公开(公告)号：US20140017885A1

公开(公告)日：2014-01-16

申请号：US13916006

申请日：2013-06-12

Applicant: Electronics and Telecommunications Research Institute

Inventor： Hyung Sup YOON ,  Byoung-gue Min ,  Jong-Won Lim ,  Ho Kyun Ahn ,  Jong Min Lee ,  Seong-il Kim ,  Jae Kyoung Mun ,  Eun Soo Nam

IPC: H01L21/28

CPC classification number: H01L21/28008 ,  H01L21/28587 ,  H01L29/42316 ,  H01L29/66863

Abstract: Disclosed is a method of manufacturing a field effect type compound semiconductor device in which leakage current of a device is decreased and breakdown voltage is enhanced. The method of manufacturing a field effect type compound semiconductor device includes: stacking an active layer and an ohmic layer on a substrate and forming a first oxide layer on the ohmic layer; forming a mesa region in predetermined regions of the first oxide layer, the ohmic layer, and the active layer; planarizing the mesa region after forming a nitride layer by evaporating a nitride on the mesa region; forming an ohmic electrode on the first oxide layer; forming a minute gate resist pattern after forming a second oxide layer on a semiconductor substrate in which the ohmic electrode is formed and forming a minute gate pattern having a under-cut shaped profile by dry-etching the first oxide layer, the nitride layer, and the second oxide layer; forming a gate recess region by forming a head pattern of a gamma gate electrode on the semiconductor substrate; and forming the gamma gate electrode by evaporating refractory metal on the semiconductor substrate in which the gate recess region is formed.

Abstract translation: 公开了一种制造场效应型化合物半导体器件的方法，其中器件的漏电流降低并且击穿电压增强。 制造场效应型化合物半导体器件的方法包括：在衬底上堆叠有源层和欧姆层，并在欧姆层上形成第一氧化物层; 在所述第一氧化物层，所述欧姆层和所述有源层的预定区域中形成台面区域; 通过在台面区域上蒸发氮化物，在形成氮化物层之后使台面区域平坦化; 在所述第一氧化物层上形成欧姆电极; 在形成欧姆电极的半导体衬底上形成第二氧化物层之后形成微小栅极抗蚀剂图案，并通过干蚀刻第一氧化物层，氮化物层和形成具有下切形状轮廓的微小栅极图案 第二氧化物层; 通过在所述半导体衬底上形成伽马栅电极的头部图形来形成栅极凹部区域; 以及通过在形成有所述栅极凹部的所述半导体衬底上蒸发难熔金属而形成所述γ栅电极。

公开(公告)号：US20130169365A1

公开(公告)日：2013-07-04

申请号：US13670016

申请日：2012-11-06

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sang-Heung LEE ,  Seong-Il Kim ,  Dong Min Kang ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Chull Won Ju ,  Jae Kyoung Mun ,  Eun Soo Nam

IPC: H03G3/00

CPC classification number: H03G1/0082 ,  H03G1/0088 ,  H03G3/3084

Abstract: Disclosed is an automatic gain control feedback amplifier that can arbitrarily control a gain even when a difference in input signal is large. The automatic gain control feedback amplifier includes: an amplification circuit unit configured to amplify voltage input from an input terminal and output the amplified voltage to an output terminal; a feedback circuit unit connected between the input terminal and the output terminal and including a feedback resistor unit of which a total resistance value is determined by one or more control signals and a feedback transistor connected to the feedback resistor unit in parallel; and a bias circuit unit configured to supply predetermined bias voltage to the feedback transistor.

Abstract translation: 公开了一种自动增益控制反馈放大器，即使当输入信号的差异大时也可以任意地控制增益。 自动增益控制反馈放大器包括：放大电路单元，被配置为放大从输入端输入的电压，并将放大的电压输出到输出端; 连接在输入端子和输出端子之间的反馈电路单元，包括反馈电阻器单元，其总电阻值由一个或多个控制信号确定，反馈晶体管并联连接到反馈电阻器单元; 以及偏置电路单元，被配置为向所述反馈晶体管提供预定的偏置电压。