公开(公告)号：US10903404B2

公开(公告)日：2021-01-26

申请号：US16473593

申请日：2017-12-26

Applicant: LG INNOTEK CO., LTD.

Inventor： Seung Hwan Kim ,  Won Ho Kim ,  Chong Cook Kim ,  Deok Won Seo ,  Yeo Jae Yoon ,  Kwang Ki Choi

IPC: H01L33/58 ,  H01L33/10 ,  H01L33/32 ,  H01L33/38 ,  H01L33/46 ,  H01L33/06 ,  H01L33/20 ,  H01L27/15 ,  G08C23/04

Abstract: An embodiment discloses a semiconductor device comprising: a semiconductor structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode disposed on the first conductive semiconductor layer; a 2-1 electrode disposed on the second conductive semiconductor layer; and a 2-2 electrode disposed on the second conductive semiconductor layer and spaced apart from the 2-1 electrode, wherein the thickness of a part of the second conductive semiconductor layer between the 2-1 electrode and the 2-2 electrode is smaller than the thickness of the second conductive semiconductor layer vertically overlapping with the 2-1 electrode and the 2-2 electrode; the 2-2 electrode is opposite to the 2-1 electrode and comprises a first region that is closest to the 2-1 electrode; the 2-1 electrode is opposite to the 2-2 electrode and comprises a second region that is closest to the 2-2 electrode; and the relationship between the width (W1) of the first region and the width (W2) of the second region is W1≥W2.