公开(公告)号：US20230290904A1

公开(公告)日：2023-09-14

申请号：US18200399

申请日：2023-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nakhyun KIM ,  Junhee Choi ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/24 ,  H01L25/16 ,  H01L33/32 ,  H01L25/075 ,  H01L29/06

CPC classification number: H01L33/24 ,  H01L25/167 ,  H01L33/32 ,  H01L25/0753 ,  H01L29/0676 ,  H01L33/44

Abstract: A nanorod semiconductor layer having a flat upper surface, a micro-LED including the nanorod semiconductor layer, a pixel plate including the micro-LED , a display device including the pixel plate, and an electronic device including the pixel plate are provided. The nanorod semiconductor layer includes: a main body; and an upper end formed from the main body, wherein the upper end includes: a first inclined surface; a second inclined surface facing the first inclined surface; and a flat upper surface between the first inclined surface and the second inclined surface, and a width of the upper end becomes narrower in an upward direction, and when a length of the upper end protruded from the main body (a thickness of the upper end) is L1, an inclination angle between a surface extending parallel to a surface selected from the first and second inclined surfaces and the flat upper surface is β, and a width of the main body is D, a width D1 of the flat upper surface satisfies Equation 1.


D1=D−(2×L1×tanβ)   

公开(公告)号：US11705479B2

公开(公告)日：2023-07-18

申请号：US17400354

申请日：2021-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Sungjin Kang ,  Kiho Kong ,  Junghun Park ,  Jinjoo Park ,  Joohun Han ,  Kyungwook Hwang

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/14 ,  H01L33/22 ,  H01L33/40 ,  H01L33/42 ,  H01L33/50 ,  H01L33/60

CPC classification number: H01L27/156 ,  H01L33/0093 ,  H01L33/145 ,  H01L33/22 ,  H01L33/405 ,  H01L33/42 ,  H01L33/504 ,  H01L33/60 ,  H01L2933/0016 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0091

Abstract: Provided are a display apparatus and a method of manufacturing the same. The display apparatus includes a support substrate, a driving layer provided on the support substrate and including a driving element configured to apply power to a pixel electrode, and a light-emitting layer provided on the driving layer.

公开(公告)号：US20230143907A1

公开(公告)日：2023-05-11

申请号：US17720872

申请日：2022-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Kiho Kong ,  Nakhyun Kim ,  Joosung Kim ,  Younghwan Park ,  Junghun Park ,  Dongchul Shin ,  Eunsung Lee ,  Joohun Han

IPC: H01L33/04 ,  H01L27/15 ,  H01L33/24 ,  H01L33/44

CPC classification number: H01L33/04 ,  H01L27/156 ,  H01L33/24 ,  H01L33/44

Abstract: Provided is an epitaxy structure including a substrate having an upper surface, the upper surface having a single crystal structure, a two-dimensional material layer disposed on the upper surface of the substrate, and a plurality of nanorod light emitting devices disposed on an upper surface of the two-dimensional material layer, each of the plurality of nanorod light emitting devices having a nanorod shape extending in a vertical direction, wherein each of the plurality of nanorod light emitting devices includes a light emitting nanorod, and a passivation film disposed adjacent to a sidewall of the light emitting nanorod, the passivation film having insulation.

公开(公告)号：US20230062456A1

公开(公告)日：2023-03-02

申请号：US17982164

申请日：2022-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Jinjoo PARK ,  Junhee Choi ,  Kiho Kong ,  Joohun Han ,  Nakhyun Kim ,  Junghun Park

IPC: H01L29/778 ,  H01L29/66 ,  H01L27/12 ,  H01L27/15

Abstract: A semiconductor device includes a substrate including a first region and a second region adjacent to the first region, the first and the second regions being disposed in a first direction parallel to an upper surface of the substrate; an etch-stop layer disposed on the first region and the second region; a separation layer disposed on an upper portion of the etch-stop layer, the separation layer being disposed on the first region; a high-electron-mobility transistor (HEMT) element disposed on an upper portion of the separation layer in a second direction perpendicular to an upper surface of the substrate; a light-emitting element disposed on the second region between the substrate and the etch-stop layer; and a plurality of first insulating patterns covering side surfaces of the HEMT element, the plurality of first insulating patterns extending to the etch-stop layer.

公开(公告)号：US11508820B2

公开(公告)日：2022-11-22

申请号：US17100340

申请日：2020-11-20

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  iBeam Materials, Inc.

Inventor： Junhee Choi ,  Joohun Han ,  Vladimir Matias

IPC: H01L21/00 ,  H01L29/16 ,  H01L29/04 ,  H01L21/02

Abstract: A single crystal semiconductor structure includes: an amorphous substrate; a single crystal semiconductor layer provided on the amorphous substrate; and a thin orienting film provided between the amorphous substrate and the single crystal semiconductor layer, wherein the thin orienting film is a single crystal thin film, and the thin orienting film has a non-zero thickness that is equal to or less than 10 times a critical thickness hc.

公开(公告)号：US20210375983A1

公开(公告)日：2021-12-02

申请号：US17400354

申请日：2021-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee CHOI ,  Sungjin Kang ,  Kiho Kong ,  Junghun Park ,  Jinjoo Park ,  Joohun Han ,  Kyungwook Hwang

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/14 ,  H01L33/22 ,  H01L33/40 ,  H01L33/42 ,  H01L33/50 ,  H01L33/60

Abstract: Provided are a display apparatus and a method of manufacturing the same. The display apparatus includes a support substrate, a driving layer provided on the support substrate and including a driving element configured to apply power to a pixel electrode, and a light-emitting layer provided on the driving layer.

公开(公告)号：US12107186B2

公开(公告)日：2024-10-01

申请号：US18322075

申请日：2023-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Nakhyun Kim ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/24 ,  H01L25/075 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/24 ,  H01L25/0753 ,  H01L33/32 ,  H01L33/0075

Abstract: A semiconductor light emitting diode (LED) and a method of manufacturing the same are provided. The LED includes a first semiconductor layer; a plurality of active elements spaced apart on the first semiconductor layer and each having a width less than a width of the first semiconductor layer; and a second semiconductor layer disposed on the plurality of active elements.

公开(公告)号：US12046700B2

公开(公告)日：2024-07-23

申请号：US18238390

申请日：2023-08-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee Choi ,  Nakhyun Kim ,  Jinjoo Park ,  Joohun Han

IPC: H01L33/24 ,  H01L27/15 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40

CPC classification number: H01L33/24 ,  H01L27/156 ,  H01L33/0025 ,  H01L33/0062 ,  H01L33/06 ,  H01L33/145 ,  H01L33/30 ,  H01L33/40

Abstract: Provided is a nanorod light-emitting device including a first semiconductor layer doped with a first conductive type impurity, an emission layer disposed above the first semiconductor layer, a second semiconductor layer disposed above the emission layer and doped with a second conductive type impurity that is electrically opposite to the first conductive type impurity, a conductive layer disposed between at least one of a center portion of a lower surface of the emission layer and the first semiconductor layer and a center portion of an upper surface of the emission layer and the second semiconductor layer, and a current blocking layer surrounding a sidewall of the conductive layer.

公开(公告)号：US11990563B2

公开(公告)日：2024-05-21

申请号：US17197326

申请日：2021-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohun Han ,  Junhee Choi ,  Nakhyun Kim ,  Dongho Kim ,  Jinjoo Park

IPC: H01L33/08 ,  H01L27/15 ,  H01L33/00 ,  H01L33/14 ,  H01L33/30

CPC classification number: H01L33/145 ,  H01L27/156 ,  H01L33/0062 ,  H01L33/0095 ,  H01L33/30

Abstract: A nanorod light emitting device, a method of manufacturing the same, and a display apparatus including the nanorod light emitting device are provided. The nanorod light emitting device includes a first semiconductor layer doped with a first conductivity type, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type that is electrically opposite to the first conductivity type, wherein a distance between a lower surface of the first semiconductor layer and an upper surface of the second semiconductor layer is in a range of about 2 μm to about 10 μm, wherein a difference between a diameter of the upper surface of the second semiconductor layer and the lower surface of the first semiconductor layer is 10% or less of a diameter of the upper surface of the second semiconductor layer.

公开(公告)号：US11923195B2

公开(公告)日：2024-03-05

申请号：US17352851

申请日：2021-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  iBeam Materials, Inc.

Inventor： Junhee Choi ,  Vladmir Matias ,  Joohun Han

IPC: H01L21/02

CPC classification number: H01L21/02502 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02496 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02516 ,  H01L21/02598 ,  H01L21/02192 ,  H01L21/02266 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631

Abstract: A single crystal semiconductor includes a strain compensation layer; an amorphous substrate disposed on the strain compensation layer; a lattice matching layer disposed on the amorphous substrate and including two or more single crystal layers; and a single crystal semiconductor layer disposed on the lattice matching layer, the lattice matching layer including a direction control film disposed on the amorphous substrate and including a single crystal structure, and a buffer layer including a material different from that of the direction control film, the buffer layer being disposed on the direction control film and including a single crystal structure.