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    Light emitting device package having improved reliability, and lighting apparatus including the package
    1.
    发明授权
    Light emitting device package having improved reliability, and lighting apparatus including the package 有权

    公开(公告)号：US10475978B2

    公开(公告)日：2019-11-12

    申请号：US16250408

    申请日：2019-01-17

    申请人： LG INNOTEK CO., LTD.

    发明人： Sang Youl Lee ,  Kwang Ki Choi

    IPC分类号： H01L33/62 ,  H01L33/38 ,  H01L33/48 ,  H01L33/60 ,  H01L33/20

    摘要： Embodiments provide a light emitting device package including a substrate, a light emitting structure disposed under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes connected to the first and second conductive semiconductor layers, a first pad connected to the first electrodes in first-first through-holes penetrating the second conductive semiconductor layer and the active layer, and a first insulation layer disposed between the first pad and the second conductive semiconductor layer and between the first pad and the active layer to cover the first electrodes in a first-second through-hole, and a second pad connected to the second electrode through a second through-hole penetrating the first insulation layer and electrically spaced apart from the first pad. The second pad does not overlap the first insulation layer in the first-second through-hole in a thickness direction of the light emitting structure.

    Light emitting device package and lighting apparatus including the package
    3.
    发明授权
    Light emitting device package and lighting apparatus including the package 有权

    公开(公告)号：US09735328B2

    公开(公告)日：2017-08-15

    申请号：US14885427

    申请日：2015-10-16

    申请人： LG INNOTEK CO., LTD.

    发明人： Sang Youl Lee ,  Kwang Ki Choi

    IPC分类号： H01L33/62 ,  H01L33/38 ,  H01L33/60 ,  H01L33/20 ,  H01L33/48

    CPC分类号： H01L33/62 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/387 ,  H01L33/483 ,  H01L33/486 ,  H01L33/60 ,  H01L2224/16

    摘要： Embodiments provide a light emitting device package including a substrate, a light emitting structure disposed under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes connected to the first and second conductive semiconductor layers, a first pad connected to the first electrodes in first-first through-holes penetrating the second conductive semiconductor layer and the active layer, and a first insulation layer disposed between the first pad and the second conductive semiconductor layer and between the first pad and the active layer to cover the first electrodes in a first-second through-hole, and a second pad connected to the second electrode through a second through-hole penetrating the first insulation layer and electrically spaced apart from the first pad. The second pad does not overlap the first insulation layer in the first-second through-hole in a thickness direction of the light emitting structure.

    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE COMPRISING THE SAME AND LIGHTING SYSTEM
    7.
    发明申请
    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE COMPRISING THE SAME AND LIGHTING SYSTEM 审中-公开
    发光装置，包含其的发光装置包装和照明系统

    公开(公告)号：US20150048308A1

    公开(公告)日：2015-02-19

    申请号：US14500311

    申请日：2014-09-29

    申请人： LG INNOTEK CO., LTD.

    发明人： Hwan Hee Jeong ,  Kwang Ki Choi ,  June O Song ,  Sang Youl Lee

    IPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/22 ,  H01L33/00 ,  H01L33/14 ,  H01L33/06 ,  H01L33/44

    CPC分类号： H01L33/38 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/145 ,  H01L33/22 ,  H01L33/32 ,  H01L33/36 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A light emitting device including a support substrate, an adhesive layer on the support substrate, a conductive layer on the adhesive layer, a light emitting structure on the conductive layer, the light emitting structure including a first semiconductor layer containing AlGaN, an active layer, and a second semiconductor layer containing AlGaN, a first electrode on the light emitting structure, a metal layer disposed under the conductive layer and at an adjacent region of the conductive layer, and a passivation layer disposed on a side surface of the light emitting structure, wherein the first electrode is vertically non-overlapped with the conductive layer, wherein the conductive layer includes a first layer and a second layer on the first layer, wherein the second layer directly contacts with the light emitting structure, wherein the metal layer directly contacts with the light emitting structure, wherein the metal layer is expanded to an outer area of the light emitting structure, and wherein the passivation layer is disposed on the metal layer at the outer surface of the light emitting structure.

    摘要翻译： 一种发光器件，包括支撑衬底，支撑衬底上的粘合剂层，粘合剂层上的导电层，导电层上的发光结构，发光结构包括含有AlGaN的第一半导体层，有源层， 以及包含AlGaN的第二半导体层，所述发光结构上的第一电极，设置在所述导电层下方和所述导电层的相邻区域的金属层，以及设置在所述发光结构的侧表面上的钝化层， 其中所述第一电极与所述导电层垂直不重叠，其中所述导电层包括在所述第一层上的第一层和第二层，其中所述第二层直接与所述发光结构接触，其中所述金属层直接与 所述发光结构，其中所述金属层扩展到所述发光结构的外部区域， d，其中钝化层设置在发光结构的外表面处的金属层上。

    Light-emitting element
    9.
    发明授权
    Light-emitting element 有权

    公开(公告)号：US10217905B2

    公开(公告)日：2019-02-26

    申请号：US15576563

    申请日：2016-05-25

    申请人： LG INNOTEK CO., LTD.

    发明人： Sun Woo Park ,  Dong Hyun Sung ,  Dae Hee Lee ,  Byoung Woo Lee ,  Kwang Ki Choi ,  Jae Cheon Han

    IPC分类号： H01L33/38 ,  H01L33/36 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L33/00

    摘要： Disclosed according to one embodiment is a light-emitting element comprising: a light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a second conductive layer electrically connected to the second semiconductor layer; a first conductive layer comprising a plurality of through electrodes electrically connected to the first semiconductor layer through the second conductive layer and the light-emitting structure; an insulation layer for electrically insulating the plurality of through electrodes from the active layer, the second semiconductor layer, and the second conductive layer; and an electrode pad disposed in an exposed area of the second conductive layer, wherein the plurality of through electrodes differ in the area of a first region electrically connected to the first semiconductor layer.

    Structure of a reflective electrode and an OHMIC layer of a light emitting device
    10.
    发明授权
    Structure of a reflective electrode and an OHMIC layer of a light emitting device 有权

    公开(公告)号：US10141478B2

    公开(公告)日：2018-11-27

    申请号：US15069758

    申请日：2016-03-14

    申请人： LG Innotek Co., Ltd.

    发明人： Hwan Hee Jeong ,  Kwang Ki Choi ,  June O Song ,  Sang Youl Lee

    IPC分类号： H01L33/38 ,  H01L33/36 ,  H01L33/62 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/32 ,  H01L33/44 ,  H01L33/40

    摘要： A light emitting device including a substrate, a first conductive layer on the substrate, a second conductive layer on the first conductive layer, a metal layer on the second conductive layer, a light emitting structure on the metal layer and the second conductive layer, the light emitting structure including a first semiconductor layer containing AlGaN, an active layer, and a second semiconductor layer containing AlGaN, a first electrode on the light emitting structure, and a passivation layer disposed on a side surface of the light emitting structure. Further, the metal layer directly contacts with the light emitting structure, the second conductive layer directly contacts with the light emitting structure, a portion of the passivation layer is disposed on a top surface of the light emitting structure, a width of the second conductive layer greater than a width of the metal layer, and a distance between a top surface of the substrate and a bottom surface of the metal layer at a center portion of the metal layer is different from a distance between the top surface of the substrate and the bottom surface of the metal layer at a side portion of the metal layer.