Piezoelectronic device with novel force amplification

    公开(公告)号:US10964881B2

    公开(公告)日:2021-03-30

    申请号:US15825171

    申请日:2017-11-29

    IPC分类号: H01L41/09

    摘要: A piezoelectronic device with novel force amplification includes a first electrode; a piezoelectric layer disposed on the first electrode; a second electrode disposed on the piezoelectric layer; an insulator disposed on the second electrode; a piezoresistive layer disposed on the insulator; a third electrode disposed on the insulator; a fourth electrode disposed on the insulator; a semi-rigid housing surrounding the layers and the electrodes; wherein the semi-rigid housing is in contact with the first, third, and fourth electrodes and the piezoresistive layer; wherein the semi-rigid housing includes a void. The third and fourth electrodes are on the same plane and separated from each other in the transverse direction by a distance.

    Piezoelectronic switch device for RF applications

    公开(公告)号:US09881759B2

    公开(公告)日:2018-01-30

    申请号:US14745521

    申请日:2015-06-22

    摘要: A piezoelectronic switch device for radio frequency (RF) applications includes a piezoelectric (PE) material layer and a piezoresistive (PR) material layer separated from one another by at least one electrode, wherein an electrical resistance of the PR material layer is dependent upon an applied voltage across the PE material layer by way of an applied pressure to the PR material layer by the PE material layer; and a conductive, high yield material (C-HYM) comprising a housing that surrounds the PE material layer, the PR material layer and the at least one electrode, the C-HYM configured to mechanically transmit a displacement of the PE material layer to the PR material layer such that applied voltage across the PE material layer causes an expansion thereof and an increase the applied pressure to the PR material layer, thereby causing a decrease in the electrical resistance of the PR material layer.

    Low voltage transistor and logic devices with multiple, stacked piezoelectronic layers
    25.
    发明授权
    Low voltage transistor and logic devices with multiple, stacked piezoelectronic layers 有权
    低压晶体管和具有多个堆叠压电层的逻辑器件

    公开(公告)号:US09590167B2

    公开(公告)日:2017-03-07

    申请号:US15248488

    申请日:2016-08-26

    摘要: A piezoelectronic transistor device includes a first piezoelectric (PE) layer, a second PE layer, and a piezoresistive (PR) layer arranged in a stacked configuration, wherein an electrical resistance of the PR layer is dependent upon an applied voltage across the first and second PE layers by an applied pressure to the PR layer by the first and second PE layers. A piezoelectronic logic device includes a first and second piezoelectric transistor (PET), wherein the first and second PE layers of the first PET have a smaller cross sectional area than those of the second PET, such that a voltage drop across the PE layers of the first PET creates a first pressure in the PR layer of the first PET that is smaller than a second pressure in the PR layer of the second PET created by the same voltage drop across the PE layers of the second PET.

    摘要翻译: 压电电子晶体管器件包括以堆叠配置布置的第一压电(PE)层,第二PE层和压阻(PR)层,其中PR层的电阻取决于施加的电压跨越第一和第二 PE层通过施加的压力由第一和第二PE层施加到PR层。 压电电子逻辑器件包括第一和第二压电晶体管(PET),其中第一PET的第一和第二PE层具有比第二PET的横截面积小的横截面面积,使得跨越第二PET层的PE层的电压降 第一PET在第一PET的PR层中产生小于由第二PET的PE层上的相同电压降产生的第二PET的PR层中的第二压力的第一压力。

    LOW VOLTAGE TRANSISTOR AND LOGIC DEVICES WITH MULTIPLE, STACKED PIEZOELECTRONIC LAYERS
    26.
    发明申请
    LOW VOLTAGE TRANSISTOR AND LOGIC DEVICES WITH MULTIPLE, STACKED PIEZOELECTRONIC LAYERS 有权
    低电压晶体管和具有多个堆叠的电子层的逻辑器件

    公开(公告)号:US20160359099A1

    公开(公告)日:2016-12-08

    申请号:US15248488

    申请日:2016-08-26

    摘要: A piezoelectronic transistor device includes a first piezoelectric (PE) layer, a second PE layer, and a piezoresistive (PR) layer arranged in a stacked configuration, wherein an electrical resistance of the PR layer is dependent upon an applied voltage across the first and second PE layers by an applied pressure to the PR layer by the first and second PE layers. A piezoelectronic logic device includes a first and second piezoelectric transistor (PET), wherein the first and second PE layers of the first PET have a smaller cross sectional area than those of the second PET, such that a voltage drop across the PE layers of the first PET creates a first pressure in the PR layer of the first PET that is smaller than a second pressure in the PR layer of the second PET created by the same voltage drop across the PE layers of the second PET.

    摘要翻译: 压电电子晶体管器件包括以堆叠配置布置的第一压电(PE)层,第二PE层和压阻(PR)层,其中PR层的电阻取决于施加的电压跨越第一和第二 PE层通过施加的压力由第一和第二PE层施加到PR层。 压电电子逻辑器件包括第一和第二压电晶体管(PET),其中第一PET的第一和第二PE层具有比第二PET的横截面积小的横截面面积,使得跨越第二PET层的PE层的电压降 第一PET在第一PET的PR层中产生小于由第二PET的PE层上的相同电压降产生的第二PET的PR层中的第二压力的第一压力。

    Piezoelectronic switch device for RF applications
    27.
    发明授权
    Piezoelectronic switch device for RF applications 有权
    用于射频应用的压电开关器件

    公开(公告)号:US09472368B2

    公开(公告)日:2016-10-18

    申请号:US14529380

    申请日:2014-10-31

    IPC分类号: H01L41/09 H01L25/00 H01H57/00

    摘要: A piezoelectronic switch device for radio frequency (RF) applications includes a piezoelectric (PE) material layer and a piezoresistive (PR) material layer separated from one another by at least one electrode, wherein an electrical resistance of the PR material layer is dependent upon an applied voltage across the PE material layer by way of an applied pressure to the PR material layer by the PE material layer; and a conductive, high yield material (C-HYM) comprising a housing that surrounds the PE material layer, the PR material layer and the at least one electrode, the C-HYM configured to mechanically transmit a displacement of the PE material layer to the PR material layer such that applied voltage across the PE material layer causes an expansion thereof and an increase the applied pressure to the PR material layer, thereby causing a decrease in the electrical resistance of the PR material layer.

    摘要翻译: 用于射频(RF)应用的压电开关装置包括通过至少一个电极彼此分离的压电(PE)材料层和压阻(PR)材料层,其中PR材料层的电阻取决于 通过PE材料层通过施加的压力施加到PE材料层上的施加电压到PR材料层; 以及包括围绕所述PE材料层,所述PR材料层和所述至少一个电极的壳体的导电高收率材料(C-HYM),所述C-HYM被配置为机械地将所述PE材料层的位移传递到所述PE材料层 PR材料层,使得施加在PE材料层上的电压导致其膨胀,并且增加施加到PR材料层的压力,从而导致PR材料层的电阻降低。

    Low voltage transistor and logic devices with multiple, stacked piezoelectronic layers
    28.
    发明授权
    Low voltage transistor and logic devices with multiple, stacked piezoelectronic layers 有权
    低压晶体管和具有多个堆叠压电层的逻辑器件

    公开(公告)号:US09466781B2

    公开(公告)日:2016-10-11

    申请号:US15131484

    申请日:2016-04-18

    摘要: A piezoelectronic transistor device includes a first piezoelectric (PE) layer, a second PE layer, and a piezoresistive (PR) layer arranged in a stacked configuration, wherein an electrical resistance of the PR layer is dependent upon an applied voltage across the first and second PE layers by an applied pressure to the PR layer by the first and second PE layers. A piezoelectronic logic device includes a first and second piezoelectric transistor (PET), wherein the first and second PE layers of the first PET have a smaller cross sectional area than those of the second PET, such that a voltage drop across the PE layers of the first PET creates a first pressure in the PR layer of the first PET that is smaller than a second pressure in the PR layer of the second PET created by the same voltage drop across the PE layers of the second PET.

    摘要翻译: 压电电子晶体管器件包括以堆叠配置布置的第一压电(PE)层,第二PE层和压阻(PR)层,其中PR层的电阻取决于施加的电压跨越第一和第二 PE层通过施加的压力由第一和第二PE层施加到PR层。 压电电子逻辑器件包括第一和第二压电晶体管(PET),其中第一PET的第一和第二PE层具有比第二PET的横截面积小的横截面面积,使得跨越第二PET层的PE层的电压降 第一PET在第一PET的PR层中产生小于由第二PET的PE层上的相同电压降产生的第二PET的PR层中的第二压力的第一压力。

    PIEZOELECTRONIC SWITCH DEVICE FOR RF APPLICATIONS

    公开(公告)号:US20160268083A1

    公开(公告)日:2016-09-15

    申请号:US15163821

    申请日:2016-05-25

    IPC分类号: H01H57/00

    摘要: A piezoelectronic switch device for radio frequency (RF) applications includes a piezoelectric (PE) material layer and a piezoresistive (PR) material layer separated from one another by at least one electrode, wherein an electrical resistance of the PR material layer is dependent upon an applied voltage across the PE material layer by way of an applied pressure to the PR material layer by the PE material layer; and a conductive, high yield material (C-HYM) comprising a housing that surrounds the PE material layer, the PR material layer and the at least one electrode, the C-HYM configured to mechanically transmit a displacement of the PE material layer to the PR material layer such that applied voltage across the PE material layer causes an expansion thereof and an increase the applied pressure to the PR material layer, thereby causing a decrease in the electrical resistance of the PR material layer.

    PIEZOELECTRONIC SWITCH DEVICE FOR RF APPLICATIONS
    30.
    发明申请
    PIEZOELECTRONIC SWITCH DEVICE FOR RF APPLICATIONS 有权
    用于射频应用的压电开关装置

    公开(公告)号:US20160126044A1

    公开(公告)日:2016-05-05

    申请号:US14529380

    申请日:2014-10-31

    IPC分类号: H01H57/00

    摘要: A piezoelectronic switch device for radio frequency (RF) applications includes a piezoelectric (PE) material layer and a piezoresistive (PR) material layer separated from one another by at least one electrode, wherein an electrical resistance of the PR material layer is dependent upon an applied voltage across the PE material layer by way of an applied pressure to the PR material layer by the PE material layer; and a conductive, high yield material (C-HYM) comprising a housing that surrounds the PE material layer, the PR material layer and the at least one electrode, the C-HYM configured to mechanically transmit a displacement of the PE material layer to the PR material layer such that applied voltage across the PE material layer causes an expansion thereof and an increase the applied pressure to the PR material layer, thereby causing a decrease in the electrical resistance of the PR material layer.

    摘要翻译: 用于射频(RF)应用的压电开关装置包括通过至少一个电极彼此分离的压电(PE)材料层和压阻(PR)材料层,其中PR材料层的电阻取决于 通过PE材料层通过施加的压力施加到PE材料层上的施加电压到PR材料层; 以及包括围绕所述PE材料层,所述PR材料层和所述至少一个电极的壳体的导电高收率材料(C-HYM),所述C-HYM被配置为机械地将所述PE材料层的位移传递到所述PE材料层 PR材料层,使得施加在PE材料层上的电压导致其膨胀,并且增加施加到PR材料层的压力,从而导致PR材料层的电阻降低。