公开(公告)号：US10566377B2

公开(公告)日：2020-02-18

申请号：US16130309

申请日：2018-09-13

Applicant: OmniVision Technologies, Inc.

Inventor： Xin Wang ,  Dajing Yang ,  Qin Wang ,  Duli Mao ,  Dyson Hsin-Chih Tai

IPC: H01L27/146

Abstract: An image sensor includes a substrate, a plurality of light sensitive pixels, a first plurality of color filters, a plurality of reflective sidewalls, and a second plurality of color filters. The light sensitive pixels are formed on said substrate. The first plurality of color filters is disposed over a first group of the light sensitive pixels. The reflective sidewalls are formed on each side of each of the first plurality of color filters. The second plurality of color filters are disposed over a second group of light sensitive pixels and each color filter of the second plurality of color filters is separated from each adjacent filter of said first plurality of color filters by one of the reflective sidewalls. In a particular embodiment an etch-resistant layer is disposed over the first plurality of color filters and the second group of light sensitive pixels.

公开(公告)号：US10334191B1

公开(公告)日：2019-06-25

申请号：US15910883

申请日：2018-03-02

Applicant: OmniVision Technologies, Inc.

Inventor： Dajiang Yang ,  Zhiyong Zhan ,  Chen-wei Lu ,  Duli Mao ,  Xin Wang ,  Keiji Mabuchi

IPC: H04N5/335 ,  H04N5/355 ,  H01L27/146 ,  H04N5/378

Abstract: A pixel cell includes a second photodiode laterally surrounding a first photodiode in semiconductor material. The first and second photodiodes are adapted to photogenerate image charge in response to incident light. A floating diffusion is disposed in the semiconductor material proximate to an outer perimeter of the second photodiode. A first transfer gate is disposed proximate to the semiconductor material over a first channel region between the first and second photodiodes. The first transfer gate is coupled to transfer the image charge from the first photodiode to the second photodiode. A second transfer gate is disposed proximate to the semiconductor material over a second channel region between the second photodiode and the floating diffusion. The second transfer gate is coupled to transfer the image charge from the second photodiode to the floating diffusion.

公开(公告)号：US20190165033A1

公开(公告)日：2019-05-30

申请号：US16242924

申请日：2019-01-08

Applicant: OmniVision Technologies, Inc.

Inventor： Qin Wang ,  Gang Chen ,  Duli Mao

IPC: H01L27/146 ,  H01L23/00 ,  H01L27/148 ,  H01L21/768

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge, and a metal grid, including a metal shield that is coplanar with the metal grid, disposed proximate to a backside of the semiconductor material. The metal grid is optically aligned with the plurality of photodiodes to direct the image light into the plurality of photodiodes, and a contact pad is disposed in a trench in the semiconductor material. The contact pad is coupled to the metal shield to ground the metal shield.

公开(公告)号：US10290670B2

公开(公告)日：2019-05-14

申请号：US15195926

申请日：2016-06-28

Applicant: OmniVision Technologies, Inc.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Lequn Liu

IPC: H01L27/146

Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.

公开(公告)号：US10218924B2

公开(公告)日：2019-02-26

申请号：US15485534

申请日：2017-04-12

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Duli Mao ,  Hiroaki Ebihara ,  Kazufumi Watanabe

IPC: H04N5/335 ,  H01L27/146 ,  H04N5/374 ,  H04N5/378 ,  H04N5/355 ,  H04N5/3745

Abstract: A pixel circuit for use in a high dynamic range (HDR) image sensor includes a photodiode and a floating diffusion is disposed in the first semiconductor wafer. A transfer transistor is disposed in the first semiconductor wafer and is adapted to be switched on to transfer the charge carriers photogenerated in the photodiode to the floating diffusion. An in-pixel capacitor is disposed in a second semiconductor wafer. The first semiconductor wafer is stacked with and coupled to the second semiconductor wafer. A dual floating diffusion (DFD) transistor is disposed in the first semiconductor wafer. The in-pixel capacitor is selectively coupled to the floating diffusion through the DFD transistor. The floating diffusion is set to low conversion gain in response to the in-pixel capacitor being coupled to the floating diffusion, and high conversion gain in response to the in-pixel capacitor being decoupled from the floating diffusion.

公开(公告)号：US10211253B1

公开(公告)日：2019-02-19

申请号：US15826276

申请日：2017-11-29

Applicant: OmniVision Technologies, Inc.

Inventor： Qin Wang ,  Gang Chen ,  Duli Mao

IPC: H01L27/146 ,  H01L27/148 ,  H01L21/768 ,  H01L23/00

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge, and a metal grid, including a metal shield that is coplanar with the metal grid, disposed proximate to a backside of the semiconductor material. The metal grid is optically aligned with the plurality of photodiodes to direct the image light into the plurality of photodiodes, and a contact pad is disposed in a trench in the semiconductor material. The contact pad is coupled to the metal shield to ground the metal shield.

公开(公告)号：US20190013348A1

公开(公告)日：2019-01-10

申请号：US16130309

申请日：2018-09-13

Applicant: OmniVision Technologies, Inc.

Inventor： Xin Wang ,  Dajiang Yang ,  Qin Wang ,  Duli Mao ,  Dyson Hsin-Chih Tai

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14629

Abstract: An image sensor includes a substrate, a plurality of light sensitive pixels, a first plurality of color filters, a plurality of reflective sidewalls, and a second plurality of color filters. The light sensitive pixels are formed on said substrate. The first plurality of color filters is disposed over a first group of the light sensitive pixels. The reflective sidewalls are formed on each side of each of the first plurality of color filters. The second plurality of color filters are disposed over a second group of light sensitive pixels and each color filter of the second plurality of color filters is separated from each adjacent filter of said first plurality of color filters by one of the reflective sidewalls. In a particular embodiment an etch-resistant layer is disposed over the first plurality of color filters and the second group of light sensitive pixels.

公开(公告)号：US10044960B2

公开(公告)日：2018-08-07

申请号：US15164276

申请日：2016-05-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Trygve Willassen ,  Johannes Solhusvik ,  Keiji Mabuchi ,  Gang Chen ,  Sohei Manabe ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Zhiqiang Lin ,  Siguang Ma ,  Dajiang Yang ,  Boyd Albert Fowler

IPC: H04N5/374 ,  H04N5/232

Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.

公开(公告)号：US09986192B1

公开(公告)日：2018-05-29

申请号：US15362402

申请日：2016-11-28

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dyson H. Tai ,  Duli Mao ,  Vincent Venezia ,  Gang Chen ,  Chih-Wei Hsiung

IPC: H04N5/378 ,  H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/378

Abstract: An image sensor includes a semiconductor material including a photodiode disposed in the semiconductor material and an insulating material. A surface of the semiconductor material is disposed between the insulating material and the photodiode. The image sensor also includes isolation structures disposed in the semiconductor material and in the insulating material, and the isolation structures extend from within the semiconductor material through the surface and into the insulating material. The isolation structures include a core material and a liner material. The liner material is disposed between the core material and the semiconductor material, and is also disposed between the insulating material and the core material.

公开(公告)号：US20180098008A1

公开(公告)日：2018-04-05

申请号：US15285352

申请日：2016-10-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Trygve Willassen ,  Johannes Solhusvik ,  Keiji Mabuchi ,  Gang Chen ,  Sohei Manabe ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Zhiqiang Lin

IPC: H04N5/361 ,  H04N5/374 ,  H04N5/378 ,  H01L27/146

CPC classification number: H04N5/361 ,  H01L27/14636 ,  H01L27/14656 ,  H04N5/374 ,  H04N5/378

Abstract: Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity. The first source-follower transistor may be directly coupled to the first floating diffusion by a gate, the first source-follower to selectively output a first signal to a first bitline in response to enablement of a first row selection transistor, and the second source-follower transistor may be capacitively-coupled to the second floating diffusion, the second source-follower to selectively output a second signal to a second bitline in response to enablement of a second row selection transistor.