公开(公告)号：US06822472B1

公开(公告)日：2004-11-23

申请号：US10604134

申请日：2003-06-27

申请人： Sanjit K. Das ,  Anthony K. Stamper ,  Eric J. White

发明人： Sanjit K. Das ,  Anthony K. Stamper ,  Eric J. White

IPC分类号： G01R3126

CPC分类号： H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A detection system and method including a means for performing a test on a semiconductor device and obtaining test data therefrom. The semiconductor device includes an insulating layer, a hard mask layer on a surface of the insulating layer, and a plurality of electrically conductive lines within a trench in the insulating layer. The insulating layer comprises a first dielectric material. The hard mask layer comprises a second dielectric material. The dielectric constant of the second dielectric material exceeds the dielectric constant of the first dielectric material or the second dielectric material comprises an element that is not comprised by the first dielectric material. The test data is a function of a spatial distribution of the hard mask layer on the surface of the insulating layer. The detection system and method includes a means for determining from the test data a measure of the spatial distribution of the hard mask layer on the surface of the insulating layer.

摘要翻译： 一种检测系统和方法，包括用于对半导体器件执行测试并从其获得测试数据的装置。 半导体器件包括绝缘层，绝缘层的表面上的硬掩模层以及绝缘层中沟槽内的多个导电线。 绝缘层包括第一电介质材料。 硬掩模层包括第二电介质材料。 第二电介质材料的介电常数超过第一电介质材料的介电常数，或者第二电介质材料包括不由第一电介质材料构成的元件。 测试数据是绝缘层表面上的硬掩模层的空间分布的函数。 检测系统和方法包括用于根据测试数据确定绝缘层表面上的硬掩模层的空间分布的度量的装置。

公开(公告)号：US06818992B1

公开(公告)日：2004-11-16

申请号：US09666325

申请日：2000-09-21

申请人： Douglas S. Armbrust ,  Margaret L. Gibson ,  Laura Serianni ,  Eric J. White

发明人： Douglas S. Armbrust ,  Margaret L. Gibson ,  Laura Serianni ,  Eric J. White

IPC分类号： H01L2348

CPC分类号： H01L21/76849 ,  H01L21/76867 ,  H01L21/76883 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05556 ,  H01L2224/05572 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/19042

摘要： A method for forming a semiconductor structure includes supplying a structure having an exposed last metalization layer, cleaning the last metalization layer, forming a silicide in a top portion of the last metalization layer and forming a terminal over the silicide.

摘要翻译： 一种用于形成半导体结构的方法包括提供具有暴露的最后金属化层的结构，清洗最后的金属化层，在最后一个金属化层的顶部形成硅化物并在硅化物上形成端子。

公开(公告)号：US06340601B1

公开(公告)日：2002-01-22

申请号：US09476237

申请日：1999-12-30

申请人： Thomas F. Curran, Jr. ,  Timothy C. Krywanczyk ,  Michael S. Lube ,  Matthew D. Moon ,  Rock Nadeau ,  Clark D. Reynolds ,  Dean A. Schaffer ,  Joel M. Sharrow ,  Paul H. Smith, Jr. ,  David C. Thomas ,  Eric J. White ,  Kenneth H. Yao

发明人： Thomas F. Curran, Jr. ,  Timothy C. Krywanczyk ,  Michael S. Lube ,  Matthew D. Moon ,  Rock Nadeau ,  Clark D. Reynolds ,  Dean A. Schaffer ,  Joel M. Sharrow ,  Paul H. Smith, Jr. ,  David C. Thomas ,  Eric J. White ,  Kenneth H. Yao

IPC分类号： H01L214763

CPC分类号： H01L21/76892

摘要： A method of reworking copper metallurgy on semiconductor devices which includes selective removal of insulator, selective removal of copper, non-selective removal of copper and insulator followed by the redeposition of an insulating copper barrier layer and at least one metallurgical interconnect layer.

摘要翻译： 一种对半导体器件上的铜冶炼进行再加工的方法，包括绝缘体的选择性去除，铜的选择性去除，铜和绝缘体的非选择性去除，然后再沉积绝缘铜阻挡层和至少一个冶金互连层。

公开(公告)号：US06294105B1

公开(公告)日：2001-09-25

申请号：US08997290

申请日：1997-12-23

申请人： Paul M. Feeney ,  Timothy C. Krywanczyk ,  Lawrence D. David ,  Matthew T. Tiersch ,  Eric J. White

发明人： Paul M. Feeney ,  Timothy C. Krywanczyk ,  Lawrence D. David ,  Matthew T. Tiersch ,  Eric J. White

IPC分类号： C09K1300

CPC分类号： C09G1/02 ,  C09K3/1463 ,  C23F3/00 ,  H01L21/31053 ,  H01L21/3212

摘要： A ferric nitrate-alumina based slurry useful for Chemical-Mechanical-Polishing of tungsten metallurgy and silica based oxides on semiconductor substrates in which the suspension and stability of abrasive material in the slurry is essentially stable. The slurry formulation is balanced to provide low residue of foreign material after polishing and due to its reduced ferric nitrate concentration will be less corrosive than prior art slurries. The recipe for the slurry includes of a 30% wt silica suspension, about 800 ml of 40% by wt ferric nonahydrate and enough 70% wt nitric acid to adjust the pH of the slurry to about 1.2 to 1.4.

摘要翻译： 用于半导体衬底上的钨冶金和二氧化硅基氧化物的化学机械抛光的硝酸铁 - 氧化铝基浆料，其中在浆料中研磨材料的悬浮液和稳定性基本上是稳定的。 浆料配方是平衡的，在抛光后提供低的异物残留，并且由于其降低的硝酸铁浓度将比现有技术的浆料腐蚀性更小。 该浆料的配方包括30重量％的二氧化硅悬浮液，约800毫升40重量％的三水合九水合物和足够的70重量％的硝酸以将浆料的pH调节至约1.2至1.4。

公开(公告)号：US5294570A

公开(公告)日：1994-03-15

申请号：US827846

申请日：1992-01-29

申请人： Marshall J. Fleming, Jr. ,  William A. Syverson ,  Eric J. White

发明人： Marshall J. Fleming, Jr. ,  William A. Syverson ,  Eric J. White

IPC分类号： H01L21/304 ,  H01L21/306 ,  H01L21/308

CPC分类号： H01L21/02052 ,  Y10S438/906 ,  Y10S438/974

摘要： A substantial reduction in the foreign particulate matter contamination on surfaces, such as the surfaces of semiconductor wafers, is achieved by treating the surfaces with a solution comprising a strong acid and a very small amount of a fluorine-containing compound. A preferred method employs a solution containing sulfuric acid, hydrogen peroxide and a very small amount of hydrofluoric acid, which is effective in reducing foreign particulate matter contamination, without significant etching, of the surface being treated.

摘要翻译： 通过用包含强酸和极少量含氟化合物的溶液处理表面，可以实现诸如半导体晶片的表面的表面上的外来颗粒物质污染物的显着减少。 优选的方法是使用含有硫酸，过氧化氢和非常少量的氢氟酸的溶液，其有效地减少未处理表面的异物颗粒物污染，而不会显着蚀刻。

公开(公告)号：US08829518B2

公开(公告)日：2014-09-09

申请号：US13231516

申请日：2011-09-13

申请人： Jeffrey C. Maling ,  Anthony K. Stamper ,  Eric J. White

发明人： Jeffrey C. Maling ,  Anthony K. Stamper ,  Eric J. White

IPC分类号： H01L29/10

CPC分类号： B81C99/004

摘要： A test structure for measuring a Micro-Electro-Mechanical System (MEMS) cavity height structure and calibration method. The method includes forming a sacrificial cavity material over a plurality of electrodes and forming an opening into the sacrificial cavity material. The method further includes forming a transparent or substantially transparent material in the opening to form a transparent or substantially transparent window. The method further includes tuning a thickness of the sacrificial cavity material based on measurements obtained through the transparent or substantially transparent window.

摘要翻译： 用于测量微机电系统（MEMS）腔体高度结构和校准方法的测试结构。 该方法包括在多个电极上形成牺牲腔材料并在牺牲腔材料中形成开口。 该方法还包括在开口中形成透明或基本上透明的材料以形成透明或基本上透明的窗口。 该方法还包括基于通过透明或基本上透明的窗口获得的测量值调整牺牲腔材料的厚度。

公开(公告)号：US20130062603A1

公开(公告)日：2013-03-14

申请号：US13231516

申请日：2011-09-13

申请人： Jeffrey C. Maling ,  Anthony K. Stamper ,  Eric J. White

发明人： Jeffrey C. Maling ,  Anthony K. Stamper ,  Eric J. White

IPC分类号： H01L29/84 ,  H01L21/66

CPC分类号： B81C99/004

摘要： A test structure for measuring a Micro-Electro-Mechanical System (MEMS) cavity height structure and calibration method. The method includes forming a sacrificial cavity material over a plurality of electrodes and forming an opening into the sacrificial cavity material. The method further includes forming a transparent or substantially transparent material in the opening to form a transparent or substantially transparent window. The method further includes tuning a thickness of the sacrificial cavity material based on measurements obtained through the transparent or substantially transparent window.

摘要翻译： 用于测量微机电系统（MEMS）腔体高度结构和校准方法的测试结构。 该方法包括在多个电极上形成牺牲腔材料并在牺牲腔材料中形成开口。 该方法还包括在开口中形成透明或基本上透明的材料以形成透明或基本上透明的窗口。 该方法还包括基于通过透明或基本上透明的窗口获得的测量值调整牺牲腔材料的厚度。

公开(公告)号：US08328892B2

公开(公告)日：2012-12-11

申请号：US11930236

申请日：2007-10-31

申请人： Joseph K. V. Comeau ,  Marina M. Katsnelson ,  Matthew T. Tiersch ,  Eric J. White

发明人： Joseph K. V. Comeau ,  Marina M. Katsnelson ,  Matthew T. Tiersch ,  Eric J. White

IPC分类号： B24D3/02 ,  C09C1/68 ,  H01L21/461 ,  H01L21/302 ,  C09K13/00 ,  C09K13/06

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C09G1/04

摘要： A solution for forming a polishing slurry, the polishing slurry and related methods are disclosed. The solution for forming a polishing slurry may include 1 H-benzotriazole (BTA) dissolved in an ionic surfactant such as a sodium alkyl sulfate solution, and perhaps a polyacrylic acid (PAA) solution. The solution can be filtered and used in a polishing slurry. This approach to solubilizing BTA results in a high BTA concentration in a polishing slurry without addition of foreign components to the slurry or increased safety hazard. In addition, the solution is easier to ship because it is very stable (e.g., can be frozen and thawed) and has less volume compared to conventional approaches. Further, the polishing slurry performance is vastly improved due to the removal of particles that can cause scratching.

摘要翻译： 公开了一种用于形成抛光浆料，抛光浆料和相关方法的溶液。 用于形成抛光浆料的溶液可以包括溶解在离子表面活性剂如烷基硫酸钠溶液中的1H-苯并三唑（BTA），以及可能的聚丙烯酸（PAA）溶液。 该溶液可以过滤并用于抛光浆料中。 这种溶解BTA的方法导致抛光浆料中的高BTA浓度，而不会向浆料中添加外来成分或增加安全隐患。 此外，由于该溶液非常稳定（例如可以冷冻和解冻）并且与常规方法相比具有较少的体积，因此该溶液更易于运输。 此外，由于去除可能引起划伤的颗粒，抛光浆料性能大大提高。

公开(公告)号：US20120070979A1

公开(公告)日：2012-03-22

申请号：US12887737

申请日：2010-09-22

申请人： Felix P. Anderson ,  Zhong-Xiang He ,  Anthony K. Stamper ,  Eric J. White

发明人： Felix P. Anderson ,  Zhong-Xiang He ,  Anthony K. Stamper ,  Eric J. White

IPC分类号： H01L21/768 ,  C25D5/12 ,  C25D5/14 ,  H01L21/02

CPC分类号： H01L21/7684 ,  C25D3/38 ,  C25D5/10 ,  C25D5/12 ,  H01L21/2885 ,  H01L21/76877

摘要： The disclosure relates generally to semiconductor device fabrication, and more particularly to methods of electroplating used in semiconductor device fabrication. A method of electroplating includes: immersing an in-process substrate into an electrolytic plating solution to form a first metal layer on the in-process substrate; then performing a first chemical-mechanical polish to a liner on the in-process substrate followed by immersing the in-process substrate into the electrolytic plating solution to form a second metal layer on the first metal layer and the liner; and performing a second chemical-mechanical polish to the liner.

摘要翻译： 本公开一般涉及半导体器件制造，更具体地涉及用于半导体器件制造中的电镀方法。 电镀方法包括：将处理后的基板浸入电解镀液中以在工艺衬底上形成第一金属层; 然后对所述工艺衬底上的衬垫进行第一化学机械抛光，然后将所述工艺衬底浸入所述电解电镀溶液中，以在所述第一金属层和所述衬垫上形成第二金属层; 以及对所述衬垫执行第二化学机械抛光。

公开(公告)号：US20100248479A1

公开(公告)日：2010-09-30

申请号：US12415406

申请日：2009-03-31

申请人： Thomas L. McDevitt ,  Graham M. Bates ,  Eva A. Shah ,  Matthew T. Tiersch ,  Eric J. White

发明人： Thomas L. McDevitt ,  Graham M. Bates ,  Eva A. Shah ,  Matthew T. Tiersch ,  Eric J. White

IPC分类号： H01L21/304

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： The instant invention is a method of polishing a substrate including contacting a substrate having at least one metal layer including copper with a chemical-mechanical polishing composition. The CMP composition includes an abrasive, a surfactant, an oxidizer, an organic acid including polyacrylic acid or polymethacrylic acid, a corrosion inhibitor, and a liquid carrier. A portion of the copper in the metal layer is abraded to polish the substrate. A second CMP composition contacts the abraded substrate, the second acrylate free composition including an abrasive, a surfactant, an oxidizer, and a corrosion inhibitor, and a liquid carrier. Any dendrites that may have formed on the substrate are removed through abrasion.

摘要翻译： 本发明是抛光衬底的方法，包括使具有至少一个包含铜的金属层的衬底与化学机械抛光组合物接触。 CMP组合物包括研磨剂，表面活性剂，氧化剂，包括聚丙烯酸或聚甲基丙烯酸的有机酸，腐蚀抑制剂和液体载体。 金属层中的铜的一部分被磨损以抛光基底。 第二CMP组合物接触研磨的基材，第二无丙烯酸酯组合物包含研磨剂，表面活性剂，氧化剂和腐蚀抑制剂以及液体载体。 可能通过磨损去除可能在基底上形成的任何枝晶。