摘要:
A porous scintillator crystal capable of suppressing scattering of light that represents a high spatial resolution is provided. The porous scintillator crystal comprises a porous structure including voids, wherein the porous structure is a phase-separated structure having voids formed therein and comprises materials constituting a eutectic composition of the phase-separated structure and at least one void in the porous structure extend in a direction perpendicular to a principal plane of the porous scintillator crystal.
摘要:
Provided is a scintillator used for detecting radiation in an X-ray CT scanner or the like, the scintillator having a unidirectional phase separation structure having an optical waveguide function, which eliminates the need of formation of partition walls for preventing crosstalks. The scintillator has the phase separation structure including: a first crystal phase including multiple columnar crystals having unidirectionality; and a second crystal phase filling space on the side of the first crystal phase. The second crystal phase includes a material represented by Cs3Cu2[XaY1-a]5, where X and Y are elements which are different from each other and which are selected from the group consisting of I, Br, and Cl, and 0≦a≦1 is satisfied.
摘要翻译:提供了用于检测X射线CT扫描仪等中的辐射的闪烁体,该闪烁体具有具有光波导功能的单向相分离结构,其消除了形成用于防止串扰的分隔壁的需要。 闪烁体具有相分离结构,包括:包含具有单向的多个柱状晶体的第一晶相; 以及在第一结晶相侧的第二晶相填充空间。 第二结晶相包括由Cs 3 Cu 2 [X y Y 1-a] 5表示的材料,其中X和Y是彼此不同的并且选自I,Br和Cl的元素,并且0 @ a @ 1满足。
摘要:
The present invention relates to an X-ray imaging apparatus including an X-ray source, a grating that divides diverging X-rays irradiated from the X-ray source, and a detector that detects X-rays which are divided by the grating and pass through a sample. The grating includes a plurality of transparent objects which pass the diverging X-rays and a plurality of opaque objects that shield the diverging X-rays. A focused position at which a plurality of extended lines intersect each other and the X-ray source are arranged in different position. The extended lines are formed by extending center lines which connect a center of the X-ray source side of each of the plurality of opaque objects facing the X-ray source with a center of the detector side of each of the plurality of opaque objects facing the detector.
摘要:
An analysis method for use in a radiation imaging apparatus employing intensity information of interference fringes of radiation rays that have passed through a detected object includes the steps of generating first phase information of the detected object wrapped into a range of 2π from the intensity information of the interference fringes; generating information on an absorption intensity gradient of the detected object from the intensity information of the interference fringes; generating a weighting function on the basis of an absolute value of a gradient in the information on the absorption intensity gradient; and generating second phase information by unwrapping the first phase information by using the weighting function.
摘要:
To provide a filmy structure of a nanometer size having a phase-separated structure effective for the case where a compound can be formed between two kinds of materials. A structure constituted by a first member containing a compound between an element A except both Si and Ge and SinGe1-n (where 0≦n≦1) and a second member containing one of the element A and SinGe1-n (where 0≦n≦1), in which one of the first member and the second member is a columnar member, formed on a substrate, whose side face is surrounded by the other member, the ratio Dl/Ds of an average diameter Dl in the major axis direction to an average diameter Ds in the minor axis direction of a transverse sectional shape of the columnar member is less than 5, and the element A is one of Li, Na, Mg, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Rb, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Cs, Ba, La, Hf, Ta, W, Re, Os, Ir, Pt, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and B.
摘要:
A novel structure is provided in which an ordered alloy material is filled in pores of the structure. A process for producing the structure is also provided. The process comprises a first step for forming an alloy in pores of a porous layer, a second step for forming a film composed of a second material on the porous layer, and a third step for heat-treating the porous layer having the film. Further a process is provided for producing a structure containing fine L10-crystal grains with a low-temperature heat treatment. This process comprises a process for producing a structure containing a magnetic substance dispersed in a nonmagnetic material, comprising: forming a first layer containing a magnetic substance A dispersed in a nonmagnetic material, forming a second layer containing a magnetic substance B on the first layer, and heating the first layer and the second layer during or after formation of the second layer to connect the magnetic substance A and the magnetic substance B to form an ordered alloy.
摘要:
A method of manufacturing a radiation-detecting device including spaced first columnar scintillators, second columnar scintillators which are located between the neighboring first columnar scintillators and which are spaced from the first columnar scintillators, and photodetecting elements overlapping with the first columnar scintillators includes a step of preparing the substrate such that the substrate has a surface having an uneven section having protruding portions and a plurality of spaced flat sections surrounded by the uneven section and also includes a step of forming the first columnar scintillators and the second columnar scintillators on the flat sections and the protruding portions, respectively, by depositing a scintillator material on the substrate having the uneven section and the flat sections. The uneven section has recessed portions and satisfies the following inequality: h/d≧1 where h is the depth of each recessed portion and d is the distance between the protruding portions.
摘要:
The present invention provides a method of manufacturing a magnetic recording medium having high recording density. The magnetic recording medium manufacturing method of the present invention is directed to a manufacturing method including: disposing at least a silicon layer on a substrate; disposing an uneven structure including regularly arranged projections on the silicon layer; disposing magnetic material on the upper surfaces of the projections and within recessed parts of the uneven structure; and allowing the magnetic material disposed within each recessed part to be changed into silicon compound by heat treatment.
摘要:
A process for producing a patterned structure comprises imprinting a first pattern by pressing a stamper having a projection-depression configuration on the surface against an imprint-work layer, and imprinting a second pattern by displacing relatively the stamper from the position of the first pattern to another position on the imprint-work layer and then pressing the stamper against the imprint-work layer.
摘要:
To provide a filmy structure of a nanometer size having a phase-separated structure effective for the case where a compound can be formed between two kinds of materials. A structure constituted by a first member containing a compound between an element A except both Si and Ge and SinGe1-n (where 0≦n≦1) and a second member containing one of the element A and SinGe1-n (where 0≦n≦1), in which one of the first member and the second member is a columnar member, formed on a substrate, whose side face is surrounded by the other member, the ratio Dl/Ds of an average diameter Dl in the major axis direction to an average diameter Ds in the minor axis direction of a transverse sectional shape of the columnar member is less than 5, and the element A is one of Li, Na, Mg, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Rb, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Cs, Ba, La, Hf, Ta, W, Re, Os, Ir, Pt, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and B.
摘要翻译:为了提供具有相分离结构的纳米尺寸的薄膜结构,对于在两种材料之间可以形成化合物的情况是有效的。 由除了Si和Ge之外的元素A和Si(Si)1-n(其中0 <= n <1)之间的元素A之间的化合物的第一元件构成的结构, 以及包含元素A和Si N 1-n N(其中0 <= n <= 1)之一的第二元件,其中第一元件和 第二构件是形成在基板上的柱状构件,其侧面被另一构件包围,长轴方向上的平均直径D1的比D1 / Ds相对于短轴方向的平均直径Ds 柱状构件的横截面形状小于5,元素A为Li,Na,Mg,K,Ca,Sc,Ti,V,Cr,Mn,Fe,Co,Ni,Cu,Rb,Sr ,Y,Zr,Nb,Mo,Ru,Rh,Pd,Cs,Ba,La,Hf,Ta,W,Re,Os,Ir,Pt,Ce,Pr,Nd,Sm,Gd,Tb,Dy,Ho ,Er,Tm,Yb,Lu和B.