公开(公告)号：US20190333741A1

公开(公告)日：2019-10-31

申请号：US16396109

申请日：2019-04-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koichi NAGAMI ,  Tatsuro OHSHITA ,  Kazuya NAGASEKI ,  Shinji HIMORI

IPC: H01J37/32

Abstract: A plasma processing method includes providing a plasma processing apparatus; supplying radio-frequency waves from a radio-frequency power supply; and applying a negative DC voltage to a lower electrode from the at least one DC power supply. In the applying the DC voltage, the DC voltage is cyclically applied to the lower electrode, and in a state where a frequency defining each cycle in which the DC voltage is applied to the lower electrode is set to be lower than 1 MHz, a ratio occupied by a period during which the DC voltage is applied to the lower electrode in the each cycle is regulated.

公开(公告)号：US20190252157A1

公开(公告)日：2019-08-15

申请号：US16270811

申请日：2019-02-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki MOYAMA ,  Kazuya NAGASEKI

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01J37/32449 ,  H01J37/32834 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: A plasma processing system includes a chamber, a gas supply unit, a gas exhaust unit, a separating unit, a boost unit and an accumulation unit. The chamber is configured to process a target substrate by plasma of a gaseous mixture of a rare gas and a processing gas. The gas supply unit is configured to supply the rare gas and the processing gas into the chamber. The gas exhaust unit is configured to exhaust a gas containing the rare gas from the chamber. The separating unit is configured to separate the rare gas from the gas exhausted by the gas exhaust unit. The boost unit is configured to boost the rare gas separated by the separating unit. The accumulation unit is configured to accumulate the rare gas boosted by the boost unit and supply the accumulated first rare gas to the gas supply unit.

公开(公告)号：US20180174806A1

公开(公告)日：2018-06-21

申请号：US15840636

申请日：2017-12-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuya NAGASEKI ,  Shinji HIMORI ,  Mitsunori OHATA

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32669 ,  H01J37/3211 ,  H01J37/32449 ,  H01J37/32688 ,  H01J37/32715 ,  H01L21/67069

Abstract: Disclosed is a plasma processing apparatus including: a processing container; a placing table provided in the processing container and configured to place a workpiece thereon; a dielectric member having a facing surface that faces the placing table; a planar antenna provided on a surface of the dielectric member opposite to the facing surface and configured to introduce an induced electric field for plasma excitation into the processing container via the dielectric member; and an electromagnet group disposed along an outer circumference of the processing container and configured to form a magnetic field for moving ions in plasma based on the induced electric field along the facing surface of the dielectric member in the processing container.

公开(公告)号：US20170103877A1

公开(公告)日：2017-04-13

申请号：US15288205

申请日：2016-10-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro YOKOTA ,  Shinji HIMORI ,  Tatsuro OHSHITA ,  Shu KUSANO ,  Etsuji ITO ,  Kazuya NAGASEKI

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32669 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/67069

Abstract: Disclosed is a plasma etching method which is performed using a plasma processing apparatus that is a capacitively coupled plasma processing apparatus, and includes: a processing container; a gas supply unit that supply an etching processing gas into the processing container; a placing table including a lower electrode; an upper electrode provided above the placing table; and a plurality of electromagnets including a plurality of coils, or a plurality of electromagnets each including a coil, on the upper electrode. The plasma etching method includes generating plasma of the processing gas to perform a plasma etching on a single film of a workpiece placed on the placing table; and controlling a current supplied to the plurality of electromagnet to change a distribution of an etching rate of the single film in the diametric direction with respect to the central axis during the generating of the plasma of the processing gas.

公开(公告)号：US20240194459A1

公开(公告)日：2024-06-13

申请号：US18416880

申请日：2024-01-18

Applicant: Tokyo Electron Limited

Inventor： Kazuya NAGASEKI ,  Kazuki MOYAMA ,  Shinji HIMORI ,  Masanobu HONDA ,  Satoru TERUUCHI

IPC: H01J37/32

CPC classification number: H01J37/32724

Abstract: A processing method and corresponding device for performing plasma processing on a substrate includes placing a temperature adjustment target onto a support surface of a substrate support in a processing chamber being decompressible, forming a heat transfer layer for the temperature adjustment target on the support surface of the substrate support, and performing plasma processing on the substrate on the support surface on which the heat transfer layer is formed. The heat transfer layer is deformable and includes at least one of a liquid layer or a deformable solid layer.

公开(公告)号：US20240096608A1

公开(公告)日：2024-03-21

申请号：US18515220

申请日：2023-11-20

Applicant: Tokyo Electron Limited

Inventor： Satoru TERUUCHI ,  Jun HIROSE ,  Kazuya NAGASEKI ,  Shinji HIMORI

IPC: H01J37/32 ,  G01N21/68

CPC classification number: H01J37/32935 ,  G01N21/68 ,  H01J2237/2445 ,  H01J2237/24585 ,  H01L21/67253

Abstract: A plasma monitoring system includes a monitoring device and a control device. The monitoring device is a device to be placed on a stage in the plasma processing apparatus. The monitoring device includes a plate-shaped base substrate, and a plurality of spectroscopes having optical axes facing upward on the base substrate, and being disposed apart from each other to acquire light emission intensities of the plasma. The control device acquires light emission intensity distribution data of the plasma in the plasma processing apparatus based on the light emission intensity acquired by each of the plurality of spectroscopes.

公开(公告)号：US20220062943A1

公开(公告)日：2022-03-03

申请号：US17458691

申请日：2021-08-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki ISHII ,  Kazuya NAGASEKI ,  Michishige SAITO

IPC: B05C5/02 ,  B05C11/10 ,  B05C17/005

Abstract: A film forming apparatus is disclosed. The apparatus comprises a chamber; an exhaust unit configured to reduce the pressure in the chamber to a predetermined vacuum level; a holder disposed in the chamber and configured to hold a film forming target member on which a film is to be formed; a supply unit configured to supply a film forming material containing silicon to a surface of the film forming target member; and a heat source configured to perform heating at the predetermined vacuum level to melt the supplied film forming material.

公开(公告)号：US20210391153A1

公开(公告)日：2021-12-16

申请号：US17337696

申请日：2021-06-03

Applicant: Tokyo Electron Limited

Inventor： Takayuki ISHII ,  Kazuya NAGASEKI ,  Michishige SAITO

IPC: H01J37/32 ,  H01L21/687

Abstract: A stage includes a first member made of a material having a density of 5.0 g/cm3 or less, and a second member joined to the first member. The second member is made of a material having a linear expansion coefficient of 5.0×10−6/K or less and a thermal conductivity of 100 W/mK or more. A flow passage for a temperature control medium is formed in at least one of the first member and the second member.

公开(公告)号：US20210366697A1

公开(公告)日：2021-11-25

申请号：US16646277

申请日：2019-05-10

Applicant: Tokyo Electron Limited

Inventor： Michishige SAITO ,  Kazuya NAGASEKI ,  Shota KANEKO

IPC: H01J37/32

Abstract: A forming method of a component used in a plasma processing apparatus includes irradiating an energy beam to a source material of the component while supplying the source material based on a surface state of the component.

公开(公告)号：US20210159049A1

公开(公告)日：2021-05-27

申请号：US17102444

申请日：2020-11-24

Applicant: Tokyo Electron Limited

Inventor： Shinji KUBOTA ,  Kazuya NAGASEKI ,  Shinji HIMORI ,  Koichi NAGAMI

IPC: H01J37/32

Abstract: A disclosed plasma processing method includes generating plasma in a chamber of a plasma processing apparatus by supplying radio frequency power from a radio frequency power source in a first period. The plasma processing method further includes stopping supply of the radio frequency power from the radio frequency power source in a second period following the first period. The plasma processing method further includes applying a negative direct-current voltage from a bias power source to a substrate support in a third period following the second period. In the third period, the radio frequency power is not supplied. In the third period, the negative direct-current voltage is set to generate ions in a chamber by secondary electrons that are emitted by causing ions in the chamber to collide with a substrate.