公开(公告)号：US06858308B2

公开(公告)日：2005-02-22

申请号：US10092617

申请日：2002-03-08

申请人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Ryo Hayashi ,  Shuichiro Sugiyama

发明人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Ryo Hayashi ,  Shuichiro Sugiyama

IPC分类号： B32B9/00 ,  H01L21/00 ,  H01L21/336 ,  H01L29/04 ,  H01L29/786 ,  H01L31/0368 ,  H01L31/075 ,  H01L31/18

CPC分类号： H01L29/66765 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78678 ,  H01L29/78696 ,  H01L31/03685 ,  H01L31/075 ,  H01L31/182 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521 ,  Y10T428/261

摘要： The invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal. The microcrystal is located in at least one interface region of the silicon-based film containing the microcrystal and has no orientation property. Further, the invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal, and the orientation property of the microcrystal changing in a film thickness direction of the silicon-based film containing the microcrystal. Thereby, a silicon-based film having a shortened tact time, an increased film forming rate, and excellent characteristics, and a semiconductor element including this silicon-based film having excellent adhesion and environmental resistance can be obtained.

摘要翻译： 本发明提供了一种半导体元件，其具有由硅基膜构成的半导体结，至少一个含有微晶的硅基膜。 微晶体位于含有微结晶的硅基膜的至少一个界面区域中，并且不具有取向性。 此外，本发明提供一种半导体元件，其具有由硅系膜构成的半导体结，含有微晶的硅系膜中的至少一种以及微晶在硅基膜的膜厚方向上的取向性 含有微晶的薄膜。 由此，可以获得具有缩短的生产时间缩短，成膜速度和优异特性的硅基膜，以及包含这种具有优异的粘附性和耐环境性的硅基膜的半导体元件。

公开(公告)号：US06794275B2

公开(公告)日：2004-09-21

申请号：US10113675

申请日：2002-04-02

申请人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Yuzo Koda ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Koichiro Moriyama

发明人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Yuzo Koda ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Koichiro Moriyama

IPC分类号： H01L21365

CPC分类号： H01L31/1804 ,  C23C16/46 ,  C23C16/463 ,  C23C16/505 ,  C23C16/52 ,  C23C16/545 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66765 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： In a process for forming a silicon-based film on a substrate according to the present invention, the substrate has a temperature gradient in the thickness direction thereof in the formation of the silicon-based film and the temperature gradient is made such that a deposition surface of the substrate has a higher temperature than a backside or the direction of the temperature gradient is reversed. With this configuration, the present invention provides a silicon-based thin film having good properties at a high deposition rate and provides a semiconductor device including it. The present invention also provides a semiconductor device including the silicon-based thin films that has good adhesion and weather-resisting properties and that can be manufactured in a short tact time.

摘要翻译： 在根据本发明的基板上形成硅基膜的方法中，在形成硅基膜时，基板在其厚度方向上具有温度梯度，并使温度梯度使得沉积表面 的衬底具有比背面更高的温度或温度梯度的方向反转。 利用这种结构，本发明提供一种在高沉积速率下具有良好性能的硅基薄膜，并提供包括它的半导体器件。 本发明还提供一种半导体器件，其包括硅基薄膜，其具有良好的粘合性和耐候性，并且可以在短的时间内制造。

公开(公告)号：US20080291350A1

公开(公告)日：2008-11-27

申请号：US12123103

申请日：2008-05-19

申请人： Ryo Hayashi ,  Masafumi Sano

发明人： Ryo Hayashi ,  Masafumi Sano

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： In an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, a device separation region provided between the plural thin film transistors and the semiconductor region are constituted by a same metal oxide layer, and resistance of the semiconductor region is formed to be lower than resistance of the device separation region.

摘要翻译： 在基板上设置有至少具有源电极，漏电极，包括沟道的半导体区域，栅极绝缘膜和栅极电极的多个薄膜晶体管的电子器件，设置在基板之间的器件分离区域 多个薄膜晶体管和半导体区域由相同的金属氧化物层构成，半导体区域的电阻形成为低于器件分离区域的电阻。

公开(公告)号：US06737123B2

公开(公告)日：2004-05-18

申请号：US10166759

申请日：2002-06-12

申请人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Tadashi Sawayama ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Hiroyuki Ozaki ,  Yoshinori Sugiura

发明人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Tadashi Sawayama ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Hiroyuki Ozaki ,  Yoshinori Sugiura

IPC分类号： C23C16505

CPC分类号： C23C16/517 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A silicon-based film is formed superimposing a direct-current potential on the high-frequency power to set the potential of the high-frequency power feed section to a potential which is lower by V1 than the ground potential; the V1 satisfying |V2|≦|V1|≦50×|V2|, where V2 is the potential difference from the ground potential, produced in the electrode in the state the plasma has taken place under the same conditions except that the direct-current potential is not superposed on the high-frequency power and the electrode is brought into a non-grounded state. This can provide a silicon-based film having superior characteristics at a high film formation rate, and a semiconductor device making use of this silicon-based film, having superior adherence, environmental resistance, and can enjoy a short tact time at the time of manufacture.

摘要翻译： 形成在高频电力上叠加直流电位的硅基膜，将高频供电部的电位设定为比地电位低V1的电位; 满足| V2 | <= | V1 | <= 50x | V2 |的V1，其中V2是在等离子体在相同条件下发生的状态下在电极中产生的与地电位的电位差， 电流电势不叠加在高频电源上，并且电极进入非接地状态。 这可以提供具有高成膜速度的优异特性的硅基膜和使用该硅基膜的半导体器件，具有优异的附着力，耐环境性，并且可以在制造时享受短的时间 。

公开(公告)号：US5563425A

公开(公告)日：1996-10-08

申请号：US149749

申请日：1993-11-10

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Ryo Hayashi ,  Masahiko Tonogaki

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Ryo Hayashi ,  Masahiko Tonogaki

IPC分类号： H01L31/04 ,  H01L31/052 ,  H01L31/075 ,  H01L31/20 ,  H01L29/04 ,  H01L31/36 ,  H01L31/376

CPC分类号： H01L31/065 ,  H01L31/056 ,  H01L31/075 ,  H01L31/204 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： An object of the present invention is to provide a photoelectrical conversion device in which recombination of carriers excited by light is prevented and the open voltage and the carrier range of positive holes are improved and to provide a generating system using the photoelectrical conversion device. The photoelectrical conversion device includes a p-layer, an i-layer, and an n-layer, wherein the photoelectrical conversion device being formed by stacking the p-layer, the i-layer and the n-layer each of which is made of non-single-crystal silicon semiconductor, the i-layer contains germanium atoms, the band gap of the i-layer is smoothly changed in a direction of the thickness of the i-layer, the minimum value of the band gap is positioned adjacent to the p-layer from the central position of the i-layer and both of a valence control agent to serve as a donor and another valence control agent to serve as an acceptor are doped into the i-layer. Further, at least either of the p-layer or the n-layer is formed into a stacked structure consisting of a layer mainly composed of group III elements of the periodic table and/or group V elements of the same and a layer containing the valence control agent and mainly composed of silicon atoms.

摘要翻译： 本发明的目的是提供一种光电转换装置，其中防止由光激发的载流子的复合，并且改善了空穴的开路电压和载流子范围，并提供了使用光电转换装置的发电系统。 所述光电转换装置包括p层，i层和n层，其中所述光电转换装置通过层叠p层，i层和n层而形成，所述p层，i层和n层由 非单晶硅半导体，i层含有锗原子，i层的带隙在i层的厚度方向上平滑地变化，带隙的最小值位于 i层的中心位置的p层和作为供体的价电子控制剂以及用作受体的另一价电子控制剂都掺杂到i层中。 此外，p层或n层中的至少任一层形成为由主要由周期表的III族元素和/或其V族元素组成的层和包含该价电子层的层 控制剂主要由硅原子组成。

公开(公告)号：US07851792B2

公开(公告)日：2010-12-14

申请号：US12089907

申请日：2006-11-01

申请人： Toshiaki Aiba ,  Masafumi Sano ,  Nobuyuki Kaji

发明人： Toshiaki Aiba ,  Masafumi Sano ,  Nobuyuki Kaji

IPC分类号： H01L29/786

CPC分类号： H01L29/04 ,  H01L29/7869 ,  H01L29/78696

摘要： Provided is a field-effect transistor including an active layer and a gate insulating film, wherein the active layer includes an amorphous oxide layer containing an amorphous region and a crystalline region, and the crystalline region is in the vicinity of or in contact with an interface between the amorphous oxide layer and the gate insulating film.

摘要翻译： 提供了一种包括有源层和栅极绝缘膜的场效应晶体管，其中有源层包括含有非晶区域和结晶区域的非晶氧化物层，并且晶体区域在界面附近或与界面接触 在非晶氧化物层和栅极绝缘膜之间。

公开(公告)号：US07829444B2

公开(公告)日：2010-11-09

申请号：US11269641

申请日：2005-11-09

申请人： Hisato Yabuta ,  Masafumi Sano ,  Tatsuya Iwasaki ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

发明人： Hisato Yabuta ,  Masafumi Sano ,  Tatsuya Iwasaki ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L21/20

CPC分类号： H01L29/78618 ,  H01L29/66969 ,  H01L29/78693

摘要： Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.

摘要翻译： 提供一种用于制造场效应晶体管的新颖方法。 在基板上形成无定形氧化物层之前，在臭氧气氛中将紫外线照射到基板表面上，将等离子体照射到基板表面上，或者通过含有过氧化氢的化学溶液清洁基板表面。

公开(公告)号：US20070184191A1

公开(公告)日：2007-08-09

申请号：US11627066

申请日：2007-01-25

申请人： Yasuyoshi Takai ,  Masafumi Sano ,  Keishi Saito

发明人： Yasuyoshi Takai ,  Masafumi Sano ,  Keishi Saito

IPC分类号： C23C16/00

CPC分类号： C23C16/24 ,  C23C16/45523 ,  C23C16/545 ,  Y02E10/545 ,  Y02E10/548

摘要： Provided is a deposited film containing microcrystalline silicon by plasma CVD, which includes changing at least one of conditions selected from a high frequency power density, a bias voltage with respect to an interelectrode distance, a bias current with respect to an electrode area, a high frequency power with respect to a source gas flow rate, a ratio of a diluting gas flow rate to a source gas flow rate, a substrate temperature, a pressure, and an interelectrode distance, between conditions for forming a deposited film of a microcrystalline region and conditions for forming a deposited film of an amorphous region; and forming a deposited film under conditions within a predetermined range in the vicinity of boundary conditions under which the crystal system of the deposited film substantially changes between a amorphous state and a microcrystalline state.

摘要翻译： 提供了通过等离子体CVD包含微晶硅的沉积膜，其包括改变选自高频功率密度，相对于电极间距离的偏置电压，相对于电极面积的偏置电流，高电平 用于形成微晶区域的沉积膜的条件和相对于源气体流量的稀释气体流量的比率，稀释气体流量与源气体流量的比率，基板温度，压力和电极间距离 形成非晶区沉积膜的条件; 以及在沉积膜的晶体系统在非晶态和微晶态之间基本上变化的边界条件附近的预定范围内的条件下形成沉积膜。

公开(公告)号：US20060113539A1

公开(公告)日：2006-06-01

申请号：US11269647

申请日：2005-11-09

申请人： Masafumi Sano ,  Katsumi Nakagawa ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

发明人： Masafumi Sano ,  Katsumi Nakagawa ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L29/04 ,  H01L27/12 ,  H01L31/0376

CPC分类号： H01L29/51 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/7869

摘要： A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10−18/cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.

摘要翻译： 提供了一种采用无定形氧化物的新型场效应晶体管。 在本发明的一个实施例中，晶体管包括含有浓度小于1×10 -6 / cm 3的电子载流子的无定形氧化物层，栅极绝缘层 包括与非晶氧化物接触的第一层和不同于第一层的第二层。

公开(公告)号：US07001460B2

公开(公告)日：2006-02-21

申请号：US10625672

申请日：2003-07-24

申请人： Keishi Saito ,  Masafumi Sano

发明人： Keishi Saito ,  Masafumi Sano

IPC分类号： C30B25/14

CPC分类号： H01L31/076 ,  H01L31/03685 ,  H01L31/03687 ,  H01L31/056 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising microcrystalline semiconductor, microcrystal grains of different grain diameters are provided as a mixture to form a semiconductor layer. Thereby, discontinuity of a semiconductor junction is lessened to thereby improve the characteristics, durability, and heat resisting properties of a semiconductor element. Distortion in a semiconductor layer is also reduced.

摘要翻译： 在包含微晶半导体的半导体元件中，在微晶晶粒内提供半导体结。 此外，在包含微晶半导体的半导体元件中，作为混合物提供不同晶粒直径的微晶粒以形成半导体层。 因此，半导体结的不连续性减小，从而提高半导体元件的特性，耐久性和耐热性。 半导体层的失真也减少了。