SEMICONDUCTOR WAFER
    21.
    发明申请
    SEMICONDUCTOR WAFER 审中-公开

    公开(公告)号:US20200174074A1

    公开(公告)日:2020-06-04

    申请号:US16631528

    申请日:2018-06-13

    Abstract: There is provided a semiconductor wafer suitable for the inspection of an operation state.A wafer is a semiconductor wafer having a plurality of chip forming regions, and includes a memory cell that is formed in each of the chip forming regions and an inspection device that is formed in each of the chip forming regions. The inspection device has a photodiode that receives an input of pump light for checking an operation of the memory cell and outputs an electrical signal corresponding to the pump light and a signal processing circuit that generates a logic signal based on the electrical signal output from the photodiode and outputs the logic signal to the memory cell.

    METHOD OF MANUFACTURING ELECTRON MULTIPLIER BODY, PHOTOMULTIPLIER TUBE, AND PHOTOMULTIPLIER
    22.
    发明申请
    METHOD OF MANUFACTURING ELECTRON MULTIPLIER BODY, PHOTOMULTIPLIER TUBE, AND PHOTOMULTIPLIER 有权
    制造电子乘法器体,光电管和照相机的方法

    公开(公告)号:US20160260592A1

    公开(公告)日:2016-09-08

    申请号:US15057144

    申请日:2016-03-01

    Abstract: A method of manufacturing an electron multiplier body, the method includes a step of preparing a first plate-like member having a surface and a back surface and a pair of second plate-like members, a step of forming, in the first plate-like member, a hole portion reaching from the front surface to the back surface, a step of constituting a laminated body by laminating the first and second plate-like members on each other so that the first plate-like member is interposed between the pair of second plate-like members to form a channel defined by the hole portion in the laminated body, a step of integrating the laminated body, a step of constituting a main body portion by cutting the integrated laminated body so that the channel is open, and a step of forming a resistive layer and a secondary electron multiplication layer on an inner surface of the channel.

    Abstract translation: 一种制造电子倍增器体的方法,该方法包括制备具有表面和背面的第一板状构件和一对第二板状构件的步骤,在第一板状构件 构件,从前表面到后表面的孔部分,通过将第一和第二板状构件彼此层压而构成层压体的步骤,使得第一板状构件插入在一对第二板状构件之间 板状构件以形成由层叠体中的孔部限定的通道,使层叠体一体化的步骤,通过切割一体的层叠体构成主体部的步骤,使得通道开放;以及台阶 在通道的内表面上形成电阻层和二次电子倍增层。

    ION DETECTOR
    23.
    发明申请
    ION DETECTOR 有权
    离子检测器

    公开(公告)号:US20130256539A1

    公开(公告)日:2013-10-03

    申请号:US13902084

    申请日:2013-05-24

    CPC classification number: G01T1/2006 G01T1/185 G01T1/28

    Abstract: An ion detector for detecting positive ions and negative ions, includes a housing provided with an ion entrance to make the positive ions and the negative ions enter, a conversion dynode which is disposed in the housing and to which a negative potential is applied, a scintillator which is disposed in the housing and has an electron incident surface which is opposed to the conversion dynode and into which secondary electrons emitted from the conversion dynode are made incident, a conductive layer which is formed on the electron incident surface and to which a positive potential is applied, and a photodetector which detects light emitted by the scintillator in response to incidence of the secondary electrons.

    Abstract translation: 用于检测正离子和负离子的离子检测器包括设置有离子入口以使正离子和负离子进入的壳体,设置在壳体中并且施加负电位的转换倍增电极,闪烁体 其设置在壳体中并且具有与转换倍增电极相对的电子入射表面,并且从转换倍增极发射的二次电子入射到其中;形成在电子入射表面上并且具有正电位的导电层 以及光电检测器,其响应于二次电子的入射而检测由闪烁体发射的光。

    PHOTO-CATHODE FOR A VACUUM SYSTEM
    24.
    发明申请

    公开(公告)号:US20220310349A1

    公开(公告)日:2022-09-29

    申请号:US17619711

    申请日:2020-06-19

    Abstract: This invention concerns a photo-cathode for a vacuum system, wherein the photo-cathode is configured for receiving electromagnetic radiation having an incoming wavelength and for emitting electrons in response thereto. The photo-cathode comprises a conducting structure having a geometry, the geometry comprising a tip section. The tip section is adapted to provide field enhancement, β, when the conducting structure is illuminated with the electromagnetic radiation, wherein β is greater than about 102. The photo-cathode further comprising a substrate, the substrate being or comprising a dielectric substrate, the substrate supporting the conducting structure.

    BRAIN MEASUREMENT APPARATUS AND BRAIN MEASUREMENT METHOD

    公开(公告)号:US20210389400A1

    公开(公告)日:2021-12-16

    申请号:US17346468

    申请日:2021-06-14

    Abstract: A brain measurement apparatus includes: a magnetoencephalograph including optically pumped magnetometers, magnetic sensors for measuring a static magnetic field at positions of the optically pumped magnetometers, and a nulling coil for canceling the static magnetic field; an MRI apparatus including a permanent magnet, a gradient magnetic field coil, a transmission coil, and a receive coil for detecting a nuclear magnetic resonance signal; and a control device that, when measuring the brain's magnetic field, controls a current to be supplied to the nulling coil based on measured values of the magnetic sensors and operates so as to cancel a static magnetic field at the position of each of the optically pumped magnetometers and, when measuring an MR image, controls the gradient magnetic field by controlling a current to be supplied to the gradient magnetic field coil and generates an MR image based on an output of the receive coil.

    SEMICONDUCTOR PRODUCTION METHOD AND WAFER INSPECTION METHOD

    公开(公告)号:US20200258794A1

    公开(公告)日:2020-08-13

    申请号:US16631520

    申请日:2018-06-13

    Abstract: There is provided a semiconductor manufacturing method capable of coping with an increase in the density of an integrated circuit.A semiconductor manufacturing method according to one aspect of the present invention includes: a step of forming a memory cell, a photodiode that outputs an electrical signal corresponding to an input optical signal, and a signal processing circuit that generates a logic signal based on the electrical signal output from the photodiode and outputs the logic signal to the memory cell, so as to correspond to each chip forming region of a wafer having a plurality of chip forming regions; a step of inputting pump light for checking an operation of the memory cell to the photodiode and inspecting an operation state of the memory cell after the forming step; and a step of performing dicing for each of the chip forming regions after the inspection step.

    SEMICONDUCTOR WAFER
    27.
    发明申请
    SEMICONDUCTOR WAFER 审中-公开

    公开(公告)号:US20200176339A1

    公开(公告)日:2020-06-04

    申请号:US16631507

    申请日:2018-06-13

    Abstract: There is provided a semiconductor wafer suitable for the inspection of an operation state.A wafer is a semiconductor wafer having a plurality of chip forming regions, and includes a memory cell that is formed in each of the chip forming regions and an inspection device that is formed outside each of the chip forming regions. The inspection device has a photodiode that receives an input of pump light for checking an operation of the memory cell and outputs an electrical signal corresponding to the pump light and a signal processing circuit that generates a logic signal based on the electrical signal output from the photodiode and outputs the logic signal to the memory cell.

    CELL FOR OPTICALLY PUMPED MAGNETIC SENSOR
    28.
    发明申请

    公开(公告)号:US20200064421A1

    公开(公告)日:2020-02-27

    申请号:US16547772

    申请日:2019-08-22

    Abstract: A cell for a optically pumped magnetic sensor measures magnetic field by setting alkali metal atoms to a predetermined excitation state by a pump beam and detecting the excitation state by a probe beam. The cell is provided with a glass substrate which seals the alkali metal atoms and an enclosing gas and transmits the pump beam and the probe beam and a coating layer provided on an inner surface of the glass substrate. The coating layer is made of an inorganic material.

    ELECTRON MULTIPLIER BODY, PHOTOMULTIPLIER TUBE, AND PHOTOMULTIPLIER
    30.
    发明申请
    ELECTRON MULTIPLIER BODY, PHOTOMULTIPLIER TUBE, AND PHOTOMULTIPLIER 有权
    电子多媒体机身,光电管和照相机

    公开(公告)号:US20160260593A1

    公开(公告)日:2016-09-08

    申请号:US15058199

    申请日:2016-03-02

    CPC classification number: H01J43/16 H01J43/24

    Abstract: An electron multiplier body including a main body portion, an electron incidence portion, and a channel, in which the channel includes a first inner surface and a second inner surface facing each other, the first inner surface includes a convex first bent portion and a concave second bent portion, and a plurality of first inclined surfaces, the second inner surface includes a convex third bent portion and a concave fourth bent portion, and a plurality of second inclined surfaces, and an interval between a tip of the first bent portion and a tip of the third bent portion, a distance between the first inclined surface and the second inclined surfaces facing each other, an angle between a pair of first inclined surfaces defining the first bent portion, and a length of the channel satisfy predetermined expressions.

    Abstract translation: 一种电子倍增器体,包括主体部分,电子入射部分和沟道,其中沟道包括彼此面对的第一内表面和第二内表面,第一内表面包括凸起的第一弯曲部分和凹部 第二弯曲部分和多个第一倾斜表面,所述第二内表面包括凸起的第三弯曲部分和凹入的第四弯曲部分,以及多个第二倾斜表面,并且所述第一弯曲部分的尖端和 所述第三弯曲部的前端,所述第一倾斜面与所述第二倾斜面之间的距离彼此相对,所述一对限定所述第一弯曲部的第一倾斜面与所述通道的长度之间的角度满足预定的表达。

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