公开(公告)号：US20130020593A1

公开(公告)日：2013-01-24

申请号：US13625274

申请日：2012-09-24

申请人： Seoul Opto Device Co., Ltd.

发明人： Jae Ho LEE

IPC分类号： H01L33/08

CPC分类号： H01L27/156 ,  H01L27/153 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/73265

摘要： The present invention relates to a light emitting device, including a plurality of light guide portions, a reflection prevention substance disposed on an inclined surface of each light guide portion of the plurality of light guide portions, and a plurality light emitting regions. Each light emitting region includes a first-type semiconductor layer, a second-type semiconductor layer, and an active layer disposed between the first-type semiconductor layer and the second-type semiconductor layer. Each light guide portion of the plurality of light guide portions is surrounded by light emitting regions of the plurality of light emitting regions.

公开(公告)号：US09136427B2

公开(公告)日：2015-09-15

申请号：US13713400

申请日：2012-12-13

申请人： Seoul Opto Device Co., Ltd.

发明人： Kwang Joong Kim ,  Chang Suk Han ,  Kyung Hee Ye ,  Seung Kyu Choi ,  Ki Bum Nam ,  Nam Yoon Kim ,  Kyung Hae Kim ,  Ju Hyung Yoon

IPC分类号： H01L27/15 ,  H01L33/06 ,  H01L33/00 ,  H01L33/02 ,  H01L33/04 ,  H01L33/32 ,  H01L21/02

CPC分类号： H01L33/06 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/025 ,  H01L33/04 ,  H01L33/32

摘要： Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

摘要翻译： 本发明的示例性实施例公开了一种发光二极管，其包括掺杂有硅的n型接触层，p型接触层，设置在n型接触层和p型接触层之间的有源区，超晶格 所述超晶格层包括多个层，设置在所述超晶格层和所述n型接触层之间的未掺杂的中间层以及设置在所述未掺杂的中间层之间的电子增强层 层和超晶格层。 最靠近有源区的超晶格层的最终层被掺杂硅，并且最终层的硅掺杂浓度高于n型接触层的掺杂浓度。

公开(公告)号：US20140087502A1

公开(公告)日：2014-03-27

申请号：US14091985

申请日：2013-11-27

申请人： SEOUL OPTO DEVICE CO., LTD.

发明人： Sum Geun LEE ,  Sang Ki Jin ,  Jin Cheol Shin ,  Jong Kyu Kim ,  So Ra Lee

IPC分类号： H01L33/46

CPC分类号： H01L27/153 ,  H01L33/0008 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00014

摘要： Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.

摘要翻译： 本发明的示例性实施例公开了一种包括具有第一表面和第二表面的基板的发光二极管芯片，布置在基板的第一表面上的发光结构，并且包括布置在第一导电类型半导体层 以及第二导电型半导体层，布置在基板的第二表面上的分布式布拉格反射器，用于反射从发光结构发射的光的分布式布拉格反射器和布置在分布式布拉格反射器上的金属层，其中分布式布拉格反射器 布拉格反射体对于蓝色波长范围内的第一波长的光，绿色波长范围的第二波长的光和红色波长范围的第三波长的光具有至少90％的反射率。

公开(公告)号：US08624287B2

公开(公告)日：2014-01-07

申请号：US13753953

申请日：2013-01-30

申请人： Seoul Opto Device Co., Ltd. ,  Dae sung Cho

发明人： Sum Geun Lee ,  Jong Kyu Kim ,  Chang Youn Kim ,  Jin Cheol Shin

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/60 ,  H01L27/156 ,  H01L33/08 ,  H01L33/38 ,  H01L33/46

摘要： Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors.

摘要翻译： 本发明的示例性实施例公开了一种发光二极管（LED）及其制造方法。 LED包括衬底，布置在衬底上的半导体堆叠，所述半导体堆叠包括具有第一导电类型的上半导体层，有源层和具有第二导电类型的下半导体层，将半导体堆叠分离成的隔离沟槽 多个区域，设置在所述基板和所述半导体堆叠之间的连接器，所述连接器将所述多个区域彼此电连接，以及具有多层结构的分布式布拉格反射器（DBR），所述DBR布置在所述半导体堆叠和 连接器。 连接器通过DBR电连接到半导体堆叠，并且DBR的部分设置在隔离沟槽和连接器之间。

公开(公告)号：US20130341592A1

公开(公告)日：2013-12-26

申请号：US14015411

申请日：2013-08-30

申请人： Seoul Opto Device Co., Ltd.

发明人： Jong Lam LEE ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

IPC分类号： H01L33/24

CPC分类号： H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

摘要： The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane.

公开(公告)号：US20130221399A1

公开(公告)日：2013-08-29

申请号：US13862713

申请日：2013-04-15

申请人： Seoul Opto Device Co., Ltd.

发明人： Won Cheol SEO ,  Dae Sung Kal ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

IPC分类号： H01L33/38

CPC分类号： H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

公开(公告)号：US20130140588A1

公开(公告)日：2013-06-06

申请号：US13753953

申请日：2013-01-30

申请人： Seoul Opto Device Co., Ltd.

发明人： Sum Geun LEE ,  Jin Cheol SHIN ,  Jong Kyu KIM ,  Chang Youn KIM

IPC分类号： H01L33/60

CPC分类号： H01L33/60 ,  H01L27/156 ,  H01L33/08 ,  H01L33/38 ,  H01L33/46

摘要： Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors.

摘要翻译： 本发明的示例性实施例公开了一种发光二极管（LED）及其制造方法。 LED包括衬底，布置在衬底上的半导体堆叠，所述半导体堆叠包括具有第一导电类型的上半导体层，有源层和具有第二导电类型的下半导体层，将半导体堆叠分离成的隔离沟槽 多个区域，设置在所述基板和所述半导体堆叠之间的连接器，所述连接器将所述多个区域彼此电连接，以及具有多层结构的分布式布拉格反射器（DBR），所述DBR布置在所述半导体堆叠和 连接器。 连接器通过DBR电连接到半导体堆叠，并且DBR的部分设置在隔离沟槽和连接器之间。