公开(公告)号：US20220163834A1

公开(公告)日：2022-05-26

申请号：US17100400

申请日：2020-11-20

Applicant: Applied Materials, Inc.

Inventor： Lan Yu ,  Benjamin D. Briggs ,  Tyler Sherwood ,  Zihao Yang

IPC: G02F1/1339 ,  H01L21/66

Abstract: Processing methods may be performed to form a pixel isolation structure on a semiconductor substrate. The method may include forming a pixel isolation bilayer on the semiconductor substrate. The pixel isolation bilayer may include a high-k layer overlying a stopping layer. The method may include forming a lithographic mask on a first region of the pixel isolation bilayer. The method may also include etching the pixel isolation bilayer external to the first region. The etching may reveal the semiconductor substrate. The etching may form the pixel isolation structure.

公开(公告)号：US20220163707A1

公开(公告)日：2022-05-26

申请号：US17100416

申请日：2020-11-20

Applicant: Applied Materials, Inc.

Inventor： Lan Yu ,  Benjamin D. Briggs ,  Tyler Sherwood ,  Raghav Sreenivasan

IPC: G02B5/08

Abstract: Processing methods may be performed to form a grounded mirror structure on a semiconductor substrate. The methods may include revealing a metal layer. The metal layer may underlie a spacer layer. The metal layer may be revealed by a dry etch process. The method may include forming a mirror layer overlying the spacer layer and the metal layer. The mirror layer may contact the metal layer. The method may also include forming an oxide inclusion overlying a portion of the mirror layer. The portion of the mirror layer may be external to the spacer layer.