公开(公告)号：US20140017885A1

公开(公告)日：2014-01-16

申请号：US13916006

申请日：2013-06-12

Applicant: Electronics and Telecommunications Research Institute

Inventor： Hyung Sup YOON ,  Byoung-gue Min ,  Jong-Won Lim ,  Ho Kyun Ahn ,  Jong Min Lee ,  Seong-il Kim ,  Jae Kyoung Mun ,  Eun Soo Nam

IPC: H01L21/28

CPC classification number: H01L21/28008 ,  H01L21/28587 ,  H01L29/42316 ,  H01L29/66863

Abstract: Disclosed is a method of manufacturing a field effect type compound semiconductor device in which leakage current of a device is decreased and breakdown voltage is enhanced. The method of manufacturing a field effect type compound semiconductor device includes: stacking an active layer and an ohmic layer on a substrate and forming a first oxide layer on the ohmic layer; forming a mesa region in predetermined regions of the first oxide layer, the ohmic layer, and the active layer; planarizing the mesa region after forming a nitride layer by evaporating a nitride on the mesa region; forming an ohmic electrode on the first oxide layer; forming a minute gate resist pattern after forming a second oxide layer on a semiconductor substrate in which the ohmic electrode is formed and forming a minute gate pattern having a under-cut shaped profile by dry-etching the first oxide layer, the nitride layer, and the second oxide layer; forming a gate recess region by forming a head pattern of a gamma gate electrode on the semiconductor substrate; and forming the gamma gate electrode by evaporating refractory metal on the semiconductor substrate in which the gate recess region is formed.

Abstract translation: 公开了一种制造场效应型化合物半导体器件的方法，其中器件的漏电流降低并且击穿电压增强。 制造场效应型化合物半导体器件的方法包括：在衬底上堆叠有源层和欧姆层，并在欧姆层上形成第一氧化物层; 在所述第一氧化物层，所述欧姆层和所述有源层的预定区域中形成台面区域; 通过在台面区域上蒸发氮化物，在形成氮化物层之后使台面区域平坦化; 在所述第一氧化物层上形成欧姆电极; 在形成欧姆电极的半导体衬底上形成第二氧化物层之后形成微小栅极抗蚀剂图案，并通过干蚀刻第一氧化物层，氮化物层和形成具有下切形状轮廓的微小栅极图案 第二氧化物层; 通过在所述半导体衬底上形成伽马栅电极的头部图形来形成栅极凹部区域; 以及通过在形成有所述栅极凹部的所述半导体衬底上蒸发难熔金属而形成所述γ栅电极。