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公开(公告)号:US20240355788A1
公开(公告)日:2024-10-24
申请号:US18685475
申请日:2021-08-26
Applicant: LG ELECTRONICS INC.
Inventor: Sungmin PARK , Byoungkwon CHO , Wonseok CHOI
IPC: H01L25/075 , H01L33/22 , H01L33/44 , H01L33/62
CPC classification number: H01L25/0753 , H01L33/22 , H01L33/44 , H01L33/62
Abstract: A semiconductor light emitting device includes a light emitting part, a first electrode including a bonding layer below the light emitting part, a barrier around the bonding layer, a second electrode on the light emitting part, and a passivation layer to surround the light emitting part and the second electrode.
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公开(公告)号:US20240186473A1
公开(公告)日:2024-06-06
申请号:US18285192
申请日:2022-03-31
Applicant: LG DISPLAY CO., LTD. , LG ELECTRONICS INC.
Inventor: Hyeseon EOM , Doohyun YOON , Moonsun LEE , Wonseok CHOI
CPC classification number: H01L33/62 , H01L25/167 , H01L27/124
Abstract: A display device including a semiconductor light emitting device according to an embodiment includes a substrate, first assembly wiring and second assembly wiring alternately arranged on the substrate and spaced apart from each other, a planarization layer disposed on the first assembly wiring and the second assembly wiring and having a first opening, a semiconductor light emitting device disposed inside the first opening and having a first electrode overlapping the first assembled wiring and the second assembled wiring, and an assembly wiring connection pattern that electrically connects the first assembly wiring and the second assembly wiring. And first electrode can be electrically connected to one of the first assembly wiring and the second assembly wiring.
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23.
公开(公告)号:US20230135290A1
公开(公告)日:2023-05-04
申请号:US17798798
申请日:2020-03-23
Applicant: LG ELECTRONICS INC.
Inventor: Wonseok CHOI , Soohyun KIM , Sungmin PARK
Abstract: Discussed is a display device that can include a base unit, a data wire and a gate wire arranged in columns and rows, respectively, and on the base unit to intersect each other, a power wire extending in a same direction as the data wire, thin film transistors connected to the data wire and the gate wire, and a semiconductor light-emitting diode electrically connected to the thin film transistors. A pair of residual assembly electrodes overlapping the semiconductor light-emitting diode are also provided.
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公开(公告)号:US20180309017A1
公开(公告)日:2018-10-25
申请号:US15959974
申请日:2018-04-23
Applicant: LG ELECTRONICS INC.
Inventor: Wonseok CHOI , Gunho KIM
IPC: H01L31/18 , H01L31/068 , H01L31/0735 , H01L31/0687 , H01L31/0304
CPC classification number: H01L31/1844 , H01L31/03042 , H01L31/03046 , H01L31/068 , H01L31/0687 , H01L31/0693 , H01L31/0725 , H01L31/0735 , Y02E10/544 , Y02P70/521
Abstract: Disclosed is a method of manufacturing a compound semiconductor solar cell according to an embodiment of the invention. The method of manufacturing the compound semiconductor solar cell according to the embodiment of the invention includes forming a plurality of compound semiconductor layers of at least two elements and including a base layer and an emitter layer, the base layer including a first conductivity type dopant to have a first conductivity type and the emitter layer including a second conductivity type dopant to have a second conductivity type. The forming of the plurality of compound semiconductor layers includes at least one of a process-temperature change period and a growth-rate change period.
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公开(公告)号:US20180248059A1
公开(公告)日:2018-08-30
申请号:US15904019
申请日:2018-02-23
Applicant: LG ELECTRONICS INC.
Inventor: Soohyun KIM , Gunho KIM , Hyun LEE , Wonseok CHOI , Younho HEO
IPC: H01L31/0352 , H01L31/0224 , H01L31/18 , H01L31/0735
CPC classification number: H01L31/035281 , H01L31/022425 , H01L31/0735 , H01L31/184 , H01L31/1844 , H01L31/186 , H01L31/1892 , Y02E10/544 , Y02P70/521
Abstract: A compound semiconductor solar cell and a method of manufacturing the same are disclosed. The compound semiconductor solar cell includes a compound semiconductor layer, a front electrode positioned on a front surface of the compound semiconductor layer, a back electrode positioned on a back surface of the compound semiconductor layer, a defect portion disposed within the compound semiconductor layer and physically and electrically connected to the back electrode, and an isolation portion surrounding the defect portion.
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公开(公告)号:US20250015057A1
公开(公告)日:2025-01-09
申请号:US18588902
申请日:2024-02-27
Applicant: LG ELECTRONICS INC.
Inventor: Byoungkwon CHO , Hyeyoung YANG , Wonseok CHOI
IPC: H01L25/075 , H01L33/46 , H01L33/62
Abstract: A semiconductor light emitting device includes a light emitting layer, a first electrode on a lower side of the light emitting layer, a second electrode on an upper side of the light emitting layer, an insulating layer on a side portion of the light emitting layer and overlapping at least a portion of the first electrode and overlapping at least a portion of the second electrode and a plurality of metal layers spaced apart from each other in the insulating layer, the plurality of metal layers including a first metal layer including a reflective layer and a second metal layer including a magnetic layer.
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公开(公告)号:US20240372041A1
公开(公告)日:2024-11-07
申请号:US18685024
申请日:2021-08-20
Applicant: LG ELECTRONICS INC.
Inventor: Byoungkwon CHO , Jaehyuk LEE , Wonseok CHOI , Chilkeun PARK
IPC: H01L33/42 , H01L25/075 , H01L33/54 , H01L33/62
Abstract: A lens driving device according to an embodiment includes a substrate, a first frame including a lens and disposed on the substrate, a second frame on which the first frame is placed and a third frame on which the second frame is disposed. The first frame may move in a Z-axis direction, the second frame may tilt in X-axis and Y-axis directions and rotate around the Z axis, and the third frame may include a stopper structure to limit tilting and rotation of the second frame.
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公开(公告)号:US20240322084A1
公开(公告)日:2024-09-26
申请号:US18573895
申请日:2021-07-05
Applicant: LG ELECTRONICS INC.
Inventor: Jinsung KIM , Wonjae CHANG , Wonseok CHOI
CPC classification number: H01L33/44 , H01L25/167
Abstract: A semiconductor light emitting device includes a light emitting structure having a first region and a second region along a major axis direction, an insulating layer surrounding a side surface of the first region, and a first electrode surrounding a side surface of the second region. The thickness of the insulating layer is the same as the thickness of the first electrode. Therefore, when implementing a display, lighting defects can be prevented and luminance deviation can be eliminated, thereby improving image quality.
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29.
公开(公告)号:US20240038825A1
公开(公告)日:2024-02-01
申请号:US18227788
申请日:2023-07-28
Applicant: LG ELECTRONICS INC.
Inventor: Byoungkwon CHO , Wonseok CHOI , Jeonghyo KWON , Sungmin PARK
CPC classification number: H01L27/156 , G09G3/32 , H01L33/24 , H01L33/44 , H01L33/405 , G09G2300/0842
Abstract: The embodiment relates to a semiconductor light emitting device for a display pixel and a display device including the same. A semiconductor light emitting device for a display pixel according to an embodiment can include a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer and an active layer disposed therebetween, a passivation layer disposed on the light emitting structure, and a second electrode layer disposed under the light emitting structure. The light emitting structure may include a rounding semiconductor layer in which an upper surface thereof is partially rounded.
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公开(公告)号:US20230401993A1
公开(公告)日:2023-12-14
申请号:US18028257
申请日:2020-09-25
Applicant: LG ELECTRONICS INC.
Inventor: Wonseok CHOI , Sungmin PARK , Soohyun KIM
CPC classification number: G09G3/32 , G09G3/2092 , G09G2320/0626 , G09G2310/0278 , H01L33/0004
Abstract: The present invention is applicable to a display device-related technical field, and relates to, for example, a flat lighting device and a display device using a light-emitting diode (LED). The present invention relates to a display device including a plurality of individual unit compartment regions, comprising: at least one light-emitting diode provided in the individual unit compartment regions; a gate-on voltage line connected to the light-emitting diode; a scan line for applying a common voltage to the plurality of individual unit compartment regions; a data line for applying individual switching voltages to the plurality of individual unit compartment regions; a driving unit including a driving MOSFET device connected to the light-emitting diode; and a switching unit including a switching MOSFET device connected to the scan line and the data line to perform a switching operation.
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