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    Image sensor device with reflective layer
    22.
    发明授权
    Image sensor device with reflective layer 有权

    公开(公告)号：US11342372B2

    公开(公告)日：2022-05-24

    申请号：US16924538

    申请日：2020-07-09

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chun-Chieh Fang ,  Ming-Chi Wu ,  Ji-Heng Jiang ,  Chi-Yuan Wen ,  Chien-Nan Tu ,  Yu-Lung Yeh ,  Shih-Shiung Chen ,  Kun-Yu Lin

    IPC: H01L31/0232 ,  H01L27/146

    Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a first side, a second side opposite to the first side, and at least one light-sensing region close to the first side. The image sensor device includes a dielectric feature covering the second side and extending into the semiconductor substrate. The dielectric feature in the semiconductor substrate surrounds the light-sensing region. The image sensor device includes a reflective layer in the dielectric feature in the semiconductor substrate, wherein a top portion of the reflective layer protrudes away from the second side, and a top surface of the reflective layer and a top surface of the insulating layer are substantially coplanar.

    QE APPROACH BY DOUBLE-SIDE, MULTI ABSORPTION STRUCTURE
    24.
    发明申请
    QE APPROACH BY DOUBLE-SIDE, MULTI ABSORPTION STRUCTURE 有权

    公开(公告)号：US20210119064A1

    公开(公告)日：2021-04-22

    申请号：US17134782

    申请日：2020-12-28

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Po-Han Huang ,  Chien Nan Tu ,  Chi-Yuan Wen ,  Ming-Chi Wu ,  Yu-Lung Yeh ,  Hsin-Yi Kuo

    IPC: H01L31/0232 ,  H01L27/146 ,  H01L27/30 ,  H01L31/02 ,  H01L31/0224

    Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.

    QE approach by double-side, multi absorption structure
    25.
    发明授权
    QE approach by double-side, multi absorption structure 有权

    公开(公告)号：US10707361B2

    公开(公告)日：2020-07-07

    申请号：US16580350

    申请日：2019-09-24

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Po-Han Huang ,  Chien Nan Tu ,  Chi-Yuan Wen ,  Ming-Chi Wu ,  Yu-Lung Yeh ,  Hsin-Yi Kuo

    IPC: H01L31/0232 ,  H01L27/146 ,  H01L27/30 ,  H01L31/02 ,  H01L31/0224

    Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.

    QE APPROACH BY DOUBLE-SIDE, MULTI ABSORPTION STRUCTURE
    26.
    发明申请
    QE APPROACH BY DOUBLE-SIDE, MULTI ABSORPTION STRUCTURE 审中-公开

    公开(公告)号：US20200020816A1

    公开(公告)日：2020-01-16

    申请号：US16580350

    申请日：2019-09-24

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Po-Han Huang ,  Chien Nan Tu ,  Chi-Yuan Wen ,  Ming-Chi Wu ,  Yu-Lung Yeh ,  Hsin-Yi Kuo

    IPC: H01L31/0232 ,  H01L31/0224 ,  H01L31/02 ,  H01L27/30

    Abstract: The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.

    CMOS image sensor structure with crosstalk improvement
    30.
    发明授权
    CMOS image sensor structure with crosstalk improvement 有权
    具有串扰改善的CMOS图像传感器结构

    公开(公告)号：US09397130B1

    公开(公告)日：2016-07-19

    申请号：US14583406

    申请日：2014-12-26

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Chien-Chang Huang ,  Hsing-Chih Lin ,  Chien-Nan Tu ,  Yu-Lung Yeh

    IPC: H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689

    Abstract: A semiconductor device includes a substrate, a semiconductor layer, light-sensing devices, a transparent dielectric layer and a grid shielding layer. The semiconductor layer overlies the substrate, and has a first surface and a second surface opposite to the first surface. The semiconductor layer includes microstructures disposed on the second surface of the semiconductor layer. The light-sensing devices are disposed on the first surface of the semiconductor layer. The transparent dielectric layer is disposed on the second surface of the semiconductor layer, and covers the microstructures. The grid shielding layer extends from the first surface of the semiconductor layer toward the second surface of the semiconductor layer, and surrounds each of the light-sensing devices to separate the light-sensing devices from each other, in which a depth of the grid shielding layer is greater than two-thirds of a thickness of the semiconductor layer.

    Abstract translation: 半导体器件包括衬底，半导体层，光感测器件，透明电介质层和栅极屏蔽层。 半导体层覆盖在基板上，并且具有与第一表面相对的第一表面和第二表面。 半导体层包括设置在半导体层的第二表面上的微结构。 光感测装置设置在半导体层的第一表面上。 透明电介质层设置在半导体层的第二表面上并覆盖微结构。 栅极屏蔽层从半导体层的第一表面朝向半导体层的第二表面延伸，并且围绕每个光感测器件以彼此分离光感测器件，其中栅极屏蔽的深度 层的厚度大于半导体层厚度的三分之二。

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