公开(公告)号：US11237472B2

公开(公告)日：2022-02-01

申请号：US16490010

申请日：2018-03-01

Applicant: HOYA CORPORATION

Inventor： Yohei Ikebe ,  Junichi Horikawa ,  Takahiro Onoue ,  Mizuki Kataoka

IPC: G03F1/24 ,  G03F1/54 ,  G03F7/20

Abstract: Provided are a reflective mask blank and a reflective mask, which are able to reduce the shadowing effects of EUV lithography and form a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film and an absorber film in that order on a substrate, and the absorber film comprises a material comprising an amorphous metal comprising at least one or more elements among cobalt (Co) and nickel (Ni).

公开(公告)号：US10578961B2

公开(公告)日：2020-03-03

申请号：US15676032

申请日：2017-08-14

Applicant: HOYA CORPORATION

Inventor： Yohei Ikebe ,  Masaru Tanabe

IPC: G03F1/60 ,  G03F1/22 ,  G03F1/24 ,  H01L21/033 ,  C03C17/36 ,  G03F7/20 ,  G03F1/66

Abstract: The object is to provide a mask blank substrate, a mask blank, and a transfer mask which can achieve easy correction of a wavefront by a wavefront correction function of an exposure apparatus. The further object is to provide methods for manufacturing them.A virtual surface shape, which is an optically effective flat reference surface shape defined by a Zernike polynomial, is determined, wherein the Zernike polynomial is composed of only terms in which the order of variables related to a radius is second or lower order and includes one or more terms in which the order of the variables related to a radius is second-order; and the mask blank substrate, in which difference data (PV value) between the maximum value and the minimum value of difference shape between a virtual surface shape and a composite surface shape obtained by composing respective surface shapes of two main surfaces is 25 nm or less, is selected.

公开(公告)号：US10481484B2

公开(公告)日：2019-11-19

申请号：US15829090

申请日：2017-12-01

Applicant: HOYA CORPORATION

Inventor： Yohei Ikebe ,  Takahiro Onoue ,  Tsutomu Shoki

IPC: G03F1/24 ,  G03F1/26 ,  G03F1/38 ,  G03F1/48 ,  G03F7/20 ,  C23C14/06 ,  C23C14/18

Abstract: A reflective mask blank that comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12. The protective film 14 is made of a material containing ruthenium as a main component, and an anti-diffusion layer 15 which is an oxidized layer containing ruthenium as a main component is formed on a surface of the protective film 14, or as a part of the protective film 14 on a side adjacent to the phase-shift layer 16, so as to inhibit counter diffusion in relation to the phase-shift film 16, thereby inhibiting the thermal diffusion between the protective film 14 and the material of the phase-shift film pattern. Also, a reflective mask and method of manufacture.

公开(公告)号：US09864267B2

公开(公告)日：2018-01-09

申请号：US15106919

申请日：2014-11-26

Applicant: HOYA CORPORATION

Inventor： Yohei Ikebe ,  Takahiro Onoue ,  Tsutomu Shoki

IPC: G03F1/24 ,  G03F1/26 ,  G03F1/48 ,  G03F1/38 ,  G03F7/20 ,  C23C14/06 ,  C23C14/18

CPC classification number: G03F1/24 ,  C23C14/0641 ,  C23C14/185 ,  G03F1/26 ,  G03F1/38 ,  G03F1/48 ,  G03F7/2004

Abstract: To provide a reflective mask blank which may inhibit a variation in reflectance with respect to EUV light due to counter diffusion between a protective film and a material of an adjacent phase-shift film pattern caused by thermal diffusion even if the power of an exposure light source of an EUV exposure machine becomes high; a reflective mask manufactured therefrom; and a method for manufacturing a semiconductor device. The reflective mask blank comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12. The protective film 14 is made of a material containing ruthenium as a main component, the phase-shift film 16 has a tantalum-based material layer comprising tantalum, and an anti-diffusion layer 15 comprising ruthenium and oxygen is formed on a surface of the protective film 14, or as a part of the protective film 14 on a side adjacent to the phase-shift layer 16, so as to inhibit counter diffusion in relation to the phase-shift film 16, thereby inhibiting the thermal diffusion between the protective film 14 and the material of the phase-shift film pattern.