公开(公告)号：US11296187B2

公开(公告)日：2022-04-05

申请号：US16937344

申请日：2020-07-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shuen-Shin Liang ,  Chen-Han Wang ,  Keng-Chu Lin ,  Tetsuji Ueno ,  Ting-Ting Chen

IPC: H01L29/06 ,  H01L21/02 ,  H01L27/088 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

Abstract: The present disclosure relates to a semiconductor device including first and second terminals formed on a fin region and a seal layer formed between the first and second terminals. The seal layer includes a silicon carbide material doped with oxygen. The semiconductor device also includes an air gap surrounded by the seal layer, the fin region, and the first and second terminals.

公开(公告)号：US20210407856A1

公开(公告)日：2021-12-30

申请号：US16916397

申请日：2020-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Han Wang ,  Keng-Chu Lin ,  Shuen-Shin Liang ,  Tetsuji Ueno ,  Ting-Ting Chen

IPC: H01L21/8234 ,  H01L29/66 ,  H01L29/78

Abstract: The present disclosure describes a method of fabricating a semiconductor structure that includes forming a fin structure on a substrate, forming a polysilicon gate structure on a first portion of the fin structure, forming an opening in a second portion of the fin structure, wherein the first and second portions of the fin structure is adjacent to each other, forming a recess laterally on a sidewall of the first portion of the fin structure underlying the polysilicon gate structure, and forming an inner spacer structure within the recess. The inner spacer structure comprises an inner air spacer enclosed by a first dielectric spacer layer and a second dielectric spacer layer.