Abstract:
A crystal analysis apparatus includes: a measurement data storage configured to store electron back-scattering pattern (EBSP) data measured at electron beam irradiation points on a plurality of cross-sections of a sample formed substantially in parallel at prescribed intervals; a crystal orientation database configured to accumulate therein information of crystal orientations corresponding to EBSPs; and a map constructing unit that constructs a three-dimensional crystal orientation map based on distribution of crystal orientations in normal directions of a plurality of faces of a polyhedral image having the cross-sections arranged at the prescribed intervals by reading out the crystal orientations in the normal directions of the faces from the crystal orientation database on the basis of the EBSP data stored in the measurement data storage.
Abstract:
A charged particle beam apparatus includes an electron beam column and an FIB column, in which an irradiation axis of the electron beam column and an irradiation axis of the FIB column are disposed to be perpendicular or substantially perpendicular to each other on a sample without interference. In addition, the first sample stage and a second sample stage are independently provided and moved to be tilted centering on an axial direction. The sample is moved by the first sample stage and a sample piece which is cut off from the sample is moved to be fixed to a tip end of a probe which is rotatable centering on the axial direction, thereby manufacturing the sample piece which reduces the influence of a curtaining effect.
Abstract:
Provided is a composite charged particle beam apparatus, including: an electron beam column for irradiating a sample with an electron beam; an ion beam column for irradiating the sample with an ion beam to perform etching processing; a sample stage drive portion for moving a sample stage in an irradiation axis direction of the electron beam; and a column adjusting portion for moving the ion beam column relatively to a sample chamber such that the sample is irradiated with the ion beam at a position irradiated with the electron beam.
Abstract:
A cross-section processing and observation method including: acquiring a surface image by scanning and irradiating a surface of a sample with ion beam; setting, on the surface image, a first sliced region and a second sliced region for performing the slice processing, the second sliced region being adjacent to the first sliced region and having a longitudinal length obtained by subtracting a slice width of the second sliced region from a longitudinal length of the first sliced region; forming a cross-section by irradiating the first sliced region and the second sliced region with the ion beam; and acquiring a cross-sectional image by irradiating the cross-section with electron beam.