LIGHT-EMITTING SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND LIGHT-EMITTING APPARATUS

    公开(公告)号:US20240164179A1

    公开(公告)日:2024-05-16

    申请号:US17918630

    申请日:2021-11-23

    CPC classification number: H10K59/80522 H10K59/1201

    Abstract: A light-emitting substrate includes: a substrate; and at least one coupling portion and at least one auxiliary cathode pattern disposed on the substrate. Each auxiliary cathode region is provided with a coupling portion and an auxiliary cathode pattern coupled to the coupling portion. The auxiliary cathode pattern includes at least one disconnection portion, and each disconnection portion includes first, second and third conductive pattern layers. An orthographic projection of an edge of the second conductive pattern layer on the substrate is located within orthographic projections of edges of the third and first conductive pattern layers on the substrate. A total perimeter of at least one orthographic projection, on the substrate, of at least one edge of at least one third conductive pattern layer in the at least one disconnection portion is greater than a perimeter of an orthographic projection of an edge of the auxiliary cathode region on the substrate.

    DISPLAY SUBSTRATE AND DISPLAY DEVICE
    36.
    发明公开

    公开(公告)号:US20240138211A1

    公开(公告)日:2024-04-25

    申请号:US17926747

    申请日:2021-11-29

    CPC classification number: H10K59/131

    Abstract: A display substrate and a display device are provided. The display substrate includes: a base substrate and a plurality of sub-pixels arranged on the base substrate, the plurality of the sub-pixels are arranged in an array, the sub-pixel includes: a reference signal line and a second scan line; and a sub-pixel driving circuit including a driving transistor and a second transistor, a gate electrode of the second transistor is coupled to the second scan line, a first electrode of the second transistor and the reference signal line form an integrated structure, a second electrode of the second transistor is coupled to a gate electrode of the driving transistor.

    ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE

    公开(公告)号:US20210367017A1

    公开(公告)日:2021-11-25

    申请号:US17241703

    申请日:2021-04-27

    Abstract: An array substrate, a method for manufacturing the array substrate and a display device are provided. The array substrate includes: a base substrate, and a thin film transistor, a storage capacitor, and a lapping pattern for connecting the thin film transistor to the storage capacitor arranged on the base substrate; wherein the thin film transistor includes a semiconductor layer, a gate insulation layer, a gate electrode, an interlayer insulation layer, a source electrode and a drain electrode arranged sequentially in that order; the interlayer insulation layer includes at least two inorganic insulation layers and at least one organic insulation layer laminated one on another, and both a layer proximate to the base substrate and a layer distal to the base substrate in the interlayer insulation layer are the inorganic insulation layers.

    ARRAY SUBSTRATE AND FABRICATING METHOD THEREOF, DISPLAY PANEL AND DISPLAY DEVICE

    公开(公告)号:US20200035716A1

    公开(公告)日:2020-01-30

    申请号:US16396726

    申请日:2019-04-28

    Abstract: The present disclosure is in the field of display technologies, and provides an array substrate including an IGZO film layer, a gate layer, and a gate insulating layer. The gate layer is provided with broken lines at a position thereof overlapping the IGZO film layer to form a first gate line and a second gate line. The gate insulating layer is disposed between the IGZO film layer and the gate layer, and is provided with at least two through holes thereon, in which the first gate line is connected with the IGZO film layer through one of the through holes, and the second gate line is connected with the IGZO film layer through another through hole, thus, connecting the IGZO film layer in series into the gate layer.

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