产率提高。 根据本发明的显示装置包括显示区域，包括第一电极，覆盖第一电极的边缘的绝缘层，形成在第一电极上的含有机化合物的层和第二电极。 第一电极和绝缘层掺杂有一种导电性的杂质元素。

公开(公告)号：US20070099440A1

公开(公告)日：2007-05-03

申请号：US11637914

申请日：2006-12-13

Applicant: Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji

Inventor： Shunpei Yamazaki ,  Osamu Nakamura ,  Hironobu Shoji

IPC: H01L21/00

CPC classification number: H01L21/02686 ,  C30B1/023 ,  C30B1/08 ,  C30B29/06 ,  H01L21/02683 ,  H01L21/2026

Abstract: [Object]It is an object of the present invention to provide a laser irradiation apparatus being able to crystallize the semiconductor film homogeneously while suppressing the variation of the crystallinity in the semiconductor film and the unevenness of the state of the surface thereof. It is another object of the present invention to provide a method for manufacturing a semiconductor device using the laser irradiation apparatus which can suppress the variation of on-current, mobility, and threshold of TFT, and to further provide a semiconductor device manufactured with the manufacturing method. [Solution]A method for manufacturing a semiconductor device comprising the steps of adding the first noble gas to the semiconductor film formed over the insulating surface with the ion doping method and irradiating the semiconductor film with the first noble gas added therein with the laser light in an atmosphere of second noble gas, wherein the magnetic field is applied to the semiconductor film with the first noble gas added when the laser light is irradiated.

Abstract translation: 本发明的目的是提供一种激光照射装置，其能够在抑制半导体膜中的结晶性的变化和其表面状态的不均匀的同时，均匀地结晶半导体膜。 本发明的另一个目的是提供一种使用能够抑制TFT的导通电流，迁移率和阈值的变化的激光照射装置的半导体器件的制造方法，并且进一步提供利用制造制造的半导体器件 方法。 [解决方案]一种半导体器件的制造方法，其特征在于，包括以下步骤：通过离子掺杂法将形成在绝缘表面上的半导体膜添加第一稀有气体，并将其中添加有激光的第一稀土气体照射到半导体膜 第二惰性气体的气氛，其中当照射激光时，将第一稀有气体施加到半导体膜上。