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    DISPLAY DEVICE
    21.
    发明申请
    DISPLAY DEVICE 审中-公开

    公开(公告)号：US20190386084A1

    公开(公告)日：2019-12-19

    申请号：US16556166

    申请日：2019-08-29

    Applicant: Samsung Display Co., Ltd.

    Inventor： Hye-Hyang PARK ,  Joo-Hee JEON ,  Seung-Ho JUNG ,  Chaun-Gi CHOI ,  Hyeon-Sik KIM ,  Hui-Won YANG ,  Eun-Young LEE

    IPC: H01L27/32 ,  H01L51/00 ,  H01L51/52

    Abstract: A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate insulation layer may be equal to a refractive index of the buffer layer. The switching element may be electrically connected to the light emitting element and may include an active layer and a gate electrode. The active layer may be positioned between the buffer layer and the gate insulation layer and may directly contact at least one of the buffer layer and the gate insulation layer. The gate insulation layer may be positioned between the active layer and the gate electrode and may directly contact at least one of the active layer and the gate electrode.

    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
    23.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES 审中-公开
    半导体器件及制造半导体器件的方法

    公开(公告)号：US20160118503A1

    公开(公告)日：2016-04-28

    申请号：US14842540

    申请日：2015-09-01

    Applicant: Samsung Display Co., Ltd.

    Inventor： Je-Hun LEE ,  Eun-Hyun KIM ,  Sang-Won SHIN ,  Eun-Young LEE

    IPC: H01L29/786 ,  H01L21/443 ,  H01L21/02 ,  H01L29/423 ,  H01L29/66

    Abstract: A semiconductor device may include a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the substrate to cover the gate electrode, an active layer including an oxide semiconductor disposed on the gate insulation layer, an insulating interlayer disposed on the gate insulation layer to cover the active layer, a protection structure including a plurality of metal oxide layers disposed on the insulating interlayer, and a source electrode and a drain electrode disposed on the protection structure.

    Abstract translation: 半导体器件可以包括衬底，设置在衬底上的栅极电极，设置在衬底上以覆盖栅电极的栅极绝缘层，包括设置在栅极绝缘层上的氧化物半导体的有源层，设置在栅绝缘层上的绝缘层 栅绝缘层覆盖有源层，包括设置在绝缘中间层上的多个金属氧化物层的保护结构以及设置在保护结构上的源电极和漏电极。

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