Reduced crosstalk photonic switch
    23.
    发明授权

    公开(公告)号:US10244297B1

    公开(公告)日:2019-03-26

    申请号:US15920769

    申请日:2018-03-14

    Abstract: Described are various configurations of reduced crosstalk optical switches. Various embodiments can reduce or entirely eliminate crosstalk using a coupler that has a power-splitting ratio that compensates for amplitude imbalance caused by phase modulator attenuation. Some embodiments implement a plurality of phase modulators and couplers as part of a dilated switch network to increase overall bandwidth and further reduce potential for crosstalk.

    OPTICAL COUPLER INCLUDING A FARADAY ROTATOR LAYER AND AT LEAST ONE GRATING COUPLER

    公开(公告)号:US20210373257A1

    公开(公告)日:2021-12-02

    申请号:US17400705

    申请日:2021-08-12

    Abstract: An optical coupling device can couple incident light from a fiber into waveguides, but can reduce the coupling of return light from the waveguides into the fiber. A Faraday rotator layer can rotate by forty-five degrees, with a first handedness, respective planes of polarization of incident beams, and can rotate by forty-five degrees, with a second handedness opposite the first handedness, respective planes of polarization of return beams. A redirection layer can include at least one grating coupler that can redirect an incident beam of one polarization so that the redirected path extends within the redirection layer toward a first waveguide, and can redirect an incident beam of an opposite polarization so that the redirected path extends within the redirection layer toward a second waveguide. An optional birefringent layer can spatially separate incident beam having different polarizations, so that two single-polarization grating couplers can be used.

    INTEGRATED OPTOELECTRONIC DEVICE WITH HEATER
    28.
    发明申请

    公开(公告)号:US20200333641A1

    公开(公告)日:2020-10-22

    申请号:US16919802

    申请日:2020-07-02

    Abstract: Disclosed are structures as well as methods of manufacture and operation of integrated optoelectronic devices that facilitate directly heating the diode or waveguide structures to regulate a temperature of the device while allowing electrical contacts to be placed close to the device to reduce the electrical resistance. Embodiments include, in particular, heterogeneous electro-absorption modulators that include a compound-semiconductor diode structure placed above a waveguide formed in the device layer of an SOI substrate.

    INTEGRATED OPTOELECTRONIC DEVICE WITH HEATER
    29.
    发明申请

    公开(公告)号:US20200209655A1

    公开(公告)日:2020-07-02

    申请号:US16235197

    申请日:2018-12-28

    Abstract: Disclosed are structures as well as methods of manufacture and operation of integrated optoelectronic devices that facilitate directly heating the diode or waveguide structures to regulate a temperature of the device while allowing electrical contacts to be placed close to the device to reduce the electrical resistance. Embodiments include, in particular, heterogeneous electro-absorption modulators that include a compound-semiconductor diode structure placed above a waveguide formed in the device layer of an SOI substrate.

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