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公开(公告)号：US20220093893A1
公开(公告)日：2022-03-24
申请号：US17336523
申请日：2021-06-02
Inventor： Yang Zhang , Ning Liu , Bin Zhou , Leilei Cheng , Liangchen Yan , Jun Liu , Qinghe Wang , Tao Sun , Zhiwen Luo
Abstract: A method for manufacturing a display panel includes: sequentially forming a conductive pattern, a light-emitting layer and a cathode layer on a substrate. The conductive pattern is formed by a one-time patterning process, and includes an auxiliary electrode layer. In a direction parallel to the substrate, both the first protective electrode and the second protective electrode in the auxiliary electrode layer extend over the metal electrode, a second orthographic projection of the second protective electrode on the substrate is within a first orthographic projection of the first protective electrode on the substrate, and an outer boundary of the second orthographic projection is staggered from an outer boundary of the first orthographic projection. The cathode layer is in contact with the first protective electrode and a sidewall of the metal electrode.
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公开(公告)号：US11257955B2
公开(公告)日：2022-02-22
申请号：US16026307
申请日：2018-07-03
Inventor： Qinghe Wang , Luke Ding , Leilei Cheng , Jun Bao , Tongshang Su , Dongfang Wang , Guangcai Yuan
IPC: H01L29/786 , H01L27/12 , H01L29/66 , H01L21/02 , H01L29/24 , H01L29/45 , H01L29/49 , H01L21/027 , H01L29/16 , H01L51/00 , H01L51/10
Abstract: The disclosure provides a thin film transistor, an array substrate, and a method for fabricating the same. An embodiment of the disclosure provides a method for fabricating a thin film transistor, the method including: forming a gate, a gate insulation layer, and an active layer above an underlying substrate successively; forming a patterned hydrophobic layer above the active layer, wherein the hydrophobic layer includes first pattern components, and orthographic projections of the first pattern components onto the underlying substrate overlap with a orthographic projection of a channel area at the active layer onto the underlying substrate; and forming a source and a drain above the hydrophobic layer, wherein the source and the drain are located respectively on two sides of a channel area, and in contact with the active layer.
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公开(公告)号：US11229877B2
公开(公告)日：2022-01-25
申请号：US16611417
申请日：2019-01-22
Inventor： Guangyao Li , Guangcai Yuan , Dongfang Wang , Jun Wang , Qinghe Wang , Wei Li , Leilei Cheng
Abstract: The present disclosure provides a gas screening film including at least one gas screening element, each of the at least one gas screening element includes a transistor including a gate, an insulation spacing layer, a first electrode, a semiconductor nanosheet separation layer and a second electrode, and the insulation spacing layer is disposed between the gate and the semiconductor nanosheet separation layer. The present disclosure further provides a manufacturing method of the gas screening film and a face mask. The gas screening film can screen and separate various different gases as necessary.
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公开(公告)号：US11018166B2
公开(公告)日：2021-05-25
申请号：US15521408
申请日：2016-02-16
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Leilei Cheng , Rui Peng , Dongfang Wang
IPC: H01L27/12 , H01L29/417 , H01L29/786
Abstract: The present disclosure provides a display substrate and a manufacturing method thereof, and a display apparatus, the manufacturing method comprises: forming a base; forming a thin film transistor on the base, the thin film transistor comprises a gate, a source, a drain and an active layer, a first insulating layer is formed on the base, and a second insulating layer is formed between the gate and the active layer, the active layer is formed in the first insulating layer; forming a third insulating layer above the thin film transistor; forming a pixel electrode above the third insulating layer; forming a fourth insulating layer above the pixel electrode, a material of at least one of the base, the first insulating layer, the second insulating layer, the third insulating layer and the fourth insulating layer includes an organic material, and a material of at least one of them includes an inorganic material.
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公开(公告)号：US10727451B2
公开(公告)日：2020-07-28
申请号：US16426468
申请日：2019-05-30
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Dongfang Wang , Tongshang Su , Leilei Cheng
IPC: H01L33/42 , H01L51/56 , H01L27/32 , H01L51/52 , H01L27/146
Abstract: A display substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of the display substrate includes: forming light emitting units of at least two colors on a base substrate, which includes: forming a first electrode, a light emitting layer and a second electrode on the base substrate. An electrode sub-layer and a transparent structure are formed on the base substrate to form the first electrode. A first transparent conductive layer, a transparent etching barrier layer and a second transparent conductive layer are formed on a side of the electrode sub-layer away from the base substrate to form the transparent structure of the first color light emitting unit. An etching rate of the first transparent conductive layer and an etching rate of the second transparent conductive layer are substantially identical, and thicknesses of transparent structures in different light emitting units are different.
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Patent Agency Ranking
公开(公告)号：US10707286B2
公开(公告)日：2020-07-07
申请号：US16417031
申请日：2019-05-20
Inventor： Qinghe Wang , Dongfang Wang , Tongshang Su , Rui Peng , Leilei Cheng , Yang Zhang , Jun Wang , Guangyao Li , Liangchen Yan , Guangcai Yuan
Abstract: An OLED device and a method of preparing the same are provided, the OLED device including: a substrate; a first source electrode on the substrate, the first source electrode having a first side surface; a first insulating layer on the first source electrode, the first insulating layer having a second side surface intersecting with an upper surface of the first source electrode and the first side surface of the first source electrode, with at least one of an angle between the first side surface and the upper surface of the substrate and an angle between the second side surface and the upper surface of the substrate being an acute angle; an active layer on the substrate, the active layer covering the first side surface and the second side surface; a gate insulating layer on the active layer; an anode on the gate insulating layer; a light emitting functional layer on the anode; and a cathode on the light emitting functional layer, the cathode including a first drain region covering the first insulating layer and being in contact with the active layer.
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37.发明申请公开(公告)号：US20190131143A1
公开(公告)日：2019-05-02
申请号：US15983453
申请日：2018-05-18
Inventor： Tongshang Su , Dongfang Wang , Jun Liu , Leilei Cheng , Wei Li , Qinghe Wang , Yang Zhang , Guangcai Yuan
IPC: H01L21/385 , H01L29/786 , H01L29/66
Abstract: In an embodiment, there is provided a method of manufacturing a thin-film transistor. The method includes steps of: forming a gate, a gate insulator layer and an active layer on a base substrate, wherein, the gate and the active layer are provided at upper and lower sides of the gate insulator layer, respectively, and the active layer contains impurity ions therein; and, while implementing an annealing on the active layer, applying a voltage between the active layer and the gate to generate an electrical field therebetween, a direction of the electrical field being configured such that the impurity ions move from the active layer into the gate insulator layer. Meanwhile, there are also provided a thin-film transistor, an array substrate and a display apparatus.
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公开(公告)号：US20190081178A1
公开(公告)日：2019-03-14
申请号：US16026307
申请日：2018-07-03
Inventor： Qinghe Wang , Luke Ding , Leilei Cheng , Jun Bao , Tongshang Su , Dongfang Wang , Guangcai Yuan
IPC: H01L29/786 , H01L27/12 , H01L29/66 , H01L21/027 , H01L21/02 , H01L29/24 , H01L29/45 , H01L29/49
Abstract: The disclosure provides a thin film transistor, an array substrate, and a method for fabricating the same. An embodiment of the disclosure provides a method for fabricating a thin film transistor, the method including: forming a gate, a gate insulation layer, and an active layer above an underlying substrate successively; forming a patterned hydrophobic layer above the active layer, wherein the hydrophobic layer includes first pattern components, and orthographic projections of the first pattern components onto the underlying substrate overlap with a orthographic projection of a channel area at the active layer onto the underlying substrate; and forming a source and a drain above the hydrophobic layer, wherein the source and the drain are located respectively on two sides of a channel area, and in contact with the active layer.
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公开(公告)号：US11559592B2
公开(公告)日：2023-01-24
申请号：US16442860
申请日：2019-06-17
Inventor： Guangyao Li , Luke Ding , Leilei Cheng , Yingbin Hu , Jingang Fang , Ning Liu , Qinghe Wang , Dongfang Wang , Liangchen Yan
IPC: A61L2/03 , C01B32/182
Abstract: A sterilization structure, a sterilization board, and a display device are disclosed. The sterilization structure includes an active layer, wherein, one surface of the active layer has an exposed region, and a material of the active layer includes a laser-induced graphene material.
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公开(公告)号：US11367792B2
公开(公告)日：2022-06-21
申请号：US16971085
申请日：2019-11-01
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Heekyu Kim , Yuankui Ding , Leilei Cheng , Yingbin Hu , Wei Li , Guangyao Li , Qinghe Wang
IPC: H01L21/00 , H01L27/00 , H01L29/00 , H01L29/786 , H01L27/12 , H01L29/24 , H01L21/02 , H01L29/66 , H01L27/32
Abstract: The present disclosure is related to a thin film transistor. The thin film transistor may include an active layer; a gate insulating layer on the active layer; and a gate and a plurality of metal films on the gate insulating layer. The plurality of metal films may be spaced apart from the gate, and insulated from the gate and the active layer.
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