Transparent display devices and methods of manufacturing transparent display devices

    公开(公告)号:US10374022B2

    公开(公告)日:2019-08-06

    申请号:US15498250

    申请日:2017-04-26

    Abstract: A transparent display substrate, a transparent display device, and a method of manufacturing a transparent display device, the substrate including a base substrate including a pixel area and a transmission area; a pixel circuit on the pixel area of the base substrate; an insulation layer covering the pixel circuit on the base substrate; a pixel electrode selectively disposed on the pixel area of the base substrate, the pixel electrode being electrically connected to the pixel circuit at least partially through the insulation layer; and a transmitting layer structure selectively disposed on the transmission area of the base substrate, the transmitting layer structure including at least an inorganic material, the inorganic material consisting essentially of silicon oxynitride.

    Transparent display devices and methods of manufacturing transparent display devices

    公开(公告)号:US10332948B2

    公开(公告)日:2019-06-25

    申请号:US15498250

    申请日:2017-04-26

    Abstract: A transparent display substrate, a transparent display device, and a method of manufacturing a transparent display device, the substrate including a base substrate including a pixel area and a transmission area; a pixel circuit on the pixel area of the base substrate; an insulation layer covering the pixel circuit on the base substrate; a pixel electrode selectively disposed on the pixel area of the base substrate, the pixel electrode being electrically connected to the pixel circuit at least partially through the insulation layer; and a transmitting layer structure selectively disposed on the transmission area of the base substrate, the transmitting layer structure including at least an inorganic material, the inorganic material consisting essentially of silicon oxynitride.

    METHOD OF MANUFACTURING CAPACITOR, METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE CAPACITOR, AND ORGANIC LIGHT EMITTING DISPLAY DEVICE MANUFACTURED BY USING THE METHOD
    25.
    发明申请
    METHOD OF MANUFACTURING CAPACITOR, METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE CAPACITOR, AND ORGANIC LIGHT EMITTING DISPLAY DEVICE MANUFACTURED BY USING THE METHOD 审中-公开
    制造电容器的方法,制造包括电容器的有机发光显示装置的方法和使用该方法制造的有机发光显示装置

    公开(公告)号:US20150318338A1

    公开(公告)日:2015-11-05

    申请号:US14794976

    申请日:2015-07-09

    Abstract: A method of manufacturing an organic light emitting display device includes: providing a capacitor on a substrate; providing a protection layer on the capacitor; providing an organic light emitting diode on the protection layer; and providing an encapsulation layer which encapsulates the organic light emitting diode. The providing the capacitor includes: providing a bottom electrode including an oxide semiconductor, on the substrate; providing an insulation layer on the substrate and overlapping the bottom electrode; annealing the bottom electrode to increase a carrier density of the bottom electrode; and providing an intermediate electrode on the insulation layer and overlapping the bottom electrode.

    Abstract translation: 一种制造有机发光显示装置的方法包括:在基板上设置电容器; 在电容器上提供保护层; 在保护层上提供有机发光二极管; 并提供封装有机发光二极管的封装层。 提供电容器包括:在基板上提供包括氧化物半导体的底部电极; 在衬底上提供绝缘层并与底部电极重叠; 对底部电极进行退火以增加底部电极的载流子密度; 并在绝缘层上提供中间电极并与底部电极重叠。

    Method of manufacturing thin-film transistor, method of manufacturing organic light-emitting display device including the same, and thin-film transistor and organic light-emitting display device manufactured using the methods
    26.
    发明授权
    Method of manufacturing thin-film transistor, method of manufacturing organic light-emitting display device including the same, and thin-film transistor and organic light-emitting display device manufactured using the methods 有权
    制造薄膜晶体管的方法,包括该薄膜晶体管的有机发光显示装置的制造方法以及使用该方法制造的薄膜晶体管和有机发光显示装置

    公开(公告)号:US09153700B2

    公开(公告)日:2015-10-06

    申请号:US14034291

    申请日:2013-09-23

    Abstract: A method of manufacturing a thin-film transistor includes: forming an oxide semiconductor pattern including a first region and a second region on a substrate; forming an insulation film on the substrate to cover the oxide semiconductor pattern; removing the insulation film on the second region through patterning; increasing carrier density of the first region of the oxide semiconductor pattern through an annealing process; forming a gate electrode on the insulation film so that the gate electrode is insulated from the oxide semiconductor pattern and overlaps the second region; and forming a source electrode and a drain electrode to be insulated from the gate electrode and contact the first region.

    Abstract translation: 制造薄膜晶体管的方法包括:在衬底上形成包括第一区域和第二区域的氧化物半导体图案; 在所述基板上形成绝缘膜以覆盖所述氧化物半导体图案; 通过图案去除第二区域上的绝缘膜; 通过退火处理来增加氧化物半导体图案的第一区域的载流子密度; 在所述绝缘膜上形成栅电极,使得所述栅电极与所述氧化物半导体图案绝缘并且与所述第二区域重叠; 以及形成与栅电极绝缘的源电极和漏极,并与第一区接触。

    Backplane for flat panel display apparatus, flat panel display apparatus, and method of manufacturing the backplane
    27.
    发明授权
    Backplane for flat panel display apparatus, flat panel display apparatus, and method of manufacturing the backplane 有权
    平板显示装置的背板,平板显示装置及背板的制造方法

    公开(公告)号:US09048257B2

    公开(公告)日:2015-06-02

    申请号:US14085211

    申请日:2013-11-20

    CPC classification number: H01L29/66742 H01L27/1225 H01L27/1255 H01L2227/323

    Abstract: A backplane includes: a substrate, a pixel electrode, which includes a transparent conductive material, on the substrate, a capacitor first electrode formed on the same layer as the pixel electrode, a first protection layer covering the capacitor first electrode and an upper edge of the pixel electrode, a gate electrode of a thin film transistor (TFT) formed on the first protection layer, a capacitor second electrode formed on the same layer as the gate electrode, a first insulating layer that covers the gate electrode and the capacitor second electrode, a semiconductor layer that is formed on the first insulating layer and includes a transparent conductive material, a second insulating layer covering the semiconductor layer, source and drain electrodes of the TFT that are formed on the second insulating layer, and a third insulating layer that covers the source and drain electrodes and exposes the pixel electrode.

    Abstract translation: 背板包括:衬底,包括透明导电材料的像素电极,在衬底上,形成在与像素电极相同的层上的电容器第一电极,覆盖电容器第一电极的第一保护层和覆盖电容器第一电极的上边缘 像素电极,形成在第一保护层上的薄膜晶体管(TFT)的栅电极,形成在与栅电极相同的层上的电容器第二电极,覆盖栅电极和电容器第二电极的第一绝缘层 形成在所述第一绝缘层上并且包括透明导电材料的半导体层,覆盖所述半导体层的第二绝缘层,形成在所述第二绝缘层上的所述TFT的源电极和漏电极以及第三绝缘层, 覆盖源电极和漏电极并暴露像素电极。

    BACKPLANE FOR FLAT PANEL DISPLAY APPARATUS, FLAT PANEL DISPLAY APPARATUS, AND METHOD OF MANUFACTURING THE BACKPLANE
    28.
    发明申请
    BACKPLANE FOR FLAT PANEL DISPLAY APPARATUS, FLAT PANEL DISPLAY APPARATUS, AND METHOD OF MANUFACTURING THE BACKPLANE 有权
    平板显示装置的背板,平板显示装置及制造背板的方法

    公开(公告)号:US20140080270A1

    公开(公告)日:2014-03-20

    申请号:US14085211

    申请日:2013-11-20

    CPC classification number: H01L29/66742 H01L27/1225 H01L27/1255 H01L2227/323

    Abstract: A backplane includes: a substrate, a pixel electrode, which includes a transparent conductive material, on the substrate, a capacitor first electrode formed on the same layer as the pixel electrode, a first protection layer covering the capacitor first electrode and an upper edge of the pixel electrode, a gate electrode of a thin film transistor (TFT) formed on the first protection layer, a capacitor second electrode formed on the same layer as the gate electrode, a first insulating layer that covers the gate electrode and the capacitor second electrode, a semiconductor layer that is formed on the first insulating layer and includes a transparent conductive material, a second insulating layer covering the semiconductor layer, source and drain electrodes of the TFT that are formed on the second insulating layer, and a third insulating layer that covers the source and drain electrodes and exposes the pixel electrode.

    Abstract translation: 背板包括:衬底,包括透明导电材料的像素电极,在衬底上,形成在与像素电极相同的层上的电容器第一电极,覆盖电容器第一电极的第一保护层和覆盖电容器第一电极的上边缘 像素电极,形成在第一保护层上的薄膜晶体管(TFT)的栅电极,形成在与栅电极相同的层上的电容器第二电极,覆盖栅电极和电容器第二电极的第一绝缘层 形成在所述第一绝缘层上并且包括透明导电材料的半导体层,覆盖所述半导体层的第二绝缘层,形成在所述第二绝缘层上的所述TFT的源电极和漏电极以及第三绝缘层, 覆盖源电极和漏电极并暴露像素电极。

    Organic light emitting display panel

    公开(公告)号:US11257413B2

    公开(公告)日:2022-02-22

    申请号:US17329004

    申请日:2021-05-24

    Abstract: An OLED panel may include a substrate including a first region and a second region disposed along a first direction. A plurality of first pixels are disposed in the first region on the substrate, the first pixels each having a first area, the first pixels each comprising a first unit pixel, a second unit pixel disposed along a second direction from the first unit pixel, and a transmission portion disposed along the first direction from the first unit pixel and the second unit pixel. A plurality of second pixels are disposed in the second region on the substrate, the second pixels each having a second area less than the first area, the second pixels each comprising a third unit pixel. The first unit pixel, the second unit pixel, and the third unit pixel may have substantially the same shape as each other.

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