公开(公告)号：US10658415B2

公开(公告)日：2020-05-19

申请号：US16315708

申请日：2017-07-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi Ishida ,  Noburo Hosokawa ,  Terumasa Nagano ,  Takashi Baba

IPC: H01L27/146 ,  H01L31/107 ,  H01L31/0224

Abstract: A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole. A first distance between an edge of the groove and an edge of the through-hole surrounded by the groove is longer than a second distance between the edge of the groove and an edge of the light receiving region adjacent to the through-hole surrounded by the groove.

公开(公告)号：US10141368B2

公开(公告)日：2018-11-27

申请号：US15561992

申请日：2016-03-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi Ishida ,  Noburo Hosokawa ,  Terumasa Nagano ,  Takashi Baba

IPC: H01L31/107 ,  H01L27/146 ,  H01L21/3205 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768 ,  H01L23/00 ,  H01L31/02 ,  H01L31/0216 ,  H01L23/48 ,  H01L31/0203 ,  H01L31/103

Abstract: In a plane including the center line of a vertical through hole, it is assumed that a segment that connects a first point corresponding to the edge of an opening of an insulating layer and a second point corresponding to the edge of a second opening is a first segment, a segment that connects the second point and a third point corresponding to an intersection point between the second opening and a surface of the insulating layer is a second segment, and a segment that connects the third point and the first point is a third segment. In the insulating layer, the first area located on one side with respect to the first segment is larger than the sum of the second area surrounded by the first, the second and the third segments and the third area located on the other side with respect to the third segment.

公开(公告)号：US20160141439A1

公开(公告)日：2016-05-19

申请号：US15002706

申请日：2016-01-21

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Terumasa Nagano ,  Noburo Hosokawa ,  Tomofumi Suzuki ,  Takashi Baba

IPC: H01L31/107 ,  H01L27/146 ,  H01L49/02 ,  H01L27/144 ,  H01L31/02

CPC classification number: H01L31/107 ,  G01J1/42 ,  G01T1/208 ,  H01L27/144 ,  H01L27/1443 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14663 ,  H01L28/20 ,  H01L31/02005 ,  H01L31/022408

Abstract: A semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in a semiconductor substrate, quenching resistors connected in series to the respective avalanche photodiodes and arranged on a first principal surface side of the semiconductor substrate, and a plurality of through-hole electrodes electrically connected to the quenching resistors and formed so as to penetrate the semiconductor substrate from the first principal surface side to a second principal surface side. A mounting substrate includes a plurality of electrodes arranged corresponding to the respective through-hole electrodes on a third principal surface side. The through-hole electrodes and the electrodes are electrically connected through bump electrodes, and a side surface of the semiconductor substrate and a side surface of a glass substrate are flush with each other.

Abstract translation: 半导体光检测元件包括以Geiger模式操作并形成在半导体衬底中的多个雪崩光电二极管，与各个雪崩光电二极管串联连接并设置在半导体衬底的第一主表面侧上的骤冷电阻器，以及多个通孔 电极连接到淬火电阻器并形成为从第一主表面侧穿过半导体衬底到第二主表面侧的电极。 安装基板包括在第三主表面侧对应于相应的通孔电极布置的多个电极。 通孔电极和电极通过凸块电极电连接，半导体衬底的侧表面和玻璃衬底的侧表面彼此齐平。