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    Semiconductor device
    34.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10903404B2

    公开(公告)日：2021-01-26

    申请号：US16473593

    申请日：2017-12-26

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Seung Hwan Kim ,  Won Ho Kim ,  Chong Cook Kim ,  Deok Won Seo ,  Yeo Jae Yoon ,  Kwang Ki Choi

    IPC: H01L33/58 ,  H01L33/10 ,  H01L33/32 ,  H01L33/38 ,  H01L33/46 ,  H01L33/06 ,  H01L33/20 ,  H01L27/15 ,  G08C23/04

    Abstract: An embodiment discloses a semiconductor device comprising: a semiconductor structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode disposed on the first conductive semiconductor layer; a 2-1 electrode disposed on the second conductive semiconductor layer; and a 2-2 electrode disposed on the second conductive semiconductor layer and spaced apart from the 2-1 electrode, wherein the thickness of a part of the second conductive semiconductor layer between the 2-1 electrode and the 2-2 electrode is smaller than the thickness of the second conductive semiconductor layer vertically overlapping with the 2-1 electrode and the 2-2 electrode; the 2-2 electrode is opposite to the 2-1 electrode and comprises a first region that is closest to the 2-1 electrode; the 2-1 electrode is opposite to the 2-2 electrode and comprises a second region that is closest to the 2-2 electrode; and the relationship between the width (W1) of the first region and the width (W2) of the second region is W1≥W2.

    Light emitting device, electrode structure, light emitting device package, and lighting system
    39.
    发明授权
    Light emitting device, electrode structure, light emitting device package, and lighting system 有权
    发光器件，电极结构，发光器件封装和照明系统

    公开(公告)号：US09496460B2

    公开(公告)日：2016-11-15

    申请号：US14055657

    申请日：2013-10-16

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Kwang Ki Choi ,  Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song

    IPC: H01L33/58 ,  H01L29/00 ,  H01L33/38 ,  H01L33/44 ,  F21V8/00

    CPC classification number: H01L33/38 ,  G02B6/0073 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: Provided are a light emitting device, an electrode structure, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure layer comprising a first semiconductor layer, a second semiconductor layer, and an active layer. An electrode disposed on a top surface of the first semiconductor layer, a first layer includes a transmittive oxide material between the top surface of the first semiconductor layer and the electrode, and a second layer disposed is disposed between the first layer and the electrode, wherein the first layer is formed in a different material from the second layer, wherein the electrode comprises a lower portion connected to the first semiconductor layer and an upper portion on a top surface of the second layer.

    Abstract translation: 提供发光器件，电极结构，发光器件封装和照明系统。 发光器件包括包括第一半导体层，第二半导体层和有源层的发光结构层。 设置在第一半导体层的顶表面上的电极，第一层包括在第一半导体层的顶表面和电极之间的透射氧化物材料，并且设置在第一层和电极之间的第二层，其中 第一层以与第二层不同的材料形成，其中电极包括连接到第一半导体层的下部分和第二层顶表面上的上部。

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