Abstract:
The present invention relates to the calibration and alignment of an X-ray reflectometry (“XRR”) system for measuring thin films. An aspect of the present invention describes a method for accurately determining C0 for each sample placement and for finding the incident X-ray intensity corresponding to each pixel of a detector array and thus permitting an amplitude calibration of the reflectometer system. Another aspect of the present invention relates to a method for aligning an angle-resolved X-ray reflectometer that uses a focusing optic, which may preferably be a Johansson crystal. Another aspect of the present invention is to validate the focusing optic. Another aspect of the present invention relates to the alignment of the focusing optic with the X-ray source. Another aspect of the present invention concerns the correction of measurements errors caused by the tilt or slope of the sample. Yet another aspect of the present invention concerns the calibration of the vertical position of the sample.
Abstract:
A method and apparatus are disclosed for evaluating relatively small periodic structures formed on semiconductor samples. In this approach, a light source generates a probe beam which is directed to the sample. In one preferred embodiment, an incoherent light source is used. A lens is used to focus the probe beam on the sample in a manner so that rays within the probe beam create a spread of angles of incidence. The size of the probe beam spot on the sample is larger than the spacing between the features of the periodic structure so some of the light is scattered from the structure. A detector is provided for monitoring the reflected and scattered light. The detector includes multiple detector elements arranged so that multiple output signals are generated simultaneously and correspond to multiple angles of incidence. The output signals are supplied to a processor which analyzes the signals according to a scattering model which permits evaluation of the geometry of the periodic structure. In one embodiment, the sample is scanned with respect to the probe beam and output signals are generated as a function of position of the probe beam spot.
Abstract:
An ellipsometer, and a method of ellipsometry, for analyzing a sample using a broad range of wavelengths, includes a light source for generating a beam of polychromatic light having a range of wavelengths of light for interacting with the sample. A polarizer polarizes the light beam before the light beam interacts with the sample. A rotating compensator induces phase retardations of a polarization state of the light beam wherein the range of wavelengths and the compensator are selected such that at least a first phase retardation value is induced that is within a primary range of effective retardations of substantially 135.degree. to 225.degree., and at least a second phase retardation value is induced that is outside of the primary range. An analyzer interacts with the light beam after the light beam interacts with the sample. A detector measures the intensity of light after interacting with the analyzer as a function of compensator angle and of wavelength, preferably at all wavelengths simultaneously. A processor determines the polarization state of the beam as it impinges the analyzer from the light intensities measured by the detector.
Abstract:
An optical measurement system for evaluating a reference sample that has at least a partially known composition. The optical measurement system includes a reference ellipsometer and at least one non-contact optical measurement device. The reference ellipsometer includes a light generator, an analyzer and a detector. The light generator generates a beam of quasi-monochromatic light having a known wavelength and a known polarization for interacting with the reference sample. The beam is directed at a non-normal angle of incidence relative to the reference sample to interact with the reference sample. The analyzer creates interference between the S and P polarized components in the light beam after the light beam has interacted with reference sample. The detector measures the intensity of the light beam after it has passed through the analyzer. A processor determines the polarization state of the light beam entering the analyzer from the intensity measured by the detector, and determines an optical property of the reference sample based upon the determined polarization state, the known wavelength of light from the light generator and the composition of the reference sample. The processor also operates the optical measurement device to measure an optical parameter of the reference sample. The processor calibrates the optical measurement device by comparing the measured optical parameter from the optical measurement device to the determined optical property from the reference ellipsometer.
Abstract:
An optical inspection apparatus is disclosed for generating an ellipsometric output signal at a plurality of wavelengths, each signal being representative of an integration of measurements at a plurality of angles of incidence. A polarized, broad band light beam is focused through a lens onto a sample in a manner to create a spread of angles of incidence. The reflected beam is passed through a quarter-wave plate and a polarizer which creates interference effects between the two polarizations states in the beam. The beam is then passed through a filter which transmits two opposed radial quadrants of the beam and blocks light striking the remaining two quadrants. The beam is then focused and angularly dispersed as function of wavelength. Each element of a one dimensional photodetector array generates an output signal associated with a specific wavelength and represents an integration of the phase-sensitive ellipsometric parameter (.delta.) at a plurality of angles of incidence. A second, independent measurement is taken in order to isolate the signal of interest. In one embodiment, the azimuthal angle of the filter is rotated by ninety degrees. The output signals from the second measurement are subtracted from the corresponding output signals from the first measurement to obtain the phase-sensitive ellipsometric information at a plurality of wavelengths. The ellipsometric information is used to analyze the sample.
Abstract:
An approach for increasing the sensitivity of a high resolution measurement device 50 is disclosed. The device includes a laser 52 for generating a probe beam 54 which is tightly focused onto the surface of the sample 58. A detector 66 is provided for monitoring a parameter of the reflected probe beam. In accordance with the subject invention, a spatial filter is provided for reducing the amount of light energy reaching the detector that has been reflected from areas on the surface of the sample beyond the focused spot. The spatial filter includes a relay lens 68 and a blocking member 70 located in the focal plane of the lens. The blocking member 70 includes an aperture 72 dimensioned to block light reflected from the surface of the sample beyond a predetermined distance from the center of the focused spot. In this manner, greater sensitivity to sample characteristics within the highly focused spot is achieved.
Abstract:
An apparatus (20) for measuring the thickness of a thin film layer (32) on substrate (28) includes a probe beam of radiation (24) focused substantially normal to the surface of the sample using a high numerical aperture lens (30). The high numerical aperture lens (30) provides a large spread of angles of incidence of the rays within the incident focused beam. A detector (50) measures the intensity across the reflected probe beam as a function of the angle of incidence with respect to the surface of the substrate (28) of various rays within the focused incident probe beam. A processor (52) functions to derive the thickness of the thin film layer based on these angular dependent intensity measurements. This result is achieved by using the angular dependent intensity measurements to solve the layer thickness using variations of the Fresnel equations. The invention is particularly suitable for measuring thin films, such as oxide layers, on silicon semiconductor samples.
Abstract:
The subject invention discloses a method and apparatus for evaluating both the thickness and compositional variables in a layered or thin film sample. Two independent detection systems are provided for measuring thermal waves generated in a sample by a periodic, localized heating. One detection system is of the type that generates output signals that are primarily a function of the surface temperature of the sample. The other detection system generates signals that are primarily a function of the integral of the temperature beneath the sample surface. The two independent thermal wave measurements permit analysis of both thickness and compositional variables. An apparatus is disclosed wherein both detection systems can be implemented efficiently within one apparatus.
Abstract:
A method and apparatus is disclosed for detecting thermal waves. This system is based on the measurement of the change in reflectivity at the sample surface which is a function of the changing surface temperature. The apparatus includes a radiation probe beam that is directed on a portion of the area which is being periodically heated. A photodetector is aligned to sense the intensity changes in the reflected radiation probe beam which results from the periodic heating. These signals are processed to detect the presence of thermal waves.
Abstract:
Methods of obtaining dopant and damage depth profile information are disclosed using modulated optical reflectivity (MOR) measurements. In one aspect, the depth profile is constructed using information obtained from various measurements such as the junction depth, junction abruptness and dopant concentration. In another aspect, a full theoretical model is developed. Actual measurements are fed to the model. Using an iterative approach, the actual measurements are compared to theoretical measurements calculated from the model to determine the actual depth profile.