公开(公告)号：US20210193566A1

公开(公告)日：2021-06-24

申请号：US16885378

申请日：2020-05-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Ya Lo ,  Chi-Lin Teng ,  Hai-Ching Chen ,  Hsin-Yen Huang ,  Shau-Lin Shue ,  Shao-Kuan Lee ,  Cheng-Chin Lee

IPC: H01L23/522 ,  H01L23/538 ,  H01L21/768

Abstract: Some embodiments relate to a semiconductor structure including an inter-level dielectric (ILD) layer overlying a substrate. A conductive via is disposed within the ILD layer. A plurality of conductive wires overlie the ILD layer. The plurality of conductive wires includes a first conductive wire laterally offset a second conductive wire. A dielectric structure is disposed laterally between the first and second conductive wires. The dielectric structure includes a first dielectric liner, a dielectric layer, and an air-gap. The air-gap is disposed between an upper surface of the first dielectric liner and a lower surface of the dielectric layer. A dielectric capping layer is disposed along an upper surface of the dielectric structure. The dielectric capping layer continuously extends between opposing sidewalls of the dielectric structure and is laterally offset from the plurality of conductive wires.

公开(公告)号：US20200058546A1

公开(公告)日：2020-02-20

申请号：US16451432

申请日：2019-06-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kai-Fang Cheng ,  Chi-Lin Teng ,  Hsin-Yen Huang ,  Hai-Ching Chen

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3213

Abstract: A method includes providing a dielectric layer; forming a metal line in the dielectric layer; forming an etch stop layer on the metal line, wherein the etch stop layer includes a metal atom bonded with a hydroxyl group; performing a treatment process to the etch stop layer to displace hydrogen in the hydroxyl group with an element other than hydrogen; partially etching the etch stop layer to expose the metal line; and forming a conductive feature above the etch stop layer and in physical contact with the metal line.

公开(公告)号：US10090245B2

公开(公告)日：2018-10-02

申请号：US15728762

申请日：2017-10-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kai-Fang Cheng ,  Chi-Lin Teng ,  Hai-Ching Chen ,  Hsin-Yen Huang ,  Tien-I Bao ,  Jung-Hsun Tsai

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/528 ,  H01L21/768 ,  H01L23/522

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first conductive structure over the substrate. The semiconductor device structure includes a first dielectric layer over the substrate and the first conductive structure. The semiconductor device structure includes a second conductive structure over the first conductive structure and extending into the first dielectric layer. The second conductive structure is electrically connected to the first conductive structure. The semiconductor device structure includes a cover layer between the second conductive structure and the first dielectric layer. The cover layer surrounds the second conductive structure, the second conductive structure passes through the cover layer and is partially between the cover layer and the first conductive structure, and the cover layer includes a metal oxide.