Abstract:
There is provided a semiconductor wafer suitable for the inspection of an operation state.A wafer is a semiconductor wafer having a plurality of chip forming regions, and includes a memory cell that is formed in each of the chip forming regions and an inspection device that is formed in each of the chip forming regions. The inspection device has a photodiode that receives an input of pump light for checking an operation of the memory cell and outputs an electrical signal corresponding to the pump light and a signal processing circuit that generates a logic signal based on the electrical signal output from the photodiode and outputs the logic signal to the memory cell.
Abstract:
A method of manufacturing an electron multiplier body, the method includes a step of preparing a first plate-like member having a surface and a back surface and a pair of second plate-like members, a step of forming, in the first plate-like member, a hole portion reaching from the front surface to the back surface, a step of constituting a laminated body by laminating the first and second plate-like members on each other so that the first plate-like member is interposed between the pair of second plate-like members to form a channel defined by the hole portion in the laminated body, a step of integrating the laminated body, a step of constituting a main body portion by cutting the integrated laminated body so that the channel is open, and a step of forming a resistive layer and a secondary electron multiplication layer on an inner surface of the channel.
Abstract:
An ion detector for detecting positive ions and negative ions, includes a housing provided with an ion entrance to make the positive ions and the negative ions enter, a conversion dynode which is disposed in the housing and to which a negative potential is applied, a scintillator which is disposed in the housing and has an electron incident surface which is opposed to the conversion dynode and into which secondary electrons emitted from the conversion dynode are made incident, a conductive layer which is formed on the electron incident surface and to which a positive potential is applied, and a photodetector which detects light emitted by the scintillator in response to incidence of the secondary electrons.
Abstract:
This invention concerns a photo-cathode for a vacuum system, wherein the photo-cathode is configured for receiving electromagnetic radiation having an incoming wavelength and for emitting electrons in response thereto. The photo-cathode comprises a conducting structure having a geometry, the geometry comprising a tip section. The tip section is adapted to provide field enhancement, β, when the conducting structure is illuminated with the electromagnetic radiation, wherein β is greater than about 102. The photo-cathode further comprising a substrate, the substrate being or comprising a dielectric substrate, the substrate supporting the conducting structure.
Abstract:
A brain measurement apparatus includes: a magnetoencephalograph including optically pumped magnetometers, magnetic sensors for measuring a static magnetic field at positions of the optically pumped magnetometers, and a nulling coil for canceling the static magnetic field; an MRI apparatus including a permanent magnet, a gradient magnetic field coil, a transmission coil, and a receive coil for detecting a nuclear magnetic resonance signal; and a control device that, when measuring the brain's magnetic field, controls a current to be supplied to the nulling coil based on measured values of the magnetic sensors and operates so as to cancel a static magnetic field at the position of each of the optically pumped magnetometers and, when measuring an MR image, controls the gradient magnetic field by controlling a current to be supplied to the gradient magnetic field coil and generates an MR image based on an output of the receive coil.
Abstract:
There is provided a semiconductor manufacturing method capable of coping with an increase in the density of an integrated circuit.A semiconductor manufacturing method according to one aspect of the present invention includes: a step of forming a memory cell, a photodiode that outputs an electrical signal corresponding to an input optical signal, and a signal processing circuit that generates a logic signal based on the electrical signal output from the photodiode and outputs the logic signal to the memory cell, so as to correspond to each chip forming region of a wafer having a plurality of chip forming regions; a step of inputting pump light for checking an operation of the memory cell to the photodiode and inspecting an operation state of the memory cell after the forming step; and a step of performing dicing for each of the chip forming regions after the inspection step.
Abstract:
There is provided a semiconductor wafer suitable for the inspection of an operation state.A wafer is a semiconductor wafer having a plurality of chip forming regions, and includes a memory cell that is formed in each of the chip forming regions and an inspection device that is formed outside each of the chip forming regions. The inspection device has a photodiode that receives an input of pump light for checking an operation of the memory cell and outputs an electrical signal corresponding to the pump light and a signal processing circuit that generates a logic signal based on the electrical signal output from the photodiode and outputs the logic signal to the memory cell.
Abstract:
A cell for a optically pumped magnetic sensor measures magnetic field by setting alkali metal atoms to a predetermined excitation state by a pump beam and detecting the excitation state by a probe beam. The cell is provided with a glass substrate which seals the alkali metal atoms and an enclosing gas and transmits the pump beam and the probe beam and a coating layer provided on an inner surface of the glass substrate. The coating layer is made of an inorganic material.
Abstract:
A method of manufacturing an electron multiplier body, the method includes a step of preparing a first plate-like member having a surface and a back surface and a pair of second plate-like members, a step of forming, in the first plate-like member, a hole portion reaching from the front surface to the back surface, a step of constituting a laminated body by laminating the first and second plate-like members on each other so that the first plate-like member is interposed between the pair of second plate-like members to form a channel defined by the hole portion in the laminated body, a step of integrating the laminated body, a step of constituting a main body portion by cutting the integrated laminated body so that the channel is open, and a step of forming a resistive layer and a secondary electron multiplication layer on an inner surface of the channel.
Abstract:
An electron multiplier body including a main body portion, an electron incidence portion, and a channel, in which the channel includes a first inner surface and a second inner surface facing each other, the first inner surface includes a convex first bent portion and a concave second bent portion, and a plurality of first inclined surfaces, the second inner surface includes a convex third bent portion and a concave fourth bent portion, and a plurality of second inclined surfaces, and an interval between a tip of the first bent portion and a tip of the third bent portion, a distance between the first inclined surface and the second inclined surfaces facing each other, an angle between a pair of first inclined surfaces defining the first bent portion, and a length of the channel satisfy predetermined expressions.