公开(公告)号：US20160247852A1

公开(公告)日：2016-08-25

申请号：US15143909

申请日：2016-05-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong Wan JIN ,  Kyu Sik KIM ,  Kyung Bae PARK ,  Kwang Hee LEE ,  Dong-Seok LEEM ,  Deukseok CHUNG

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636

Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device configured to sense light in a blue wavelength region and at least one second photo-sensing device configured to sense light in a red wavelength region, a color filter layer on the semiconductor substrate and including a blue color filter configured to selectively absorb light in a blue wavelength region and a red color filter configured to selectively absorb light in a red wavelength region, and a third photo-sensing device on the color filter layer and including a pair of electrodes facing each other, and a photoactive layer between the pair of electrodes and configured to selectively absorb light in a green wavelength region.

公开(公告)号：US20160233351A1

公开(公告)日：2016-08-11

申请号：US14744938

申请日：2015-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong Heon KIM ,  Dongjin YUN ,  Sung HEO ,  Kyu Sik KIM ,  Satoh RYUICHI ,  Gyeongsu PARK ,  Hyung-Ik LEE

IPC: H01L31/0224 ,  H01L31/18 ,  H01L27/146

CPC classification number: H01L31/022408 ,  H01L31/18 ,  H01L51/0046 ,  H01L51/0077 ,  H01L51/4253 ,  Y02E10/549 ,  Y02P70/521

Abstract: An optoelectronic device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode, and a buffer layer between at least one of the photoelectric conversion layer and the first electrode, and the photoelectric conversion layer and the second electrode, the buffer layer including one of MoOx1 (2.58≦x1

Abstract translation: 光电子器件包括彼此面对的第一电极和第二电极，第一电极和第二电极之间的光电转换层，以及光电转换层和第一电极中的至少一个之间的缓冲层，以及光电转换 所述缓冲层包括MoOx1（2.58≤x1<3.0），ZnOx2（1.0≤x2<2.0），TiOx3（1.5≤x3<2.0），VOx4（1.5≤x4<2.0），TaOx5（ 1.0≤x5<2.5），WOx6（2.0

公开(公告)号：US20160227194A1

公开(公告)日：2016-08-04

申请号：US15005065

申请日：2016-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyu Sik KIM ,  Yong Hwa PARK ,  Ryuichi SATOH ,  Jang Woo YOU

IPC: H04N13/02 ,  H01L51/44 ,  H01L27/30 ,  H04N5/225 ,  H04N5/33

CPC classification number: H04N13/239 ,  G01S7/4816 ,  G01S17/023 ,  G01S17/08 ,  G01S17/89 ,  H01L27/307 ,  H04N5/2256 ,  H04N5/2258 ,  H04N5/33 ,  H04N5/332 ,  H04N9/045 ,  H04N13/25 ,  H04N13/254 ,  H04N13/257 ,  H04N13/271 ,  H04N13/296

Abstract: An optical imaging system for a three-dimensional image acquisition apparatus includes an object lens which focuses light, a first image sensor which senses light in a visible light band of the light focused by the object lens, and a second image sensor which senses light in an infrared ray band of light transmitted through the first image sensor. A three-dimensional image acquisition apparatus includes the optical imaging system for a three-dimensional image acquisition apparatus.

Abstract translation: 一种用于三维图像获取装置的光学成像系统包括：聚焦光的物镜，感测由物镜聚焦的光的可见光带中的光的第一图像传感器和感测由物镜聚焦的光的第二图像传感器 通过第一图像传感器传输的光的红外线带。 三维图像获取装置包括用于三维图像获取装置的光学成像系统。

公开(公告)号：US20150200226A1

公开(公告)日：2015-07-16

申请号：US14560920

申请日：2014-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong Wan JIN ,  Kyu Sik KIM ,  Kyung Bae PARK ,  Kwang Hee LEE ,  Dong-Seok LEEM ,  Deukseok CHUNG

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14636

Abstract: An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device configured to sense light in a blue wavelength region and at least one second photo-sensing device configured to sense light in a red wavelength region, a color filter layer on the semiconductor substrate and including a blue color filter configured to selectively absorb light in a blue wavelength region and a red color filter configured to selectively absorb light in a red wavelength region, and a third photo-sensing device on the color filter layer and including a pair of electrodes facing each other, and a photoactive layer between the pair of electrodes and configured to selectively absorb light in a green wavelength region.

Abstract translation: 图像传感器包括集成有至少一个第一光感测装置的半导体衬底，该第一光感测装置被配置为感测蓝色波长区域中的光，以及至少一个第二光感测装置，被配置为感测红色波长区域中的光，滤色器层 半导体衬底并且包括被配置为选择性地吸收蓝色波长区域中的光的蓝色滤色器和被配置为选择性地吸收红色波长区域中的光的红色滤色器以及滤色器层上的第三感光装置，并且包括 一对电极彼此面对，以及一对电极之间的光活性层，并且被配置为选择性地吸收绿色波长区域中的光。

公开(公告)号：US20140239271A1

公开(公告)日：2014-08-28

申请号：US14044315

申请日：2013-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Seok LEEM ,  Kyu Sik KIM ,  Kyung Bae PARK ,  Kwang Hee LEE ,  Seon-Jeong LIM

IPC: H01L31/0232 ,  H01L51/44

CPC classification number: H01L51/442 ,  H01L27/307 ,  H01L51/4253 ,  H01L51/4273 ,  H01L2251/308 ,  Y02E10/549 ,  Y02P70/521

Abstract: A photoelectronic device includes a first electrode, a second electrode facing the first electrode, an active layer between the first electrode and the second electrode, and an auxiliary layer between the first electrode and the active layer, the auxiliary layer including a first auxiliary layer including a metal oxide and a metal and a second auxiliary layer including a first organic material having a HOMO energy level of greater than or equal to about 6.0 eV.

Abstract translation: 光电子器件包括第一电极，面对第一电极的第二电极，第一电极和第二电极之间的有源层，以及在第一电极和有源层之间的辅助层，辅助层包括第一辅助层，包括 金属氧化物和金属，以及包括HOMO能级大于或等于约6.0eV的第一有机材料的第二辅助层。