Invention Grant
- Patent Title: Lag cancellation in CMOS image sensors
- Patent Title (中): CMOS图像传感器的滞后消除
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Application No.: US10636534Application Date: 2003-08-08
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Publication No.: US07417677B2Publication Date: 2008-08-26
- Inventor: Gennadiy A. Agranov , Dmitri Jerdev
- Applicant: Gennadiy A. Agranov , Dmitri Jerdev
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H04N5/335
- IPC: H04N5/335 ; H04N5/217

Abstract:
A pixel cell with improved lag characteristics without increased noise. The pixel cell according to embodiments of the invention includes a photo-conversion device and a floating diffusion region switchably coupled to the photo-conversion device. The pixel cell includes a reset transistor, which has a first terminal electrically connected to the floating diffusion region and a second terminal switchably coupled to first and second voltage sources. The first voltage source is higher than the second voltage source. The pixel cell operates by returning a potential on the photo-conversion device to a value approximately equal to a value of a potential barrier between the photo-conversion device and the floating diffusion region prior to generating charge in the photo-conversion device.
Public/Granted literature
- US20050030402A1 Lag cancellation in CMOS image sensors Public/Granted day:2005-02-10
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