公开(公告)号：US11746289B2

公开(公告)日：2023-09-05

申请号：US17407260

申请日：2021-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  POSTECH Research and Business Development Foundation

Inventor： Yong Wook Kim ,  Yong Ju Kwon ,  Sungjee Kim ,  Jihyun Min ,  Yuho Won ,  Eun Joo Jang ,  Hyo Sook Jang ,  Eunjae Lee ,  Kyuhyun Bang ,  Anastasia Agnes ,  Jeongmin Kim

IPC: C09K11/72 ,  C09K11/70 ,  C09K11/08 ,  C01B25/08 ,  B82Y40/00 ,  B82Y20/00

CPC classification number: C09K11/72 ,  C01B25/087 ,  C09K11/0883 ,  C09K11/70 ,  B82Y20/00 ,  B82Y40/00 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2004/04 ,  C01P2004/50 ,  C01P2004/64

Abstract: The invention relates to InP-based nanoclusters that include indium and phosphorus and further include zinc, chlorine, or a combination thereof, and to a method of preparing the InP-based nanoparticles including heating the InP-based nanoclusters in the presence of zinc, chlorine, or a combination thereof.

公开(公告)号：US11702593B2

公开(公告)日：2023-07-18

申请号：US17186434

申请日：2021-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun Min ,  Soo Kyung Kwon ,  Seon-Yeong Kim ,  Yong Wook Kim ,  Ji-Yeong Kim ,  Eun Joo Jang ,  Sungwoo Hwang

IPC: C09K11/88 ,  C09K11/02 ,  H10K50/115 ,  H10K59/38 ,  B82Y40/00 ,  F21V8/00 ,  G02F1/1335 ,  B82Y20/00

CPC classification number: C09K11/883 ,  C09K11/02 ,  H10K50/115 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00 ,  G02B6/005 ,  G02F1/133614 ,  G02F2202/36

Abstract: A quantum dot including a core and a shell disposed on an outer surface of the core. The core includes a first semiconductor nanocrystal including a Group II-VI compound. The shell includes a second semiconductor nanocrystal. An effective mass of the second semiconductor nanocrystal is about 0.5 times to about 2.0 times an effective mass of the first semiconductor nanocrystal and the quantum dot does not include cadmium, lead, mercury, or a combination thereof.

公开(公告)号：US11142693B2

公开(公告)日：2021-10-12

申请号：US16850119

申请日：2020-04-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun Min ,  Eun Joo Jang ,  Yong Wook Kim

IPC: C09K11/00 ,  H01B1/00 ,  H01L27/00 ,  C09K11/88 ,  C09K11/02 ,  C09K11/08 ,  H01L27/32 ,  H01B1/06 ,  B82Y20/00 ,  B82Y40/00 ,  G02F1/1335 ,  G02F1/13357

Abstract: A nanoplatelet including a two-dimensional template including a first semiconductor nanocrystal; and a first shell including a second semiconductor nanocrystal disposed on a surface of the two-dimensional template, the second semiconductor nanocrystal having a composition different from the first semiconductor nanocrystal, wherein the second semiconductor nanocrystal includes a Group III-V compound, and wherein the nanoplatelet does not include cadmium.

公开(公告)号：US11142685B2

公开(公告)日：2021-10-12

申请号：US16245544

申请日：2019-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Nayoun Won ,  Sungwoo Hwang ,  Eun Joo Jang ,  Soo Kyung Kwon ,  Yong Wook Kim ,  Jihyun Min ,  Garam Park ,  Shang Hyeun Park ,  Hyo Sook Jang ,  Shin Ae Jun ,  Yong Seok Han

IPC: H01L51/50 ,  C09K11/08 ,  C08L57/10 ,  G02F1/13357 ,  H01L27/32 ,  C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  C09K11/88 ,  H05B33/14 ,  B82Y40/00 ,  B82Y20/00 ,  G02F1/1335

Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.

公开(公告)号：US11011672B2

公开(公告)日：2021-05-18

申请号：US16786004

申请日：2020-02-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Garam Park ,  Tae Hyung Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Shin Ae Jun ,  Yongwook Kim ,  Taekhoon Kim ,  Jihyun Min ,  Yuho Won

IPC: H01L33/04 ,  C09K11/02 ,  C09K11/61 ,  C09K11/70 ,  C09K11/88 ,  H01L33/24 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/34

Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.

公开(公告)号：US10074770B2

公开(公告)日：2018-09-11

申请号：US15386512

申请日：2016-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Garam Park ,  Tae Hyung Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Shin Ae Jun ,  Yongwook Kim ,  Taekhoon Kim ,  Jihyun Min ,  Yuho Won

IPC: H01L29/06 ,  H01L33/04 ,  H01L33/24 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/34 ,  C09K11/02 ,  C09K11/61 ,  C09K11/70 ,  C09K11/88

CPC classification number: H01L33/04 ,  C09K11/025 ,  C09K11/615 ,  C09K11/70 ,  C09K11/883 ,  H01L33/24 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/34

Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.

公开(公告)号：US12146086B2

公开(公告)日：2024-11-19

申请号：US18310830

申请日：2023-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Kyung Kwon ,  Yong Wook Kim ,  Jihyun Min ,  Eun Joo Jang

IPC: C09K11/02 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/62 ,  C09K11/88 ,  G02F1/1335 ,  G02F1/13357 ,  H10K50/115

Abstract: A quantum dot including a core including a quaternary alloy semiconductor nanocrystal and not including cadmium, a composition and a quantum dot polymer composite including the same, and an electronic device including the same. The quaternary alloy semiconductor nanocrystal comprises indium (In), phosphorous (P), zinc (Zn), and selenium (Se), and in the core, a ratio of the zinc with respect to the indium is less than or equal to about 0.5:1 and in the core, a ratio of selenium with respect to zinc is less than or equal to about 0.6:1.

公开(公告)号：US11999887B2

公开(公告)日：2024-06-04

申请号：US18182428

申请日：2023-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun Min ,  Sungwoo Hwang ,  Yong Wook Kim ,  Ji-Yeong Kim ,  Soo Kyung Kwon ,  Seon-Yeong Kim

IPC: C09K11/88 ,  B82Y20/00 ,  B82Y40/00 ,  C01B19/00 ,  C01G9/08 ,  C09K11/56 ,  F21V8/00 ,  H10K50/115 ,  H10K59/12 ,  H10K59/38

CPC classification number: C09K11/883 ,  C01B19/00 ,  C01G9/08 ,  C09K11/565 ,  H10K50/115 ,  H10K59/12 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00 ,  C01P2002/74 ,  C01P2006/60 ,  G02B6/005

Abstract: A core shell quantum dot including a core including a first semiconductor nanocrystal and including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including a zinc chalcogenide, a method of manufacture thereof, and a device including the same are disclosed, wherein the core shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein in an X-ray photoelectron spectrum of the quantum dot, a peak area for Te oxide to a peak area for Te3d5/2 as an area percentage is less than or equal to about 25%.

公开(公告)号：US11987739B2

公开(公告)日：2024-05-21

申请号：US18318053

申请日：2023-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seon-Yeong Kim ,  Soo Kyung Kwon ,  Yong Wook Kim ,  Ji-Yeong Kim ,  Jihyun Min ,  Sungwoo Hwang ,  Eun Joo Jang

IPC: C09K11/88 ,  C01G9/00 ,  C01G9/08 ,  C09K11/06 ,  C09K11/54 ,  C09K11/56 ,  G02F1/13357 ,  H10K59/38 ,  F21V8/00 ,  G02F1/1335

CPC classification number: C09K11/883 ,  C01G9/006 ,  C01G9/08 ,  C09K11/06 ,  C09K11/54 ,  C09K11/565 ,  G02F1/133621 ,  H10K59/38 ,  C01P2004/64 ,  C01P2004/90 ,  C01P2006/60 ,  G02B6/005 ,  G02F1/133614 ,  G02F2202/36

Abstract: A core-shell quantum dot including a core including a first semiconductor nanocrystal, the first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc and selenium, sulfur, or a combination thereof and a production thereof are disclosed, wherein the core-shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein the core-shell quantum dot(s) includes chlorine, wherein in the core-shell quantum dot, a mole ratio of chlorine with respect to tellurium is greater than or equal to about 0.01:1 and wherein a quantum efficiency of the core-shell quantum dot is greater than or equal to about 10%.

公开(公告)号：US11674078B2

公开(公告)日：2023-06-13

申请号：US17401410

申请日：2021-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Kyung Kwon ,  Yong Wook Kim ,  Jihyun Min ,  Eun Joo Jang

IPC: C09K11/02 ,  C09K11/62 ,  H10K50/115 ,  G02F1/13357 ,  B82Y20/00 ,  B82Y40/00 ,  G02F1/1335 ,  H01L51/50

CPC classification number: C09K11/025 ,  C09K11/623 ,  G02F1/133615 ,  G02F1/133617 ,  H01L51/502 ,  B82Y20/00 ,  B82Y40/00 ,  G02F1/133614 ,  G02F2202/36

Abstract: A quantum dot including a core including a quaternary alloy semiconductor nanocrystal and not including cadmium, a composition and a quantum dot polymer composite including the same, and an electronic device including the same.
The quaternary alloy semiconductor nanocrystal comprises indium (In), phosphorous (P), zinc (Zn), and selenium (Se), and in the core, a ratio of the zinc with respect to the indium is less than or equal to about 0.5:1 and in the core, a ratio of selenium with respect to zinc is less than or equal to about 0.6:1.