公开(公告)号：US09851455B2

公开(公告)日：2017-12-26

申请号：US14688008

申请日：2015-04-16

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Sergei Ivanovich Dolinsky ,  Jianjun Guo ,  David Leo McDaniel ,  Ravindra Mohan Manjeshwar ,  Geng Fu

IPC: G01T1/24

CPC classification number: G01T1/247

Abstract: Embodiments of a solid state photomultiplier are provided herein. In some embodiments, a solid state photomultiplier may include a plurality of pixels, wherein each pixel of the plurality of pixels comprises a plurality of subpixels; and a first set of buffer amplifiers, wherein each buffer amplifier of the first set of buffer amplifiers is respectively coupled to a subpixel of the plurality of subpixels.

公开(公告)号：US09754981B2

公开(公告)日：2017-09-05

申请号：US15077006

申请日：2016-03-22

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Jianjun Guo ,  Sergei Ivanovich Dolinsky ,  Jonathan David Short

IPC: H01L27/146 ,  H01L31/107 ,  H01L31/0352

CPC classification number: H01L27/14612 ,  H01L27/14663 ,  H01L31/035272

Abstract: Embodiments of a solid state photomultiplier are provided herein. In some embodiments, a solid state photomultiplier may include an epitaxial layer, a high voltage region formed in the epitaxial layer, a low voltage region formed in the epitaxial layer, and an intermediate region disposed between the high voltage region and low voltage region, wherein the high voltage region is electrically coupled to the low voltage region via the intermediate region, and wherein at least a portion of the epitaxial layer is disposed between the high voltage region and intermediate region and between the low voltage region and the intermediate region.

公开(公告)号：US09568620B2

公开(公告)日：2017-02-14

申请号：US14851518

申请日：2015-09-11

Applicant: General Electric Company

Inventor： JianJun Guo ,  Sergei Ivanovich Dolinsky ,  David Leo McDaniel ,  Jonathan David Short

IPC: G01T1/24 ,  H01L31/107 ,  H04N5/32

CPC classification number: G01T1/248 ,  G01T1/247 ,  G01T1/249 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14663 ,  H01L31/107 ,  H04N5/32

Abstract: Embodiments of a solid state photomultiplier are provided herein. In some embodiments, a photosensor may include a sensing element; and readout electronics, wherein the sensing element is AC coupled to the readout electronics. In some embodiments, a solid state photomultipler may include a microcell having; a sensing element; and readout electronics, wherein the sensing element is AC coupled to the readout electronics.

Abstract translation: 本文提供了固态光电倍增管的实施例。 在一些实施例中，光电传感器可以包括感测元件; 和读出电子器件，其中感测元件被AC耦合到读出电子器件。 在一些实施例中，固态光电倍增管可以包括具有： 传感元件; 和读出电子器件，其中感测元件被AC耦合到读出电子器件。

公开(公告)号：US09541448B2

公开(公告)日：2017-01-10

申请号：US14615806

申请日：2015-02-06

Applicant: General Electric Company

Inventor： Jianjun Guo ,  Sergei Ivanovich Dolinsky

IPC: G01J1/42 ,  G01J1/44

CPC classification number: G01J1/4228 ,  G01J1/44 ,  G01J2001/4466 ,  G01T1/248 ,  G01T1/2985

Abstract: A silicon photomultiplier array of microcells including a photon avalanche diode and an electronic circuit configured to provide a first one-shot pulse and a second one-shot pulse based on a detected current flowing through the photon avalanche diode. The microcells arranged in rows and columns with each microcell of a respective row connected to a respective row data bus connected to a row counter configured to count one or more first one-shot pulses for a predetermined time period, a pixel adder configured to sum the count, and a digital-to-analog converter connected to the pixel adder to convert sum to an analog signal representative of an energy readout. A timing logic circuit configured to provide a validation signal to a counter control logic circuit, and the counter control logic circuit configured to provide one of a start signal, a stop signal, and a reset signal to the row counter.

Abstract translation: 包括光子雪崩二极管和电子电路的微电池的硅光电倍增管阵列，被配置为基于流过光子雪崩二极管的检测电流提供第一单触发脉冲和第二单触发脉冲。 微电池以行和列排列，每行的每个微电池连接到连接到配置成在一个预定时间段内对一个或多个第一单触发脉冲进行计数的行计数器的相应行数据总线;像素加法器， 计数器和连接到像素加法器的数模转换器将和转换为表示能量读出的模拟信号。 定时逻辑电路，被配置为向计数器控制逻辑电路提供有效信号，并且所述计数器控制逻辑电路经配置以向所述行计数器提供起始信号，停止信号和复位信号中的一个。

公开(公告)号：US20160182902A1

公开(公告)日：2016-06-23

申请号：US14574836

申请日：2014-12-18

Applicant: General Electric Company

Inventor： Jianjun Guo ,  Sergei Ivanovich Dolinsky

IPC: H04N17/00 ,  H04N5/341

CPC classification number: H04N17/002 ,  G01T1/2018 ,  G01T1/208 ,  G01T1/248 ,  H04N5/341

Abstract: A silicon photomultiplier includes a plurality of microcells providing a pulse output in response to an incident radiation, each microcell including circuitry configured to enable and disable the pulse output. Each microcell includes a cell disable switch. The control logic circuit controls the cell disable switch and a self-test circuit. A microcell's pulse output is disabled when the cell disable switch is in a first state. A method for self-test calibration of microcells includes providing a test enable signal to the microcells, integrating dark current for a predetermined time period, comparing the integrated dark current to a predetermined threshold level, and providing a signal if above the predetermined threshold level.

Abstract translation: 硅光电倍增管包括响应于入射辐射提供脉冲输出的多个微单元，每个微单元包括被配置为启用和禁用脉冲输出的电路。 每个微单元包括单元禁用开关。 控制逻辑电路控制单元禁用开关和自检电路。 当单元禁用开关处于第一状态时，微单元的脉冲输出被禁止。 一种用于微小区的自检校准的方法包括向微小区提供测试使能信号，将暗电流集成预定时间段，将积分暗电流与预定阈值电平进行比较，以及如果高于预定阈值电平则提供信号。

公开(公告)号：US09164144B2

公开(公告)日：2015-10-20

申请号：US13727959

申请日：2012-12-27

Applicant: General Electric Company

Inventor： Sergei Ivanovich Dolinsky

IPC: G01R15/24 ,  G01R31/28 ,  G01T1/20 ,  G01T1/208 ,  G01J11/00 ,  G01J1/42

CPC classification number: G01R31/2837 ,  G01J1/08 ,  G01J1/4228 ,  G01J11/00 ,  G01T1/2018 ,  G01T1/208

Abstract: Exemplary embodiments are directed to characterizing a solid state photomultiplier (SSPM). The SSPM can be exposed to a light pulse that triggers a plurality of microcells of the SSPM and an output signal of the SSPM generated in response to the light pulse can be processed. The output signal of the SSPM can be proportional to a gain of the SSPM and a quantity of microcells in the SSPM and a value of an electrical parameter of the SSPM can be determined based on a relationship between the output signal of the SSPM and an over voltage applied to the SSPM.

Abstract translation: 示例性实施例涉及表征固态光电倍增管（SSPM）。 SSPM可以暴露于触发SSPM的多个微单元的光脉冲，并且可以处理响应于光脉冲而产生的SSPM的输出信号。 SSPM的输出信号可以与SSPM的增益成比例，并且SSPM中的微小区的数量和SSPM的电参数的值可以基于SSPM的输出信号与上一个之间的关系来确定 施加到SSPM的电压。

公开(公告)号：US20150144797A1

公开(公告)日：2015-05-28

申请号：US14088124

申请日：2013-11-22

Applicant: General Electric Company

Inventor： Sergei Ivanovich Dolinsky ,  Jianjun Guo

IPC: G01T1/24 ,  H01L31/102 ,  G01J1/44 ,  H01L31/115 ,  G01T1/20 ,  G01T1/208

CPC classification number: G01T1/248 ,  G01J1/44 ,  G01J2001/4466 ,  G01T1/2006 ,  G01T1/208 ,  G01T1/247 ,  G01T1/249 ,  H01L31/102 ,  H01L31/115

Abstract: Photomultipliers are disclosed which comprise circuitry for detecting photo electric events and generating short digital pulses in response. In one embodiment, the photomultipliers comprise solid state photomultipliers having an array of microcells. The microcells, in one embodiment, in response to incident photons, generate a digital pulse signal having a duration of about 2 ns or less.

Abstract translation: 公开了包括用于检测光电事件并响应地产生短数字脉冲的电路的光电倍增管。 在一个实施例中，光电倍增管包括具有微小区阵列的固态光电倍增管。 在一个实施例中，响应于入射光子的微单元产生具有约2ns或更短持续时间的数字脉冲信号。

公开(公告)号：US08886697B2

公开(公告)日：2014-11-11

申请号：US13729761

申请日：2012-12-28

Applicant: General Electric Company

Inventor： Sergei Ivanovich Dolinsky

IPC: G06E3/00 ,  H01L27/144

CPC classification number: H01L27/144 ,  G01T1/2018 ,  G01T1/208

Abstract: Exemplary embodiments are directed to shaping a readout pulse from a solid state photomultiplier (SSPM). A readout pulse can be received from the SSPM at an input of a buffer amplifier. The readout pulse can have a discharge portion with a discharge rate and a recharge portion with a recharge rate. A magnitude of the readout pulse increasing for the discharge portion and decreasing for the recharge portion. A frequency dependent input impedance circuit can be employed in electrical communication with the input of the buffer amplifier to shape the discharge portion of the readout pulse.

Abstract translation: 示例性实施例涉及从固态光电倍增管（SSPM）形成读出脉冲。 可以在缓冲放大器的输入处从SSPM接收读出脉冲。 读出脉冲可以具有放电速率的放电部分和具有再充电速率的充电部分。 读出脉冲的大小对于放电部分而增加，并且对于再充电部分而言减小。 可以采用与频率相关的输入阻抗电路与缓冲放大器的输入端电连接，以形成读出脉冲的放电部分。

公开(公告)号：US20140224963A1

公开(公告)日：2014-08-14

申请号：US13764960

申请日：2013-02-12

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Jianjun Guo ,  Sergei Ivanovich Dolinsky ,  Changlyong Kim ,  James Lindgren Malaney ,  David Leo McDaniel ,  William Peterson

IPC: G01T1/29

CPC classification number: G01T1/2985 ,  A61B6/037 ,  G01R33/481 ,  G01T1/1603 ,  G01T1/1647

Abstract: A multichannel application specific integrated circuit (ASIC) for interfacing with an array of photodetectors in a positron emission tomography (PET) imaging system includes a front end circuit configured to be coupled to the photodetectors and to receive discrete analog signals therefrom. The ASIC further includes a time discriminating circuit operably coupled to the front end circuit and configured to generate a hit signal based on a combination of the discrete analog signals, and an energy discriminating circuit operably coupled to the front end circuit and configured to generate a summed energy output signal based on each of the discrete analog signals and summed row and column output signals based on each of the discrete analog signals. The summed energy output signal represents an energy level of the detected radiation in the array of photodetectors, and the summed row and column output signals represent a location of the detected radiation.

Abstract translation: 用于与正电子发射断层摄影（PET）成像系统中的光电检测器阵列接口的多通道专用集成电路（ASIC）包括被配置为耦合到光电检测器并从其接收分立的模拟信号的前端电路。 ASIC还包括时间鉴别电路，其可操作地耦合到前端电路并且被配置为基于离散模拟信号的组合产生命中信号，以及能量鉴别电路，其可操作地耦合到前端电路并且被配置为生成相加的 基于每个离散模拟信号的能量输出信号和基于每个离散模拟信号的相加的行和列输出信号。 相加的能量输出信号表示光电检测器阵列中检测到的辐射的能级，并且相加的行和列输出信号表示检测到的辐射的位置。