公开(公告)号：US10375763B2

公开(公告)日：2019-08-06

申请号：US15090879

申请日：2016-04-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke Hayashi ,  Masato Takayama

IPC: H05B1/02 ,  H05B3/14 ,  F27B17/00 ,  H01L21/67 ,  H01L21/683 ,  F27D21/00

Abstract: A processing system includes a thermo viewer 51 which measures a temperature distribution over a top surface of a semiconductor wafer; a temperature measuring device 14 which measures, for each of divided areas of the semiconductor wafer, a temperature of a portion in the divided area; a median value calculating unit 202 which calculates, for each divided area, a median value of a temperature distribution of the divided area, based on the temperature distribution measured by the thermo viewer 51; an offset calculating unit 204 which calculates, for each divided area, a difference between the median value and the temperature of the portion as an offset; and a temperature control unit 205 which controls, for each divided area, the temperature of the divided area such that the median value becomes equal to a set temperature, based on the offset and the temperature measured by the temperature measuring device 14.

公开(公告)号：US20140352890A1

公开(公告)日：2014-12-04

申请号：US14462657

申请日：2014-08-19

Applicant: Tokyo Electron Limited

Inventor： Daisuke Hayashi

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32568 ,  H01J37/32018 ,  H01J37/32458 ,  H01J37/32577 ,  H01J37/32908 ,  H01J2237/024 ,  H01J2237/1502 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/67069

Abstract: A substrate processing apparatus includes: a cylindrical shaped chamber configured to accommodate a substrate; a movable electrode capable of moving along a central axis of the cylindrical shaped chamber within the cylindrical shaped chamber; a facing electrode facing the movable electrode within the cylindrical shaped chamber; and an expansible/contractible partition wall connecting the movable electrode with an end wall on one side of the cylindrical shaped chamber. A high frequency power is applied to a first space between the movable electrode and the facing electrode, a processing gas is introduced thereto, and the movable electrode is not in contact with a sidewall of the cylindrical shaped chamber, a first dielectric member is provided at the cylindrical shaped chamber's sidewall facing the movable electrode, and an overlap area between the first dielectric member and a side surface of the movable electrode is changed according to movement of the movable electrode.

Abstract translation: 一种基板处理装置，包括：圆筒形室，其构造成容纳基板; 可移动电极，其能够沿着圆柱形腔室的中心轴线移动; 在圆柱形腔室内面向可动电极的面对电极; 以及将可动电极与圆筒形室的一侧上的端壁连接的可膨胀/收缩的分隔壁。 高频功率被施加到可动电极和面对电极之间的第一空间，处理气体被引入其中，可动电极不与圆柱形腔室的侧壁接触，第一介电构件设置在 圆筒形腔的侧壁面向可动电极，第一电介质构件与可动电极的侧面之间的重叠区域根据活动电极的移动而改变。

公开(公告)号：US20140202618A1

公开(公告)日：2014-07-24

申请号：US14158916

申请日：2014-01-20

Applicant: Tokyo Electron Limited

Inventor： Daisuke Hayashi

IPC: H02N13/00 ,  B29C65/50 ,  B29C65/00

CPC classification number: H02N13/00

Abstract: A distance between the surface of the base member and the electrostatic chuck having the heater pattern formed on a bottom surface thereof can be uniformized. A bonding method of bonding an electrostatic chuck and a base member to each other includes forming a filling member 30 by covering irregularities of a heater pattern 9a formed on a bottom surface 61 of the electrostatic chuck 9 facing the base member 10; grinding a base member contact surface 62 of the filling member 30 facing the base member 10; and bonding the ground base member contact surface 62 of the filling member 30 to the base member 10 with an adhesive layer 31 provided therebetween.

Abstract translation: 基底部件的表面与形成在其底面上的具有加热器图案的静电卡盘之间的距离可以均匀化。 将静电卡盘和基体构件彼此接合的接合方法包括：通过覆盖形成在面向基底构件10的静电卡盘9的底面61上的加热器图案9a的凹凸来形成填充构件30; 研磨填充构件30的与基底构件10相对的基部构件接触表面62; 并且将填充构件30的接地基部构件接触面62与设置在其间的粘合剂层31接合到基底构件10。