公开(公告)号：US11538677B2

公开(公告)日：2022-12-27

申请号：US17009002

申请日：2020-09-01

申请人： Applied Materials, Inc.

发明人： Chuanxi Yang ,  Hang Yu ,  Yu Yang ,  Chuan Ying Wang ,  Allison Yau ,  Xinhai Han ,  Sanjay G. Kamath ,  Deenesh Padhi

IPC分类号： H01L21/02 ,  C23C16/34

摘要： Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may also include forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen. The plasma may be formed at a frequency above 15 MHz. The methods may also include depositing a silicon nitride material on the substrate.

公开(公告)号：US20220375776A1

公开(公告)日：2022-11-24

申请号：US17324495

申请日：2021-05-19

申请人： Applied Materials, Inc.

发明人： Madhu Santosh Kumar Mutyala ,  Saketh Pemmasani ,  Akshay Dhanakshirur ,  Mayur Govind Kulkarni ,  Hang Yu ,  Deenesh Padhi

IPC分类号： H01L21/683 ,  H01J37/32 ,  C23C16/458

摘要： Exemplary substrate support assemblies may include an electrostatic chuck body that defines a substrate support surface. The substrate support surface may define a plurality of protrusions that extend upward from the substrate support surface. A density of the plurality of protrusions within an outer region of the substrate support surface may be greater than in an inner region of the substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include an electrode embedded within the electrostatic chuck body.

公开(公告)号：US20220084809A1

公开(公告)日：2022-03-17

申请号：US17018173

申请日：2020-09-11

申请人： Applied Materials, Inc.

发明人： Chuanxi Yang ,  Hang Yu ,  Deenesh Padhi

IPC分类号： H01L21/02 ,  C23C8/24 ,  C23C8/36 ,  C23C16/38

摘要： Methods for forming a SiBN film comprising depositing a film on a feature on a substrate. The method comprises in a first cycle, depositing a SiB layer on a substrate in a chamber using a chemical vapor deposition process, the substrate having at least one feature thereon, the at least one feature comprising an upper surface, a bottom surface and sidewalls, the SiB layer formed on the upper surface, the bottom surface and the sidewalls. In a second cycle, the SiB layer is treated with a plasma comprising a nitrogen-containing gas to form a conformal SiBN film.