公开(公告)号：US07351621B2

公开(公告)日：2008-04-01

申请号：US10862567

申请日：2004-06-08

申请人： Kyo-Ho Moon

发明人： Kyo-Ho Moon

IPC分类号： H01L21/84

CPC分类号： G02F1/136213 ,  H01L27/1255

摘要： An array substrate for a liquid crystal display device includes a substrate, a plurality of thin film transistors formed on the substrate, each thin film transistor includes a gate electrode, a first gate insulation layer, a second gate insulation layer, an active layer, an ohmic contact layer, a source electrode and a drain electrode, a plurality of gate lines, a plurality of data lines disposed orthogonal to the plurality of gate lines, a plurality of pixel electrodes disposed at pixel regions defined by intersections of the plurality of gate lines and the plurality of data lines, each pixel electrode electrically contacting each drain electrode of the plurality of thin film transistors, and a plurality of storage capacitors each including a portion of each gate line as a first capacitor electrode, the first gate insulation layer as a dielectric layer, and a capacitor electrode electrically communicating with each pixel electrode and functioning as a second capacitor electrode with a portion of each pixel electrode.

摘要翻译： 液晶显示装置用阵列基板包括基板，形成在基板上的多个薄膜晶体管，各薄膜晶体管包括栅电极，第一栅极绝缘层，第二栅极绝缘层，有源层， 欧姆接触层，源电极和漏电极，多条栅极线，与多条栅极线正交设置的多条数据线，多个像素电极，设置在由多条栅极线 并且多个数据线，每个像素电极与多个薄膜晶体管的每个漏电极电接触，以及多个存储电容器，每个存储电容器包括每个栅极线的一部分作为第一电容器电极，第一栅极绝缘层为 电介质层和与每个像素电极电连通并用作第二电容器电极的电容器电极 每个像素电极的部分。

公开(公告)号：US06310666B1

公开(公告)日：2001-10-30

申请号：US09038823

申请日：1998-03-12

申请人： Kyo Ho Moon

发明人： Kyo Ho Moon

IPC分类号： G02F11333

CPC分类号： G02F1/13458 ,  G02F1/136204

摘要： A method for manufacturing a liquid crystal display device, includes the steps of forming a gate line, a gate pad at an end of the gate line, and a gate shorting bar connected to the gate pad on a substrate, wherein the gate shorting bar is offset from an edge of the substrate, and depositing a gate insulation layer completely covering the gate line, the gate pad, and the gate shorting bar.

摘要翻译： 一种制造液晶显示装置的方法，包括以下步骤：在栅极线的端部形成栅极线，栅极焊盘以及连接到基板上的栅极焊盘的栅极短路棒，其中栅极短路棒是 偏离基板的边缘，并且沉积完全覆盖栅极线，栅极焊盘和栅极短路棒的栅极绝缘层。

公开(公告)号：US08902210B2

公开(公告)日：2014-12-02

申请号：US12852683

申请日：2010-08-09

申请人： Kyo Ho Moon ,  Chul Gu Lee ,  Hoon Choi ,  Yong Soo Cho ,  Sang Kug Han

发明人： Kyo Ho Moon ,  Chul Gu Lee ,  Hoon Choi ,  Yong Soo Cho ,  Sang Kug Han

IPC分类号： G06F3/038 ,  G09G5/00 ,  G09G3/36

CPC分类号： G09G3/3677 ,  G09G2320/0223 ,  G09G2320/0252

摘要： An LCD device includes dual gate transistors provided to an output portion of the shift register for outputting a gate voltage. As such, the charge/discharge time of the output portion is reduced so the response time of liquid crystal is improved.

摘要翻译： LCD装置包括提供给移位寄存器的输出部分的双栅极晶体管，用于输出栅极电压。 因此，输出部分的充电/放电时间减少，从而提高了液晶的响应时间。

公开(公告)号：US08633043B2

公开(公告)日：2014-01-21

申请号：US13332666

申请日：2011-12-21

申请人： Yong-Soo Cho ,  Young-Seok Choi ,  Dong-Hee Kim ,  Kyo-Ho Moon ,  Chul-Tae Kim ,  Kyu-Sun Choi

发明人： Yong-Soo Cho ,  Young-Seok Choi ,  Dong-Hee Kim ,  Kyo-Ho Moon ,  Chul-Tae Kim ,  Kyu-Sun Choi

IPC分类号： H01L21/02

CPC分类号： G02F1/1333 ,  G02F1/1368 ,  G02F2001/134372 ,  H01L27/124 ,  H01L27/1288

摘要： A method of fabricating a fringe field switching (FFS)-liquid crystal display (LCD) device may have the following advantage. An inferior connection between the drain electrode and the pixel electrode may be prevented by preventing formation of a copper compound on the drain electrode, by performing a back channel etching after patterning a pixel electrode, and by performing a wet strip rather than a dry strip. This may result in a direct contact between copper and ITO, thereby reducing the number of mask processes.

公开(公告)号：US07936409B2

公开(公告)日：2011-05-03

申请号：US12292095

申请日：2008-11-12

申请人： Jin-Chae Jeon ,  Kyo-Ho Moon

发明人： Jin-Chae Jeon ,  Kyo-Ho Moon

IPC分类号： G02F1/136

CPC分类号： G02F1/1368 ,  H01L27/124 ,  H01L27/1288

摘要： A liquid crystal display device including a gate electrode and a gate line formed on a first substrate, a first insulating layer formed on the first substrate, an active pattern, an ohmic-contact layer, and a diffusion preventing layer formed on the gate electrode, a data line to cross source and drain electrodes and the gate line formed on the diffusion preventing layer to define a pixel area, a second insulating layer formed on the first substrate, a contact hole formed by removing a portion of the second insulating layer and exposing a portion of the drain electrode, a pixel electrode electrically connected with the drain electrode via the contact hole, and a second substrate attached with the first substrate in a facing manner, wherein the diffusion preventing layer comprises a metal tip protruded to the side of the source and drain electrodes.

摘要翻译： 一种液晶显示装置，包括形成在第一基板上的栅电极和栅极线，形成在第一基板上的第一绝缘层，形成在栅电极上的有源图案，欧姆接触层和扩散防止层， 形成在扩散防止层上形成像素区域的交叉源电极和漏电极的数据线，形成在第一基板上的第二绝缘层，通过去除第二绝缘层的一部分而形成的接触孔 所述漏电极的一部分，经由所述接触孔与所述漏电极电连接的像素电极，以及以所述第一基板与所述第一基板相对的方式附着的第二基板，其中所述扩散防止层包括突出于所述漏极电极的侧面的金属尖端 源极和漏极。

公开(公告)号：US20100155733A1

公开(公告)日：2010-06-24

申请号：US12640613

申请日：2009-12-17

申请人： Kyo-Ho Moon ,  Byung-Yong Ahn ,  Hee-Kyoung Choi ,  Chul-Tae Kim ,  Sung-Wook Hong ,  Seung-Woo Jeong ,  Yong-Soo Cho

发明人： Kyo-Ho Moon ,  Byung-Yong Ahn ,  Hee-Kyoung Choi ,  Chul-Tae Kim ,  Sung-Wook Hong ,  Seung-Woo Jeong ,  Yong-Soo Cho

IPC分类号： H01L27/12 ,  H01L21/44

CPC分类号： H01L27/12 ,  G02F1/136227 ,  H01L23/53238 ,  H01L27/0248 ,  H01L27/124 ,  H01L27/1288 ,  H01L2924/0002 ,  H01L2924/00

摘要： An array substrate for a display device and its fabrication method are disclosed. The array substrate for a display device includes: a gate wiring and a gate electrode connected to the wiring formed on a substrate; a gate insulating layer formed on the gate electrode; an active layer and a barrier metal layer stacked with the gate insulating layer interposed therebetween on the gate electrode; a data wiring formed on the barrier metal layer and source and electrodes connected to the data wiring; a passivation film formed on the source and drain electrodes and the data wiring and having a contact hole exposing a portion of the drain electrode, the barrier metal layer and the active layer; and a pixel electrode formed on the passivation film and being in contact with the drain electrode and the barrier metal layer including the active layer.

摘要翻译： 公开了一种用于显示装置的阵列基板及其制造方法。 用于显示装置的阵列基板包括：栅极布线和连接到形成在基板上的布线的栅电极; 形成在所述栅电极上的栅极绝缘层; 在栅电极上层叠有栅绝缘层的有源层和阻挡金属层; 形成在阻挡金属层上的数据布线和连接到数据布线的源极和电极; 形成在源极和漏极以及数据布线上的钝化膜，并具有暴露漏电极，阻挡金属层和有源层的一部分的接触孔; 以及形成在所述钝化膜上并与所述漏电极和包含所述有源层的所述势垒金属层接触的像素电极。

公开(公告)号：US20090121234A1

公开(公告)日：2009-05-14

申请号：US12292095

申请日：2008-11-12

申请人： Jin-Chae Jeon ,  Kyo-Ho Moon

发明人： Jin-Chae Jeon ,  Kyo-Ho Moon

IPC分类号： H01L21/336 ,  H01L33/00

CPC分类号： G02F1/1368 ,  H01L27/124 ,  H01L27/1288

摘要： A liquid crystal display device including a gate electrode and a gate line formed on a first substrate, a first insulating layer formed on the first substrate, an active pattern, an ohmic-contact layer, and a diffusion preventing layer formed on the gate electrode, a data line to cross source and drain electrodes and the gate line formed on the diffusion preventing layer to define a pixel area, a second insulating layer formed on the first substrate, a contact hole formed by removing a portion of the second insulating layer and exposing a portion of the drain electrode, a pixel electrode electrically connected with the drain electrode via the contact hole, and a second substrate attached with the first substrate in a facing manner, wherein the diffusion preventing layer comprises a metal tip protruded to the side of the source and drain electrodes.

摘要翻译： 一种液晶显示装置，包括形成在第一基板上的栅电极和栅极线，形成在第一基板上的第一绝缘层，形成在栅电极上的有源图案，欧姆接触层和扩散防止层， 形成在扩散防止层上形成像素区域的交叉源电极和漏电极的数据线，形成在第一基板上的第二绝缘层，通过去除第二绝缘层的一部分而形成的接触孔 所述漏电极的一部分，经由所述接触孔与所述漏电极电连接的像素电极，以及以所述第一基板与所述第一基板相对的方式附着的第二基板，其中所述扩散防止层包括突出于所述漏极电极的侧面的金属尖端 源极和漏极。

公开(公告)号：US20080213950A1

公开(公告)日：2008-09-04

申请号：US12068233

申请日：2008-02-04

申请人： Kyo-Ho Moon

发明人： Kyo-Ho Moon

IPC分类号： H01L21/00

CPC分类号： G02F1/136213 ,  H01L27/1255

摘要： An array substrate for a liquid crystal display device includes a substrate, a plurality of thin film transistors formed on the substrate, each thin film transistor includes a gate electrode, a first gate insulation layer, a second gate insulation layer, an active layer, an ohmic contact layer, a source electrode and a drain electrode, a plurality of gate lines, a plurality of data lines disposed orthogonal to the plurality of gate lines, a plurality of pixel electrodes disposed at pixel regions defined by intersections of the plurality of gate lines and the plurality of data lines, each pixel electrode electrically contacting each drain electrode of the plurality of thin film transistors, and a plurality of storage capacitors each including a portion of each gate line as a first capacitor electrode, the first gate insulation layer as a dielectric layer, and a capacitor electrode electrically communicating with each pixel electrode and functioning as a second capacitor electrode with a portion of each pixel electrode.

公开(公告)号：US06683668B2

公开(公告)日：2004-01-27

申请号：US10005867

申请日：2001-12-07

申请人： Kyo Ho Moon ,  Yong In Park

发明人： Kyo Ho Moon ,  Yong In Park

IPC分类号： G02F11333

CPC分类号： G02F1/136227 ,  G02F1/133345 ,  G02F1/133711 ,  Y10S438/906 ,  Y10S438/963 ,  Y10T428/10

摘要： A liquid crystal display device includes a substrate, an organic insulating film formed on the substrate, an alignment film having a first etch rate formed on the organic insulating film, and a silicon nitride layer having a second etch rate formed between the alignment film and the organic insulating film, wherein the first etch rate is different from the second etch rate.

公开(公告)号：US06653160B2

公开(公告)日：2003-11-25

申请号：US10216219

申请日：2002-08-12

申请人： Kyo Ho Moon ,  Hu-Sung Kim

发明人： Kyo Ho Moon ,  Hu-Sung Kim

IPC分类号： H01L2100

CPC分类号： H01L27/1255

摘要： A method is disclosed for manufacturing an array substrate for use in a display device. The method includes providing a base substrate, forming a gate line on the base substrate using a first mask, forming sequentially a gate insulating layer, a semiconductor layer and a metal layer over the base substrate and the gate line, patterning the metal layer using a second mask to form a data line and a metal portion on the semiconductor layer, forming a protection layer over the data line, the metal portion and the semiconductor layer, forming a photoresist pattern on the protection layer over the data line using a third mask to define a first structure, applying at least two separate etching steps on the first structure to leave the gate insulating layer of a uniform thickness over the gate line and to pattern layers below the photoresist pattern, and forming a pixel electrode over a portion of the gate insulating layer on the gate line using a fourth mask.