公开(公告)号：US20220285188A1

公开(公告)日：2022-09-08

申请号：US17506154

申请日：2021-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunjoon KIM ,  Seogwoo Hong ,  Kyungwook Hwang ,  Junsik Hwang ,  Dongho Kim ,  Joonyong Park

IPC: H01L21/673 ,  H01L33/20 ,  H01L33/62 ,  B65G47/90

Abstract: Provided is a display transfer structure including a substrate including a plurality of wells, and a plurality of light emitting elements disposed in the plurality of wells, wherein the plurality of light emitting elements have a rotationally asymmetric planar shape, and wherein the plurality of wells respectively have a planar shape different from a planar shape of each of the plurality of light emitting elements.

公开(公告)号：US11424388B2

公开(公告)日：2022-08-23

申请号：US16562791

申请日：2019-09-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Jinjoo Park ,  Joohun Han ,  Kyungwook Hwang ,  Sungjin Kang ,  Junghun Park

IPC: H01L33/46 ,  H01L25/16

Abstract: Provided is a light-emitting device including a substrate, a light-emitting pattern provided on the substrate, a first reflection film provided between the light-emitting pattern and the substrate, a second reflection film provided on a side surface of the light-emitting pattern, and a passivation film provided between the light-emitting pattern and the second reflection film, wherein the second reflection film is electrically connected to the light-emitting pattern, and a portion of light generated from the light-emitting pattern is emitted through an upper surface of the light-emitting pattern after being reflected by at least one of the first reflection film and the second reflection film.

公开(公告)号：US20220246584A1

公开(公告)日：2022-08-04

申请号：US17506135

申请日：2021-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junsik HWANG ,  Seogwoo Hong ,  Kyungwook Hwang ,  Hyunjoon Kim ,  Joonyong Park

IPC: H01L25/075 ,  H01L33/00 ,  H01L21/68 ,  G09G3/32 ,  H01L21/683

Abstract: A display transferring structure includes a transferring substrate including a mold including a plurality of recesses, and a plurality of protrusions provided on an outer surface of the mold connected to the plurality of recesses; and micro semiconductor chips arranged in the recesses. When the micro semiconductor chips are wet aligned, by such protrusions, sliding of the micro semiconductor chips toward the inside of the recesses may be improved.

公开(公告)号：US20250151474A1

公开(公告)日：2025-05-08

申请号：US19009427

申请日：2025-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seogwoo Hong ,  Hyunjoon Kim ,  Joonyong Park ,  Kyungwook Hwang ,  Junsik Hwang

IPC: H10H20/831 ,  H10H29/14

Abstract: Provided is a light-emitting device including a body including a first semiconductor layer, an active layer, and a second semiconductor layer, a first electrode and a second electrode provided on a first surface of the body, the first electrode and the second electrode being in contact with the first semiconductor layer and the second semiconductor layer, respectively, and a third electrode and a fourth electrode provided on a second surface of the body, the third electrode and the fourth electrode being in contact with the first semiconductor layer and the second semiconductor layer, respectively.

公开(公告)号：US12283646B2

公开(公告)日：2025-04-22

申请号：US17531210

申请日：2021-11-19

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Kyungwook Hwang ,  Ho Won Jang ,  Junsik Hwang

IPC: H01L33/38 ,  H01L27/15 ,  H01L33/00 ,  H01L33/40

Abstract: An LED device includes a light emission layer including a first semiconductor layer including a first surface and a second surface facing the first surface, the second surface having an area larger than an area of the first surface, an active layer on the first surface, and a second semiconductor layer on the active layer, an insulating layer on the first surface, the insulating layer defining an open region of the first semiconductor layer, a first electrode that contacts the first semiconductor layer via the open region, and a second electrode on the second semiconductor layer and contacting the second semiconductor layer.

公开(公告)号：US20250022927A1

公开(公告)日：2025-01-16

申请号：US18738877

申请日：2024-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  FOUNDATION OF SOONGSIL UNIVERSITY-INDUSTRY COOPERATION

Inventor： Youngtek OH ,  Geonwook Yoo ,  Kyungwook Hwang ,  Changkun Park ,  Sanghoon Song ,  Minjae Yeom ,  Gyuhyung Lee ,  Junsik Hwang

IPC: H01L29/417 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778 ,  H01L33/00

Abstract: A semiconductor device includes a channel layer including a first group III-V semiconductor material; a barrier layer provided on an upper surface of the channel layer, the barrier layer including a second group III-V semiconductor material that is different than the first group III-V semiconductor material; a plurality of sources/drains spaced apart from each other on an upper surface of the barrier layer; a gate insulating layer covering the upper surface of the barrier layer and upper surfaces of the plurality of sources/drains; a gate provided on an upper surface of the gate insulating layer, the gate not overlapping the plurality of sources/drains; a plurality of source/drain electrodes electrically connected to corresponding sources/drains among the plurality of sources/drains; and a gate electrode electrically connected to the gate, wherein the plurality of source/drain electrodes has a diagonally symmetrical arrangement.

公开(公告)号：US11769855B2

公开(公告)日：2023-09-26

申请号：US17194942

申请日：2021-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook Hwang ,  Junsik Hwang ,  Seogwoo Hong

IPC: H01L33/04 ,  H01L25/075 ,  H01L33/32 ,  H01L33/62 ,  H01L33/14 ,  H01L33/16 ,  H01L33/12 ,  H01L33/50

CPC classification number: H01L33/04 ,  H01L25/0753 ,  H01L33/12 ,  H01L33/14 ,  H01L33/16 ,  H01L33/32 ,  H01L33/62 ,  H01L33/50

Abstract: Provided is a micro light emitting device and a display apparatus having the micro light emitting device. The micro light emitting device includes a first-type semiconductor layer provided on a substrate, a superlattice layer provided on the first-type semiconductor layer, a current blocking layer provided on a side portion of the superlattice layer, an active layer provided on the superlattice layer and the current blocking layer, and a second-type semiconductor layer provided on the active layer.

公开(公告)号：US11764095B2

公开(公告)日：2023-09-19

申请号：US17324609

申请日：2021-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook Hwang ,  Junsik Hwang

IPC: H01L21/683 ,  H01L25/075 ,  H01L33/50 ,  H01L33/52 ,  H01L33/62

CPC classification number: H01L21/6835 ,  H01L25/0753 ,  H01L33/50 ,  H01L33/52 ,  H01L33/62 ,  H01L2221/68309 ,  H01L2221/68313 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2933/005 ,  H01L2933/0041 ,  H01L2933/0066

Abstract: A wet alignment method for a micro-semiconductor chip and a display transfer structure are provided. The wet alignment method for a micro-semiconductor chip includes: supplying a liquid to a transfer substrate including a plurality of grooves; supplying the micro-semiconductor chip onto the transfer substrate; scanning the transfer substrate by using an absorber capable of absorbing the liquid. According to the wet alignment method, the micro-semiconductor chip may be transferred onto a large area.

公开(公告)号：US11676848B2

公开(公告)日：2023-06-13

申请号：US17736676

申请日：2022-05-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunjoon Kim ,  Kyungwook Hwang

IPC: H01L21/683 ,  H01L25/075 ,  H01L33/20 ,  H01L33/62

CPC classification number: H01L21/6835 ,  H01L25/0753 ,  H01L33/20 ,  H01L33/62 ,  H01L2221/68309 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2933/0066

Abstract: A method of aligning micro light emitting elements includes supplying the plurality of micro light emitting elements on a substrate including a plurality of grooves having different shapes, the plurality of micro light emitting elements being configured to be inserted exclusively and respectively into the plurality of grooves; respectively inserting the plurality of micro light emitting elements into the plurality of grooves; and aligning the plurality of micro light emitting elements, wherein at least one groove of the plurality of grooves has a shape that is different from a shape of a respective micro light emitting element inserted into the at least one groove.

公开(公告)号：US20230128165A1

公开(公告)日：2023-04-27

申请号：US17970223

申请日：2022-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook Hwang ,  Junsik Hwang ,  Dongkyun Kim ,  Dongho Kim ,  Hyunjoon Kim ,  Joonyong Park ,  Seogwoo Hong

IPC: H01L25/075 ,  H01L33/00

Abstract: Provided is a micro semiconductor chip transfer substrate including a base substrate, guide rails provided on the base substrate extending in a direction parallel to each other and spaced apart from each other, and a plurality of grooves provided in the base substrate between the guide rails and configured to accommodate micro semiconductor chips.