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    Display device
    22.
    发明授权
    Display device 有权

    公开(公告)号：US11955083B2

    公开(公告)日：2024-04-09

    申请号：US18138123

    申请日：2023-04-24

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jaewoo Lee ,  Yongsu Lee ,  Seung-Jun Lee

    IPC: G09G3/3258

    CPC classification number: G09G3/3258 ,  G09G2300/0819 ,  G09G2300/0861 ,  G09G2310/0202 ,  G09G2310/08 ,  G09G2320/0238

    Abstract: A display device is disclosed that includes a display panel including a pixel and a scan driver to provide a first scan signal to a third scan signal to the pixel. The pixel includes a light emitting element, a first transistor connected between a first voltage line and the light emitting element, a second transistor connected between a data line and a first node, a gate electrode of the second transistor to receive a first scan signal, a third transistor connected between the second node and the first transistor, a gate electrode of the third transistor to receive a second scan signal, and a fourth transistor connected between a first initialization voltage line, which is to receive a first initialization voltage, and the second node, a gate electrode of the fourth transistor to receive a third scan signal. The first to third scan signals include first to third activation sections, and the first to third activation sections have an equal duration.

    Display device
    24.
    发明授权
    Display device 有权

    公开(公告)号：US11455955B2

    公开(公告)日：2022-09-27

    申请号：US17264703

    申请日：2019-03-29

    Applicant: Samsung Display Co., Ltd.

    Inventor： Myounggeun Cha ,  Sanggun Choi ,  Jiyeong Shin ,  Yongsu Lee

    IPC: G09G3/3258 ,  G09G3/3233 ,  G09G3/3225

    Abstract: A display device may include a substrate, an organic light emitting element on the substrate, a pixel circuit between the substrate and the organic light emitting element, electrically connected to the organic light emitting element, and including a first transistor and a second transistor, a first metal layer between the substrate and the pixel circuit, overlapping the first transistor, and configured to receive a first voltage, and a second metal layer between the substrate and the pixel circuit, overlapping the second transistor, and configured to receive a second voltage different from the first voltage.

    Flexible display device
    26.
    发明授权
    Flexible display device 有权

    公开(公告)号：US11257875B2

    公开(公告)日：2022-02-22

    申请号：US16698634

    申请日：2019-11-27

    Applicant: Samsung Display Co., Ltd.

    Inventor： Taehoon Yang ,  Yongsu Lee ,  Sungchul Kim ,  Sunghoon Kim ,  Sungsik Yun ,  Kyoungah Lee

    IPC: H01L27/32 ,  G06F1/16 ,  H01L51/52 ,  G06F3/044 ,  G06F3/041 ,  H01L51/00

    Abstract: A flexible display device includes a display panel layer, a touch sensing layer, a reflection prevention layer, and a window layer. The touch sensing layer is disposed directly on a first display panel surface, a second display panel surface facing the first display panel surface in a thickness direction, or a second base surface of the reflection prevention layer. The reflection prevention layer is disposed directly on the second display panel surface or a first base surface of the touch sensing layer. The window layer is disposed directly on the first base surface or the second base surface.

    DISPLAY APPARATUS INCLUDING THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    29.
    发明申请
    DISPLAY APPARATUS INCLUDING THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20190074304A1

    公开(公告)日：2019-03-07

    申请号：US16106161

    申请日：2018-08-21

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jongchan Lee ,  Jaeseob Lee ,  Woonghee Jeong ,  Taehoon Yang ,  Yongsu Lee

    IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/266

    Abstract: A display apparatus includes: at thin film transistor on a substrate; and a capacitor on the substrate, the capacitor including a first storage electrode and a second storage electrode. The thin film transistor includes: a semiconductor layer on the substrate, including: a channel region in which are disposed: bridged grain lines defined by portions of the semiconductor layer having an amount of a dopant, and semiconductor lines defined by portions of the semiconductor having a dopant amount less than that of the bridged grain lines and forming an interface with the bridged grain lines, and source and drain regions disposed at opposing sides of the channel region;and a gate electrode overlapping the semiconductor layer with a gate insulation film therebetween, the gate electrode including: first gate electrodes corresponding to the semiconductor lines, respectively, and a second gate electrode covering the gate electrodes.

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