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公开(公告)号：US20230057880A1
公开(公告)日：2023-02-23
申请号：US17902765
申请日：2022-09-02
Applicant: Google LLC
Inventor： Anthony Edward Megrant
Abstract: A device includes: a substrate including a superconductor quantum device, the superconductor quantum device including a superconductor material that exhibits superconducting properties at or below a corresponding critical temperature; a cap layer bonded to the substrate; and a sealed cavity between the cap layer and the substrate.
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公开(公告)号：US20230032766A1
公开(公告)日：2023-02-02
申请号：US16870372
申请日：2020-05-08
Applicant: Google LLC
Inventor： Charles Neill , Anthony Edward Megrant , Yu Chen
IPC: G06N10/00
Abstract: Methods, systems and apparatus for implementing a target two-qubit quantum logic gate on a first qubit and second qubit using a tunable qubit coupler. In one aspect, a method includes generating a control signal for the target two-qubit quantum logic gate according to a control model, wherein the control model comprises a controlled-Z operator and a swap operator that are non-orthogonal; and applying the control signal to the first qubit, second qubit and tunable qubit coupler.
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公开(公告)号：US20220384930A1
公开(公告)日：2022-12-01
申请号：US17878877
申请日：2022-08-01
Applicant: Google LLC
Inventor： Theodore Charles White , Anthony Edward Megrant
Abstract: A device includes: a substrate; a first superconductor layer on the substrate, the first superconductor layer having a first kinetic inductance; and a second superconductor layer on the first superconductor layer, the second superconductor layer having a second kinetic inductance that is lower than the first kinetic inductance, in which the second superconductor layer covers the first superconductor layer such that the second superconductor layer and the first superconductor layer have a same footprint, with the exception of at least a first region where the second superconductor layer is omitted so that the first superconductor layer and the second superconductor layer form a circuit element having a predetermined circuit parameter.
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公开(公告)号：US20220246677A1
公开(公告)日：2022-08-04
申请号：US17610241
申请日：2019-05-10
Applicant: Google LLC
Inventor： Julian Shaw Kelly , Anthony Edward Megrant , Rami Barends , Charles Neill , Daniel Thomas Sank , Evan Jeffrey , Amit Vainsencher , Paul Klimov , Christopher Michael Quintana
Abstract: A quantum computing device includes: a qubit; a single XYZ control line, in which the qubit and the single control line are configured and arranged such that, during operation of the quantum computing device, the single XYZ control line allows coupling of an XY qubit control flux bias, from the single XYZ control line to the qubit, over a first frequency range at a first predetermined effective coupling strength, and coupling of a Z qubit control flux bias, from the single XYZ control line to the qubit, over a second frequency range at a second predetermined effective coupling strength.
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公开(公告)号：US20210384402A1
公开(公告)日：2021-12-09
申请号：US17405448
申请日：2021-08-18
Applicant: Google LLC
Inventor： Anthony Edward Megrant
Abstract: A qubit coupling device includes: a dielectric substrate including a trench; a first superconductor layer on a surface of the dielectric substrate where an edge of the first superconductor layer extends along a first direction and at least a portion of the superconductor layer is in contact with the surface of the dielectric substrate, and where the superconductor layer is formed from a superconductor material exhibiting superconductor properties at or below a corresponding critical temperature; a length of the trench within the dielectric substrate is adjacent to and extends along an edge of the first superconductor layer in the first direction, and where the electric permittivity of the trench is less than the electric permittivity of the dielectric substrate.
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Patent Agency Ranking
公开(公告)号：US11127892B2
公开(公告)日：2021-09-21
申请号：US16473779
申请日：2017-12-15
Applicant: Google LLC
Inventor： Anthony Edward Megrant
IPC: H01L39/08 , G06N10/00 , H01L27/18 , H01L39/24 , H01L21/768
Abstract: A qubit coupling device includes: a dielectric substrate including a trench; a first superconductor layer on a surface of the dielectric substrate where an edge of the first superconductor layer extends along a first direction and at least a portion of the superconductor layer is in contact with the surface of the dielectric substrate, and where the superconductor layer is formed from a superconductor material exhibiting superconductor properties at or below a corresponding critical temperature; a length of the trench within the dielectric substrate is adjacent to and extends along an edge of the first superconductor layer in the first direction, and where the electric permittivity of the trench is less than the electric permittivity of the dielectric substrate.
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公开(公告)号：US12127484B2
公开(公告)日：2024-10-22
申请号：US17971292
申请日：2022-10-21
Applicant: Google LLC
Inventor： Charles Neill , Anthony Edward Megrant
CPC classification number: H10N60/805 , G06N10/00 , H10N60/12
Abstract: Methods, systems and apparatus for implementing a tunable qubit coupler. In one aspect, a device includes: a first data qubit, a second data qubit, and a third qubit that is a tunable qubit coupler arranged to couple to the first data qubit and to couple to the second data qubit such that, during operation of the device, the tunable qubit coupler allows tunable coupling between the first data qubit and the second data qubit.
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公开(公告)号：US11849652B2
公开(公告)日：2023-12-19
申请号：US17902765
申请日：2022-09-02
Applicant: Google LLC
Inventor： Anthony Edward Megrant
Abstract: A device includes: a substrate including a superconductor quantum device, the superconductor quantum device including a superconductor material that exhibits superconducting properties at or below a corresponding critical temperature; a cap layer bonded to the substrate; and a sealed cavity between the cap layer and the substrate.
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公开(公告)号：US20230225223A1
公开(公告)日：2023-07-13
申请号：US18117918
申请日：2023-03-06
Applicant: Google LLC
Inventor： Brian James Burkett , Ofer Naaman , Anthony Edward Megrant , Theodore Charles White
CPC classification number: H10N60/0912 , G06N10/00 , H10N60/12 , H10N60/805
Abstract: Methods, systems and apparatus for forming Josephson junctions with reduced stray inductance. In one aspect, a device includes a substrate; a first superconductor layer on the substrate; an insulator layer on the first superconductor layer; a second superconductor layer on the insulator layer, wherein the first superconductor layer, the insulator layer, and the second superconductor layer form a superconductor tunnel junction; and a third superconductor layer directly on a surface of the first superconductor layer and directly on a surface of the second superconductor layer to provide a first contact to the superconducting tunnel junction and a second contact to the superconductor tunnel junction, respectively.
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公开(公告)号：US11450938B2
公开(公告)日：2022-09-20
申请号：US16462263
申请日：2017-09-13
Applicant: Google LLC
Inventor： Theodore Charles White , Anthony Edward Megrant
Abstract: A device includes: a substrate; a first superconductor layer on the substrate, the first superconductor layer having a first kinetic inductance; and a second superconductor layer on the first superconductor layer, the second superconductor layer having a second kinetic inductance that is lower than the first kinetic inductance, in which the second superconductor layer covers the first superconductor layer such that the second superconductor layer and the first superconductor layer have a same footprint, with the exception of at least a first region where the second superconductor layer is omitted so that the first superconductor layer and the second superconductor layer form a circuit element having a predetermined circuit parameter.
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