公开(公告)号：US10367024B2

公开(公告)日：2019-07-30

申请号：US15623635

申请日：2017-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungjoo Nah ,  Jung-Chak Ahn ,  Kyung-Ho Lee

IPC: H01L27/146

Abstract: A semiconductor device includes a light-receiving element which outputs electric charges in response to incident light, and a drive transistor which is gated by an output of the light-receiving element to generate a source-drain current in proportion to the incident light, wherein the drive transistor include a first gate electrode, a first channel region which is disposed under the first gate electrode, first source-drain regions which are disposed at respective ends of the first channel region and that have a first conductivity type, and a first channel stop region which is disposed on a side of the first channel region, and that separates the light-receiving element and the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type.

公开(公告)号：US09443898B2

公开(公告)日：2016-09-13

申请号：US14595336

申请日：2015-01-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Sun Oh ,  Yi-Tae Kim ,  Jung-Chak Ahn ,  Kyung-Ho Lee ,  Jun-Suk Lee

IPC: H01L29/49 ,  H01L27/146 ,  H04N5/357 ,  H04N5/3745

CPC classification number: H01L27/14641 ,  H01L27/14603 ,  H04N5/357 ,  H04N5/3745 ,  H04N5/37457

Abstract: An image sensor includes first pixels and a first source follower transistor, which are disposed adjacent to each other in a first pixel area in a column direction, and second pixels and a second source follower transistor, which are formed in a second pixel area adjacent to the first pixel area in a row direction by the same number of the first pixels, wherein when the first pixels share the first source follower transistor and the second pixels share the second source follower transistor, while pixels selected from the same row are activated, the first source follower transistor and the second source follower transistor being activated are disposed so that locations thereof have a diagonal symmetry.

Abstract translation: 图像传感器包括在列方向上的第一像素区域中彼此相邻布置的第一像素和第一源极跟随器晶体管，以及第二像素和第二源极跟随器晶体管，其形成在与第二像素区域相邻的第二像素区域中 第一像素区域在行方向上具有相同数量的第一像素，其中当第一像素共享第一源极跟随器晶体管并且第二像素共享第二源极跟随器晶体管时，当从相同行选择的像素被激活时， 第一源极跟随器晶体管和第二源极跟随器晶体管被激活，使得它们的位置具有对角对称性。

公开(公告)号：US09385157B2

公开(公告)日：2016-07-05

申请号：US14633381

申请日：2015-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Woo Jung ,  Jung-Chak Ahn ,  Hee-Geun Jeong

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14689

Abstract: A pixel of an image sensor includes a photoelectric conversion region formed in a semiconductor substrate, a floating diffusion region formed in the semiconductor substrate, the floating diffusion region being spaced apart from the photoelectric conversion region, a vertical transfer gate extending from a first surface of the semiconductor substrate into a recess in the semiconductor substrate, and configured to form a transfer channel between the photoelectric conversion region and the floating diffusion region, and an impurity region surrounding the recess. The impurity region has a first impurity concentration at a region adjacent to a side of the recess, and a second impurity concentration higher than the first impurity concentration at a region adjacent to the bottom of the recess.

Abstract translation: 图像传感器的像素包括形成在半导体衬底中的光电转换区域，形成在半导体衬底中的浮动扩散区域，浮动扩散区域与光电转换区域间隔开，垂直传输栅极从第一表面延伸 所述半导体基板成为所述半导体基板的凹部，并且被配置为在所述光电转换区域和所述浮动扩散区域之间形成传输沟道，以及围绕所述凹部的杂质区域。 所述杂质区在与所述凹部的一侧相邻的区域具有第一杂质浓度，并且在与所述凹部的底部相邻的区域处具有高于所述第一杂质浓度的第二杂质浓度。

公开(公告)号：US20160056200A1

公开(公告)日：2016-02-25

申请号：US14615536

申请日：2015-02-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Wook Lee ,  Yi-Tae Kim ,  Jung-Chak Ahn ,  Young-Woo Jung

IPC: H01L27/146 ,  H04N5/3745

CPC classification number: H04N5/3745 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14641 ,  H04N5/359 ,  H04N5/37457

Abstract: Provided are unit pixels for image sensors and pixel arrays including the same. The unit pixels include a first pixel including first and second photo diodes which are adjacent to each other, and a first deep trench isolation (DTI) fully surrounding sides of the first and second photo diodes and electrically separating the first pixel from other pixels adjacent to the first pixel. The first pixel includes a second DTI positioned between the first photo diode and the second photo diode and having one side formed to be spaced apart from the first DTI. The first pixel also includes a color filter positioned on the first and second photo diodes and fully overlapping the first and second photo diodes. The first pixel further includes a floating diffusion node electrically connected with the first and second photo diodes. The first and second photo diodes share one floating diffusion node.

Abstract translation: 提供了用于图像传感器和包括其的像素阵列的单位像素。 单位像素包括包括彼此相邻的第一和第二光电二极管的第一像素和完全围绕第一和第二光电二极管的第一深沟槽隔离（DTI），并且将第一像素与与 第一个像素。 第一像素包括位于第一光电二极管和第二光电二极管之间并且具有形成为与第一DTI间隔开的一侧的第二DTI。 第一像素还包括位于第一和第二光电二极管上并与第一和第二光电二极管完全重叠的滤色器。 第一像素还包括与第一和第二光电二极管电连接的浮动扩散节点。 第一和第二光电二极管共享一个浮动扩散节点。

公开(公告)号：US20150108555A1

公开(公告)日：2015-04-23

申请号：US14294413

申请日：2014-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Woo Jung ,  Jung-Chak Ahn ,  Hee-Geun Jeong

IPC: H01L27/146 ,  H01L29/66 ,  H01L21/265 ,  H01L31/18

CPC classification number: H01L21/26586 ,  H01L27/14614 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14689 ,  H01L29/66666 ,  H01L29/78 ,  H01L29/7827

Abstract: In a method of manufacturing an image sensor, a photodiode is formed in a substrate. The substrate is etched to form an opening vertically aligned with the photodiode. A gate insulation layer and a first preliminary polysilicon layer are formed on an inner surface of opening and a front surface of substrate. A first doping process is performed on first preliminary polysilicon layer to form first polysilicon layer, and the first polysilicon layer in the opening is uniformly doped with first conductivity type impurities. A second preliminary polysilicon layer is formed on first polysilicon layer. A second doping process is performed on second preliminary polysilicon layer to form second polysilicon layer doped with first conductivity type impurities. The first and second polysilicon layers are patterned to form a buried gate electrode in the opening. The first impurity region is formed at an upper portion of substrate adjacent to buried gate electrode.

Abstract translation: 在制造图像传感器的方法中，在基板中形成光电二极管。 蚀刻衬底以形成与光电二极管垂直对准的开口。 在开口的内表面和基板的前表面上形成栅极绝缘层和第一初步多晶硅层。 在第一初步多晶硅层上进行第一掺杂工艺以形成第一多晶硅层，并且开口中的第一多晶硅层均匀地掺杂有第一导电类型的杂质。 在第一多晶硅层上形成第二初步多晶硅层。 在第二初步多晶硅层上执行第二掺杂工艺以形成掺杂有第一导电类型杂质的第二多晶硅层。 图案化第一和第二多晶硅层，以在开口中形成掩埋栅电极。 第一杂质区形成在与掩埋栅电极相邻的衬底的上部。

公开(公告)号：US08946783B2

公开(公告)日：2015-02-03

申请号：US13766803

申请日：2013-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Chak Ahn

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14818 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/1464

Abstract: An image sensor including a semiconductor layer including a plurality of unit pixels each including a photoelectric conversion device and read devices; and an insulating layer including a light-shielding pattern defining a light-receiving region and a light-shielding region of the semiconductor layer, the insulating layer covering one surface of the semiconductor layer. The semiconductor layer further includes a potential drain region formed adjacent to an interface between the semiconductor layer and an insulating layer in the light-shielding region, wherein electrons generated due to defects occurring at the interface are accumulated in the potential drain region. At least one of the unit pixels in the light-shielding region provides a drain path for draining the electrons accumulated in the potential drain region.

Abstract translation: 一种图像传感器，包括：包括多个单位像素的半导体层，每个单位像素包括光电转换装置和读取装置; 以及绝缘层，所述绝缘层包括限定所述半导体层的光接收区域和遮光区域的遮光图案，所述绝缘层覆盖所述半导体层的一个表面。 半导体层还包括与遮光区域中的半导体层和绝缘层之间的界面相邻形成的电位漏极区域，其中由于在界面处发生的缺陷产生的电子积聚在电位漏极区域中。 遮光区域中的单位像素中的至少一个提供用于排出蓄积在电位漏区域中的电子的漏极路径。

公开(公告)号：US20140048853A1

公开(公告)日：2014-02-20

申请号：US14064812

申请日：2013-10-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Jun Choi ,  Yoon-Dong Park ,  Chris Hong ,  Dae-Lok Bae ,  Jung-Chak Ahn ,  Chang-Rok Moon ,  June-Mo Koo ,  Suk-Pil Kim ,  Hoon-Sang Oh

IPC: H01L27/146

CPC classification number: H01L27/14641 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14687 ,  H01L2224/9212 ,  H01L2224/80896 ,  H01L2224/8203 ,  H01L2224/821 ,  H01L2224/80001 ,  H01L2224/82

Abstract: An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.

Abstract translation: 图像传感器包括：第一基板，包括驱动元件，第一基板上的第一绝缘层和驱动元件;第二基板，包括光电转换元件;以及第二绝缘层，在第二基板上和光电转换元件 。 第二绝缘层的表面位于第一绝缘层的上表面上。 图像传感器包括穿透第二绝缘层和第一绝缘层的一部分的导电连接器。 还公开了形成图像传感器的方法。

公开(公告)号：US20130248954A1

公开(公告)日：2013-09-26

申请号：US13764916

申请日：2013-02-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Chak Ahn

IPC: H01L31/0232 ,  H01L31/02

CPC classification number: H01L31/0232 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/1464 ,  H01L31/02

Abstract: Unit pixels included in an image sensor are provided. The unit pixel including a photoelectric conversion region in a semiconductor substrate, the photoelectric conversion region configured to generate photo-charges corresponding to incident light; a transfer gate on a first surface of the semiconductor substrate, the transfer gate configured to transmit the photo-charges from the photoelectric conversion region to a floating diffusion region in the semiconductor substrate; and a suppression gate on the first surface of the semiconductor substrate, the suppression gate configured to correspond to the photoelectric conversion region, the suppression gate including polysilicon and a negative voltage applied to the suppression gate to reduce dark currents is generated adjacent to the first surface of the semiconductor substrate.

Abstract translation: 提供包括在图像传感器中的单位像素。 所述单位像素包括半导体衬底中的光电转换区域，所述光电转换区域被配置为产生与入射光相对应的光电荷; 在所述半导体衬底的第一表面上的传输栅极，所述传输门被配置为将所述光电荷从所述光电转换区域传输到所述半导体衬底中的浮动扩散区域; 在半导体衬底的第一表面上的抑制栅极，被配置为对应于光电转换区域的抑制栅极，包括多晶硅的抑制栅极和施加到抑制栅极以减小暗电流的负电压在第一表面附近产生 的半导体衬底。