公开(公告)号：US11407061B2

公开(公告)日：2022-08-09

申请号：US16698842

申请日：2019-11-27

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-Sung Lee ,  Dong-min Lee ,  Jongoh Seo ,  Byung Soo So

IPC: B23K26/04 ,  B23K26/0622 ,  H01L21/02 ,  H01L21/20 ,  B23K101/40

Abstract: A laser crystallizing apparatus may include a laser light source, an optical system, and an optical module. The laser light source may generate a laser beam. The optical system may convert the laser beam into a line laser beam. The optical module may disperse energy of the line laser beam in a first direction for generating a dispersed line laser beam. The first direction may be perpendicular to a lengthwise direction of the optical module.

公开(公告)号：US11282872B2

公开(公告)日：2022-03-22

申请号：US16808157

申请日：2020-03-03

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-Min Lee ,  Ji-Hwan Kim ,  Jongoh Seo ,  Byung Soo So ,  Dong-Sung Lee ,  Jonghoon Choi

IPC: G02B27/14 ,  H01L27/12 ,  H01L21/02 ,  B23K26/53 ,  H01S3/00 ,  G02B27/12

Abstract: A laser apparatus includes a laser generator configured to generate a first laser beam proceeding along a first direction, and an inversion module configured to convert the first laser beam to a second laser beam proceeding along the first direction, the inversion module including a splitter configured to form a reflected laser beam by partially reflecting the first laser beam, and a transmitted laser beam by partially transmitting the first laser beam, and a prism configured to reflect the reflected laser beam.

公开(公告)号：US20210013281A1

公开(公告)日：2021-01-14

申请号：US16877735

申请日：2020-05-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dongsung Lee ,  Jihwan Kim ,  Jongoh Seo ,  Byungsoo So ,  Dongmin Lee ,  Yeonhee Jeon ,  Jonghoon Choi ,  Byungkyu Son ,  Seunghyun Jang

IPC: H01L27/32 ,  H01L51/56 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

Abstract: A method of manufacturing a thin film transistor includes: removing an oxide film on a surface of an amorphous silicon layer by performing a surface cleaning; and forming an active layer by performing a heat treatment on the amorphous silicon layer, where the amorphous silicon layer is changed into crystalline silicon by the heat treatment.

公开(公告)号：US20190319050A1

公开(公告)日：2019-10-17

申请号：US16381495

申请日：2019-04-11

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaewoo Jeong ,  Taewook Kang ,  Jongoh Seo ,  Byungsoo So

IPC: H01L27/12

Abstract: A display apparatus includes a substrate including a polymer resin. A portion of the substrate including an upper surface of the substrate is doped with 1×1020 to 1×1023 dopants per 1 cm3. A barrier layer is positioned above the upper surface of the substrate. A buffer layer is positioned above the barrier layer. A thin film transistor is positioned above the buffer layer. A display device is electrically connected to the thin film transistor.