公开(公告)号：US10304847B2

公开(公告)日：2019-05-28

申请号：US15923408

申请日：2018-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Min Lee ,  Hoo-Sung Cho ,  Jeong-Seok Nam ,  Jong-Min Lee ,  Yong-Joon Choi

IPC: H01L27/11565 ,  H01L27/11582 ,  H01L23/544 ,  H01L27/11573 ,  H01L27/11575 ,  H01L23/522 ,  H01L23/528 ,  H01L27/1157 ,  H01L21/768

Abstract: A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a first direction that is vertical to a top surface of the substrate, a plurality of gate lines stacked on top of each other on the substrate, a plurality of wiring over the gate lines and electrically connected to the gate lines, and an identification pattern on the substrate at the same level as a level of at least one of the wirings. The gate lines surround the channels. The gate lines are spaced apart from each other along the first direction.

公开(公告)号：US20180012955A1

公开(公告)日：2018-01-11

申请号：US15712365

申请日：2017-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Min Lee ,  Jongryul Jun ,  Eun A Kim ,  Jung-Bum Lim

IPC: H01L49/02 ,  H01L27/108 ,  H01L27/08

CPC classification number: H01L28/90 ,  H01L27/0805 ,  H01L27/10808 ,  H01L27/10817 ,  H01L27/10847 ,  H01L27/10852 ,  H01L28/82 ,  H01L28/86 ,  H01L28/88 ,  H01L28/92

Abstract: Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting structure that structurally supports the first conductive patterns and the second conductive patterns. The decoupling structures may also include a common electrode disposed between ones of the first conductive patterns and between ones of the second conductive patterns. The first conductive patterns and the common electrode are electrodes of a first capacitor, and the second conductive patterns and the common electrode are electrodes of a second capacitor. The unitary supporting structure may include openings when viewed from a plan perspective. The first conductive patterns and the second conductive patterns are horizontally spaced apart from each other with a separation region therebetween, and none of the openings extend into the separation region.

公开(公告)号：US20170025416A1

公开(公告)日：2017-01-26

申请号：US15067705

申请日：2016-03-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Hoon Han ,  Jong-Min Lee ,  Dong-Wan Kim ,  Ju-Ik Lee

IPC: H01L27/108 ,  H01L29/423 ,  H01L49/02

CPC classification number: H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L28/60 ,  H01L28/86 ,  H01L29/4236

Abstract: A capacitor structure includes a plurality of lower electrodes, a support pattern structure, a dielectric layer, and an upper electrode. The lower electrodes are formed on a substrate. The support pattern structure is formed between the lower electrodes, and includes a lower support pattern and an upper support pattern structure over the lower support pattern. The upper support pattern structure includes a plurality of upper support patterns spaced apart from each other in a direction substantially perpendicular to a top surface of the substrate. The dielectric layer is formed on the lower electrodes and the support pattern structure. The upper electrode is formed on the dielectric layer. A sum of thicknesses of the plurality of upper support patterns in the direction substantially perpendicular to the top surface of the substrate is about 35% to about 85% of a total thickness of the upper support pattern structure.

Abstract translation: 电容器结构包括多个下电极，支撑图案结构，电介质层和上电极。 下电极形成在基板上。 支撑图案结构形成在下电极之间，并且在下支撑图案上方包括下支撑图案和上支撑图案结构。 上支撑图案结构包括在基本上垂直于基板的顶表面的方向上彼此间隔开的多个上支撑图案。 电介质层形成在下电极和支撑图案结构上。 上电极形成在电介质层上。 多个上支撑图案在基本上垂直于基板顶表面的方向上的厚度之和为上支撑图案结构的总厚度的约35％至约85％。