Abstract:
An object of the present invention is to provide a sample image forming method and a charged particle beam apparatus which are suitable for realizing suppressing of the view area displacement with high accuracy while the influence of charging due to irradiation of the charged particle beam is being suppressed. In order to attain the above object, the present invention provide a method of forming a sample image by scanning a charged particle beam on a sample and forming an image based on secondary signals emitted from the sample, the method comprising the steps of forming a plurality of composite images by superposing a plurality of images obtained by a plurality of scanning times; and forming a further composite image by correcting positional displacements among the plurality of composite images and superposing the plurality of composite images, and a charged particle beam apparatus for realizing the above method.
Abstract:
An electron optics assembly for a multi-column electron beam inspection tool comprises a single accelerator structure and a single focus electrode mounting plate for all columns; the electron optical components are one per column and are independently alignable. The accelerator structure comprises first and final accelerator electrodes with a set of accelerator plates in between; the first and final accelerator plates have an aperture for each column and the accelerator plates have a single aperture such that the electron optical axes for all columns pass through the single aperture. Independently alignable focus electrodes are attached to the focus electrode mounting plate, allowing each electrode to be aligned to the electron optical axis of its corresponding column. There is one electron gun per column, mounted on the top of the single accelerator structure. In other embodiments, the electron guns are mounted to a single gun mounting plate positioned above the accelerator structure.
Abstract:
A detector system for a particle beam apparatus, in particular for a scanning electron microscope, has a target structure, which in a central region near the optical axis includes an electron-converting material. The target structure also includes either a non-converting material in a region remote from the optical axis or the region remote from the optical axis is offset in the direction of the optical axis with respect to the region near the optical axis that includes the electron-converting material. The detector system makes possible separate detection of only back-scattered electrons or only secondary electrons.
Abstract:
We have developed a particular combination of elements and devices which enables the portability of a scanning electron microscope (SEM). In particular the combination enables a small size, typically less than about 50 liters, a manageable weight, typically less than about 15 kg, and a low power requirement, typically less than about 100 W, which permits operation using power supplied from a portable source such as a battery. Higher performance versions may exhibit increased volume in the range of about 150 liters, increased weight, in the range of 45 kg, and a power requirement in the range of 300 W. The higher performance version of the portable scanning electron microscope may be portable with the assistance of a dolly (rolling cart) or with the assistance of attached wheels and pulling appendage.
Abstract:
The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.
Abstract:
The disclosure is concerned with an electron microscope comprising a casing for encasing an assembly and a display disposed to the casing. The assembly comprises a vacuum container, a vacuum pump for evacuating the vacuum container, an electron emitter disposed at the upper position of the vacuum vessel, a sample chamber disposed at the lower position of the vacuum container and capable of projecting from the casing and a detector for detecting an electron beam emitted from a sample placed in the sample chamber.
Abstract:
A swinging objective retarding immersion lens system and method therefore which provide a low voltage electron beam with high beam current, relatively high spatial resolution, a relative large scan field, and high signal collection efficiency. The objective lens includes a magnetic lens for generating a magnetic field in the vicinity of the specimen to focus the particles of the particle beam on the specimen, an electrode having a potential for providing a retarding field to the particle beam near the specimen to reduce the energy of the particle beam when the beam collides with the specimen; a deflection system including a plurality of deflection units situated along the beam axis for deflecting the particle beam to allow scanning on the specimen with large area, at least one of the deflection units located in the retarding field of the beam, the remainder of the deflection units located within the central bore of the magnetic lens; and a annular detection unit with a relatively small aperture, located underneath the primary beam define aperture, to capture secondary electron (SE) and backscattered electrons (BSE).
Abstract:
An object of the present invention is to provide a scanning electron microscope for reducing a process concerning inspection positioning or an input operation, thereby functioning with high precision at high speed. To accomplish the above object, the present invention provides a scanning electron microscope having a finction for identifying a desired position on the basis of a pattern registered beforehand, which includes a means for setting information concerning the pattern kind, the interval between a plurality of parts constituting the pattern, and the size of parts constituting the pattern and a means for forming a pattern image composed of a plurality of parts on the basis of the information obtained by the concerned means.
Abstract:
In an operation of an electron microscope, at least a spot size of an electron beam on a specimen, an acceleration voltage, a detector type, a specimen position, and an observation magnification are set as a predetermined image observation condition and an observation image is picked up under the predetermined image observation condition. Different image observation conditions are automatically set based on the observation image. A plurality of observation images are picked up based on the setup image observation conditions. The plurality of picked-up observation images are simultaneously displayed on a second display section. A desired observation image is selected from among the observation images displayed on the second display section. The selected observation image is displayed on a first display section on an enlarged scale.
Abstract:
A film thickness measuring apparatus applies an electron beam to a thin film as a measurement object formed on a substrate, and measures a value of substrate current that flows in the substrate thereupon. The film thickness measuring apparatus corrects the substrate current value taking into account an influence of a charge distribution generated in the neighborhood of the thin film due to the application of the electron beam or an influence of a configuration of the surface of the substrate in the neighborhood of the thin film. The film thickness measuring apparatus acquires reference data representing a correlation between film thicknesses and substrate current values with respect to standard samples and calculates a thickness of the thin film from the corrected substrate current value taking into account the reference data.