公开(公告)号：US20080055446A1

公开(公告)日：2008-03-06

申请号：US11700092

申请日：2007-01-31

Applicant: Gregory Michael Hunter ,  Robert H. Mullis ,  William R. Dirks ,  Dmitri Jerdev ,  Alexander Mokhnatyuk ,  Ilia Ovsiannikov

Inventor： Gregory Michael Hunter ,  Robert H. Mullis ,  William R. Dirks ,  Dmitri Jerdev ,  Alexander Mokhnatyuk ,  Ilia Ovsiannikov

IPC: H04N3/14 ,  H04N5/335

CPC classification number: H04N5/243 ,  H04N5/23245 ,  H04N5/3572 ,  H04N5/3651 ,  H04N9/045

Abstract: Surface generation and positional gain adjustment techniques for an imager are described. Embodiments of the techniques use zones having flexible boundaries which can be reconfigured depending upon the type of lens being used in a given application. Each pixel within each zone is multiplied by a correction factor dependent upon the particular zone while the pixel is being read out from the array. The correction factors comprise coefficients that are different for each color channel and in some instances different for each corner of each color channel.

公开(公告)号：US07612393B2

公开(公告)日：2009-11-03

申请号：US11653860

申请日：2007-01-17

Applicant: Dmitri Jerdev ,  Nail Khaliullin

Inventor： Dmitri Jerdev ,  Nail Khaliullin

IPC: H01L29/80

CPC classification number: H01L27/14679 ,  H01L31/1126

Abstract: An imager pixel has a photosensitive JFET structure having a channel region located above a buried charge accumulation region. The channel region has a resistance characteristic that changes depending on the level of accumulated charge in the accumulation region. During an integration period, incident light causes electrons to be accumulated inside the buried accumulation region. The resistance characteristic of the channel region changes in response to a field created by the charges accumulated in the accumulation region. Thus, when a voltage is applied to one side of the channel, the current read out from the other side is characteristic of the amount of stored charges.

Abstract translation: 成像器像素具有感光JFET结构，其具有位于掩埋电荷累积区上方的沟道区。 通道区域具有根据累积区域中的累积电荷的电平而变化的电阻特性。 在积分期间，入射光使得电子被积聚在掩埋积聚区域内。 沟道区域的电阻特性响应于由累积区域积累的电荷产生的场而发生变化。 因此，当向通道的一侧施加电压时，从另一侧读出的电流是存储电荷量的特征。

公开(公告)号：US07417677B2

公开(公告)日：2008-08-26

申请号：US10636534

申请日：2003-08-08

Applicant: Gennadiy A. Agranov ,  Dmitri Jerdev

Inventor： Gennadiy A. Agranov ,  Dmitri Jerdev

IPC: H04N5/335 ,  H04N5/217

CPC classification number: H04N5/3597 ,  H04N5/374

Abstract: A pixel cell with improved lag characteristics without increased noise. The pixel cell according to embodiments of the invention includes a photo-conversion device and a floating diffusion region switchably coupled to the photo-conversion device. The pixel cell includes a reset transistor, which has a first terminal electrically connected to the floating diffusion region and a second terminal switchably coupled to first and second voltage sources. The first voltage source is higher than the second voltage source. The pixel cell operates by returning a potential on the photo-conversion device to a value approximately equal to a value of a potential barrier between the photo-conversion device and the floating diffusion region prior to generating charge in the photo-conversion device.

Abstract translation: 具有改进的滞后特性而不增加噪声的像素单元。 根据本发明的实施例的像素单元包括光转换装置和可转换地耦合到光转换装置的浮动扩散区域。 像素单元包括复位晶体管，其具有电连接到浮动扩散区域的第一端子和可切换地耦合到第一和第二电压源的第二端子。 第一电压源高于第二电压源。 像素单元通过在光转换装置中产生电荷之前将光转换装置上的电位返回到大致等于光转换装置和浮动扩散区域之间的势垒的值的值来操作。

公开(公告)号：US20070133893A1

公开(公告)日：2007-06-14

申请号：US11302120

申请日：2005-12-14

Applicant: Dmitri Jerdev

Inventor： Dmitri Jerdev

IPC: G06K9/40

CPC classification number: G06T5/20 ,  G06T5/002 ,  G06T2207/10024 ,  H04N5/357 ,  H04N5/3675

Abstract: A method and apparatus that allows for image denoising in an imaging device. The method and implementing apparatus selects a kernel, which includes neighboring pixel pairs for a identified pixel, determines average output signal values for pixel pairs in the correction kernel, determines the difference in the average values and the identified pixel's value, compares the difference values to a threshold and incorporates selected average pixel pair values into the identified pixel's value for pixel pairs having difference values equal to or less than or equal to the threshold value.

Abstract translation: 允许在成像装置中进行图像去噪的方法和装置。 所述方法和实现装置选择包括所识别的像素的相邻像素对的核，确定校正内核中的像素对的平均输出信号值，确定平均值和识别的像素值之间的差异，将差值与 阈值，并且将所选择的平均像素对值并入具有等于或小于或等于阈值的差值的像素对的所识别的像素值中。

公开(公告)号：US20070114584A1

公开(公告)日：2007-05-24

申请号：US11649777

申请日：2007-01-05

Applicant: Dmitri Jerdev ,  Nail Khaliullin

Inventor： Dmitri Jerdev ,  Nail Khaliullin

IPC: H01L31/113 ,  H01L21/00

CPC classification number: H01L27/14679 ,  H01L31/1126

Abstract: An imager pixel has a photosensitive JFET structure having a channel region located above a buried charge accumulation region. The channel region has a resistance characteristic that changes depending on the level of accumulated charge in the accumulation region. During an integration period, incident light causes electrons to be accumulated inside the buried accumulation region. The resistance characteristic of the channel region changes in response to a field created by the charges accumulated in the accumulation region. Thus, when a voltage is applied to one side of the channel, the current read out from the other side is characteristic of the amount of stored charges.

Abstract translation: 成像器像素具有感光JFET结构，其具有位于掩埋电荷累积区上方的沟道区。 通道区域具有根据累积区域中的累积电荷的电平而变化的电阻特性。 在积分期间，入射光使得电子被积聚在掩埋积聚区域内。 沟道区域的电阻特性响应于由累积区域积累的电荷产生的场而发生变化。 因此，当向通道的一侧施加电压时，从另一侧读出的电流是存储电荷量的特征。

公开(公告)号：US08817135B2

公开(公告)日：2014-08-26

申请号：US13112182

申请日：2011-05-20

Applicant: Dmitri Jerdev

Inventor： Dmitri Jerdev

IPC: H04N5/217

CPC classification number: H04N5/367 ,  H04N2209/046

Abstract: A method and apparatus that allows for the correction of multiple defective pixels in an imager device. In one exemplary embodiment, the method includes the steps of selecting a correction kernel for a defective pixel, determining average and difference values for pixel pairs in the correction kernel, and substituting an average value from a pixel pair for the value of the defective pixel.

Abstract translation: 允许在成像器装置中校正多个缺陷像素的方法和装置。 在一个示例性实施例中，该方法包括以下步骤：为缺陷像素选择校正内核，确定校正内核中的像素对的平均值和差值，并将来自像素对的平均值替换为缺陷像素的值。

公开(公告)号：US07598132B2

公开(公告)日：2009-10-06

申请号：US11649777

申请日：2007-01-05

Applicant: Dmitri Jerdev ,  Nail Khaliullin

Inventor： Dmitri Jerdev ,  Nail Khaliullin

IPC: H01L21/337

CPC classification number: H01L27/14679 ,  H01L31/1126

Abstract: An imager pixel has a photosensitive JFET structure having a channel region located above a buried charge accumulation region. The channel region has a resistance characteristic that changes depending on the level of accumulated charge in the accumulation region. During an integration period, incident light causes electrons to be accumulated inside the buried accumulation region. The resistance characteristic of the channel region changes in response to a field created by the charges accumulated in the accumulation region. Thus, when a voltage is applied to one side of the channel, the current read out from the other side is characteristic of the amount of stored charges.

公开(公告)号：US20080055424A1

公开(公告)日：2008-03-06

申请号：US11513263

申请日：2006-08-31

Applicant: Dmitri Jerdev

Inventor： Dmitri Jerdev

IPC: H04N5/228

CPC classification number: H04N5/232 ,  G03B7/09979 ,  G03B13/36

Abstract: Methods, apparatuses and systems are disclosed for accelerating the operation of the automatic functions of an imager, e.g. a camera system. The automatic functions may, for example, include one or more of auto-focus, auto-exposure and auto-white balance. A special “windowing mode” is implemented in which information is acquired from only a subset of defined windows from the full pixel array area in order to set image capture parameters of the imager in accordance with current scene conditions

Abstract translation: 公开了用于加速成像器的自动功能的操作的方法，装置和系统，例如， 相机系统。 自动功能可以例如包括自动对焦，自动曝光和自动白平衡中的一个或多个。 实现了一种特殊的“开窗模式”，其中仅从全像素阵列区域的定义的窗口的子集获取信息，以便根据当前场景条件设置成像器的图像拍摄参数

公开(公告)号：US20060043520A1

公开(公告)日：2006-03-02

申请号：US10928314

申请日：2004-08-30

Applicant: Dmitri Jerdev ,  Nail Khaliullin

Inventor： Dmitri Jerdev ,  Nail Khaliullin

IPC: H01L21/00 ,  H01L31/062

CPC classification number: H01L27/14679 ,  H01L31/1126

Abstract: An imager pixel has a photosensitive JFET structure having a channel region located above a buried charge accumulation region. The channel region has a resistance characteristic that changes depending on the level of accumulated charge in the accumulation region. During an integration period, incident light causes electrons to be accumulated inside the buried accumulation region. The resistance characteristic of the channel region changes in response to a field created by the charges accumulated in the accumulation region. Thus, when a voltage is applied to one side of the channel, the current read out from the other side is characteristic of the amount of stored charges.

公开(公告)号：US20050237404A1

公开(公告)日：2005-10-27

申请号：US10832373

申请日：2004-04-27

Applicant: Dmitri Jerdev ,  Gennadiy Agranov

Inventor： Dmitri Jerdev ,  Gennadiy Agranov

IPC: H04N3/14 ,  H04N5/365 ,  H04N5/3745

CPC classification number: H04N5/365 ,  H04N5/374

Abstract: A pixel cell that utilizes a JFET transistor, instead of a CMOS transistor, linked to each pixel's photosensor as an anti-blooming and/or transfer transistor to provide an overflow path for electrons during charge integration. Using a JFET transistor reduces charge uncertainty and fixed pattern noise in the imaging system.

Abstract translation: 使用JFET晶体管而不是CMOS晶体管的像素单元，其连接到每个像素的光电传感器作为抗起霜和/或传输晶体管，以在电荷积分期间为电子提供溢出路径。 使用JFET晶体管可以降低成像系统中的电荷不确定度和固定模式噪声。